(R) FQP7N65C/FQPF7N65C 650V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. * * * * * * 7A, 650V, RDS(on) = 1.4 @VGS = 10 V Low gate charge ( typical 28 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! G! G DS TO-220 TO-220F GD S FQP Series FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current FQP7N65C FQPF7N65C 650 - Continuous (TC = 100C) Units V 7 7* A 4.2 4.2 * A 28 * A IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 7 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) (Note 1) 1.6 4.5 -55 to +150 mJ V/ns W W/C C 300 C dv/dt PD TJ, TSTG TL - Pulsed (Note 1) 28 (Note 3) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 30 V 212 mJ 160 1.28 52 0.42 * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol RJC Parameter Thermal Resistance, Junction-to-Case RCS Thermal Resistance, Case-to-Sink Typ. 0.5 -- C/W RJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 C/W (c)2004 Fairchild Semiconductor Corporation FQP7N65C 0.78 FQPF7N65C 2.4 Units C/W Rev. A, May 2004 FQP7N65C/FQPF7N65C QFET Symbol TC = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units 650 -- -- V -- 0.8 -- V/C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25C IDSS IGSSF IGSSR VDS = 650 V, VGS = 0 V -- -- 1 A VDS = 520 V, TC = 125C -- -- 10 A Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.0 V -- 1.2 1.4 -- 8 -- S -- 955 1245 pF -- 100 130 pF -- 12 16 pF Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 3.5 A gFS Forward Transconductance VDS = 40 V, ID = 3.5 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 325 V, ID = 7A, RG = 25 (Note 4, 5) VDS = 520 V, ID = 7A, VGS = 10 V (Note 4, 5) -- 20 50 ns -- 50 110 ns -- 90 190 ns -- 55 120 ns -- 28 36 nC -- 4.5 -- nC -- 12 -- nC A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 7 ISM -- -- 28 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 7A Drain-Source Diode Forward Voltage -- -- 1.4 V trr Reverse Recovery Time -- 400 -- ns Qrr Reverse Recovery Charge -- 3.3 -- C VGS = 0 V, IS = 7A, dIF / dt = 100 A/s (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 8mH, IAS = 7A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 7A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2004 Fairchild Semiconductor Corporation Rev. A, May 2004 FQP7N65C/FQPF7N65C Electrical Characteristics FQP7N65C/FQPF7N65C Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V Bottom: 5.0 V Top : ID, Drain Current [A] 10 1 10 ID, Drain Current [A] 1 0 10 o 150 C o 0 10 -55 C o 25 C Notes : 1. 250s Pulse Test 2. TC = 25 Notes : 1. VDS = 40V 2. 250s Pulse Test -1 -1 10 0 10 1 10 2 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 1 IDR, Reverse Drain Current [A] RDS(ON) [ ], Drain-Source On-Resistance 3.0 2.5 VGS = 10V 2.0 1.5 VGS = 20V 10 0 10 150 25 Notes : 1. VGS = 0V 2. 250s Pulse Test Note : TJ = 25 1.0 -1 0 5 10 15 10 0.2 0.4 ID, Drain Current [A] 1600 Capacitances [pF] 1.0 1.2 1.4 1.6 1.8 2.0 Ciss 1200 Coss 800 Note ; 1. VGS = 0 V 2. f = 1 MHz Crss Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 12 VDS = 130V 10 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 400 0.8 VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 2000 0.6 VDS = 325V 8 VDS = 520V 6 4 2 Note : ID = 7A 0 -1 10 0 10 1 10 VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics (c)2004 Fairchild Semiconductor Corporation 0 0 4 8 12 16 20 24 28 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics Rev. A, May 2004 (Continued) 3.0 1.1 1.0 0.9 Notes : 1. VGS = 0 V 2. ID = 250 A -50 0 50 100 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 0.8 -100 150 2.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 3.5 A 0.5 0.0 -100 200 0 50 100 150 TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature Operation in This Area is Limited by R DS(on) Operation in This Area is Limited by R DS(on) 100 s 10 10 ID, Drain Current [A] 10 ms 100 ms DC 10 -1 10 10 s 1 1 ms 0 200 o 1 ID, Drain Current [A] -50 TJ, Junction Temperature [ C] o 100 s 1 ms 10 ms 0 10 DC -1 10 Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -2 10 FQP7N65C/FQPF7N65C Typical Characteristics -2 0 1 10 2 10 3 10 10 VDS, Drain-Source Voltage [V] 10 0 10 1 10 2 10 3 10 VDS, Drain-Source Voltage [V] Figure 9-1. Maximum Safe Operating Area for FQP7N65C Figure 9-2. Maximum Safe Operating Area for FQPF7N65C 8 ID, Drain Current [A] 6 4 2 0 25 50 75 100 125 150 TC, Case Temperature [] Figure 10. Maximum Drain Current vs Case Temperature (c)2004 Fairchild Semiconductor Corporation Rev. A, May 2004 10 FQP7N65C/FQPF7N65C Typical Characteristics (Continued) 0 Z JC(t), Thermal Response D = 0 .5 0 .2 10 -1 N o te s : 1 . Z J C (t) = 0 .7 8 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t) 0 .1 0 .0 5 PDM 0 .0 2 t1 0 .0 1 s in g le p u ls e 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u ra tio n [s e c ] Figure 11. Transient Thermal Response Curve for FQP7N65C Z JC(t), Thermal Response 10 D = 0 .5 0 0 .2 0 .1 10 0 .0 5 -1 N o te s : 1 . Z J C (t) = 2 .4 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t) 0 .0 2 0 .0 1 10 t1 s in g le p u ls e -2 10 PDM -5 10 -4 10 -3 10 -2 10 -1 10 t2 0 10 1 t 1 , S q u a r e W a v e P u ls e D u ra tio n [s e c ] Figure 11-2. Transient Thermal Response Curve for FQPF7N65C (c)2004 Fairchild Semiconductor Corporation Rev. A, May 2004 FQP7N65C/FQPF7N65C Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50K 200nF 12V Qg 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD DUT 10V tp (c)2004 Fairchild Semiconductor Corporation ID (t) VDS (t) VDD tp Time Rev. A, May 2004 FQP7N65C/FQPF7N65C Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop (c)2004 Fairchild Semiconductor Corporation Rev. A, May 2004 TO-220 4.50 0.20 2.80 0.10 (3.00) +0.10 1.30 -0.05 18.95MAX. (3.70) o3.60 0.10 15.90 0.20 1.30 0.10 (8.70) (1.46) 9.20 0.20 (1.70) 9.90 0.20 1.52 0.10 0.80 0.10 2.54TYP [2.54 0.20] 10.08 0.30 (1.00) 13.08 0.20 ) (45 1.27 0.10 +0.10 0.50 -0.05 2.40 0.20 2.54TYP [2.54 0.20] 10.00 0.20 Dimensions in Millimeters (c)2004 Fairchild Semiconductor Corporation Rev. A, May 2004 FQP7N65C/FQPF7N65C Package Dimensions (Continued) 3.30 0.10 TO-220F 10.16 0.20 2.54 0.20 o3.18 0.10 (7.00) (1.00x45) 15.87 0.20 15.80 0.20 6.68 0.20 (0.70) 0.80 0.10 ) 0 (3 9.75 0.30 MAX1.47 #1 +0.10 0.50 -0.05 2.54TYP [2.54 0.20] 2.76 0.20 2.54TYP [2.54 0.20] 9.40 0.20 4.70 0.20 0.35 0.10 Dimensions in Millimeters (c)2004 Fairchild Semiconductor Corporation Rev. A, May 2004 FQP7N65C/FQPF7N65C Package Dimensions TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM ActiveArrayTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. (c)2004 Fairchild Semiconductor Corporation Rev. I11