CREAT BY ART
- Low power loss, high efficiency
- Ideal for automated placement
- Guardring for overvoltage protection
- High surge current capability
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
V
RRM
V
V
RMS
V
V
DC
V
I
F(AV)
A
I
RRM
A
μA
mA
dV/dt V/μs
R
θJC O
C/W
T
JO
C
T
STG O
C
Document Number: DS_D1309058 Version: H13
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
10.5
Typical thermal resistance 3.5
Operating junction temperature range - 55 to +175
Storage temperature range - 55 to +175
Maximum reverse current @ rated VR T
J
=25 ℃
T
J
=125 ℃I
R
5
1
Voltage rate of change (Rated V
R
)10000
V
0.85 0.88
0.75 0.75
0.95 0.97
0.85 0.85
Peak repetitive reverse surge current (Note 1)
Maximum instantaneous forward voltage (Note 2)
I
F
= 5 A, T
J
=25℃
I
F
= 5 A, T
J
=125℃
I
F
= 10 A, T
J
=25℃
I
F
= 10 A, T
J
=125℃
V
F
Peak repetitive forward current
(Rated VR, Square wave, 20KHz) I
FRM
10 A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load I
FSM
120 A
Maximum DC blocking voltage 100 150 200
Maximum average forward rectified current 10
Maximum repetitive peak reverse voltage 100 150 200
Maximum RMS voltage 70 105 140
Polarity: As marked
Weight: 1.4 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25℃ unless otherwise noted)
PARAMETER SYMBOL MBRS
10H100CT
MBRS
10H150CT
MBRS
10H200CT Unit
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MECHANICAL DATA
Case: TO-263AB (D
2
PAK)
TO-263AB (D
2
PAK)
MBRS10H100CT thru MBRS10H200CT
Taiwan Semiconductor
Dual Common Cathode Schottk
y
Rectifier
FEATURES
- Moisture sensitivity level: level 1, per J-STD-020
PART NO.
PART NO.
MBRS10H100CT
MBRS10H100CT
MBRS10H100CT
(TA=25℃ unless otherwise noted)
Document Number: DS_D1309058 Version: H13
MBRS10H100CTHRN H RN AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
MBRS10H100CT RN RN
MBRS10H100CT RNG RN G Green compound
Note 1: "xx" defines voltage from 100V (MBRS10H100CT) to 200V (MBRS10H200CT)
EXAMPLE
PREFERRED P/N AEC-Q101
QUALIFIED PACKING CODE GREEN COMPOUND
CODE DESCRIPTION
MBRS10HxxxCT
(Note 1) Prefix "H" RN Suffix "G" D
2
PAK 800 / 13" Paper reel
C0 D
2
PAK 50 / Tube
MBRS10H100CT thru MBRS10H200CT
Taiwan Semiconductor
ORDERING INFORMATION
AEC-Q101
QUALIFIED
PACKING COD E GREEN COMPOUND
CODE
PACKAGE PACKING
0
2
4
6
8
10
12
50 60 70 80 90 100 110 120 130 140 150 160 170 180
AVERAGE FORWARD A
CURRENT (A)
CASE TEMPERATURE (oC)
FIG.1 FORWARD CURRENT DERATING CURVE
RESISTIVE OR
INDUCTIVELOAD
0
30
60
90
120
150
180
1 10 100
PEAK FORWARD SURGE CURRENT (A)
NUMBER OF CYCLES AT 60 Hz
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT
8.3ms Single Half Sine Wave
JEDEC Method
0.0001
0.001
0.01
0.1
1
10
0 20 40 60 80 100 120 140
INSTANTANEOUS REVERSE A
CURRENT (mA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
TJ=75℃
TJ=125℃
TJ=25℃
0.1
1
10
100
0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
INSTANTANEOUS FORWARD A
CURRENT (A)
FORWARD VOLTAGE (V)
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
PULSE WIDTH=300μs
1% DUTY CYCLE
TJ=125℃
TJ=25℃
Min Max Min Max
A-10.5 - 0.413
B 14.60 15.88 0.575 0.625
C 2.41 2.67 0.095 0.105
D 0.68 0.94 0.027 0.037
E 2.29 2.79 0.090 0.110
F 4.44 4.70 0.175 0.185
G 1.14 1.40 0.045 0.055
H 1.14 1.40 0.045 0.055
I 8.25 9.25 0.325 0.364
J 0.36 0.53 0.014 0.021
K 2.03 2.79 0.080 0.110
P/N = Specific Device Code
G = Green Compound
YWW = Date Code
F = Factory Code
Document Number: DS_D1309058 Version: H13
F9.5
G2.5
MARKING DIAGRAM
C1.1
D3.5
E 16.9
SUGG ESTED PAD LAY OUT
Symbol Unit (mm)
A 10.8
B8.3
Unit (inch)
0.425
MBRS10H100CT thru MBRS10H200CT
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DIM. Unit (mm) Unit (inch)
0.327
0.043
0.138
0.665
0.374
0.098
100
200
300
400
500
600
700
800
900
1000
0.1 1 10 100
JUNCTION CAPACITANCE (pF) A
REVERSE VOLTAGE (V)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
f=1.0MHz
Vsig=50mVp-p
0.1
1
10
100
0.01 0.1 1 10 100
TRANSIENT THERMAL
IMPEDANCE(℃/W)
T-PULSE DURATION(s)
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
CREAT BY ART
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1309058 Version: H13
MBRS10H100CT thru MBRS10H200CT
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
Mouser Electronics
Authorized Distributor
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MBRS10H100CT MBRS10H150CT MBRS10H200CT MBRS10H100CT RNG MBRS10H100CTHRN
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RNG MBRS10H200CTHRN MBRS10H200CTHRNG
