Preliminary Datasheet BB504C R07DS0285EJ0700 (Previous: REJ03G0836-0600) Rev.7.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier Features * * * * Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.0 dB typ. at f = 200 MHz, NF =1.75 dB typ. at f =900 MHz High gain; PG = 30 dB typ. at f = 200 MHz, PG = 22 dB typ. at f = 900 MHz Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. * Provide mini mold packages; CMPAK-4 (SOT-343mod) Outline RENESAS Package code: PTSP0004ZA-A (Package name: CMPAK-4) 2 3 1 4 Notes: 1. Source 2. Gate1 3. Gate2 4. Drain 1. Marking is "DS-". 2. BB504C is individual type number of RENESAS BBFET. Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate1 to source voltage Symbol VDS VG1S Ratings 6 Unit V +6 -0 V Gate2 to source voltage VG2S V Drain current Channel power dissipation Channel temperature Storage temperature ID Pch Tch Tstg +6 -0 30 100 150 -55 to +150 R07DS0285EJ0700 Rev.7.00 Mar 28, 2011 mA mW C C Page 1 of 9 BB504C Preliminary Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Gate1 to source cutoff current Gate2 to source cutoff current Gate1 to source cutoff voltage Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS IG1SS IG2SS VG1S(off) Min 6 +6 +6 -- -- 0.6 Typ -- -- -- -- -- 0.85 Max -- -- -- +100 +100 1.1 Unit V V V nA nA V VG2S(off) 0.6 0.85 1.1 V Drain current ID(op) 13 16 19 mA VDS = 5 V, VG1 = 5 V VG2S = 4 V, RG = 120 k Forward transfer admittance |yfs| 24 29 34 mS Input capacitance Output capacitance Reverse transfer capacitance Power gain (1) Ciss Coss Crss PG 1.7 1.0 -- 25 2.1 1.4 0.027 30 2.5 1.8 0.05 -- pF pF pF dB VDS = 5 V, VG1 = 5 V, VG2S = 4 V RG = 120 k, f = 1 kHz VDS = 5 V, VG1 = 5 V VG2S = 4 V, RG = 120 k f = 1 MHz Noise figure (1) NF -- 1.0 1.8 dB Power gain (2) Noise figure (2) PG NF 17 -- 22 1.75 -- 2.3 dB dB Gate2 to source cutoff voltage R07DS0285EJ0700 Rev.7.00 Mar 28, 2011 Test conditions ID = 200 A, VG1S = VG2S = 0 IG1 = +10 A, VG2S = VDS = 0 IG2 = +10 A, VG1S = VDS = 0 VG1S = +5 V, VG2S = VDS = 0 VG2S = +5 V, VG1S = VDS = 0 VDS = 5 V, VG2S = 4V ID = 100A VDS = 5 V, VG1S = 5 V ID = 100 A VDS = 5 V, VG1 = 5 V VG2S = 4 V, RG = 120 k f = 200 MHz VDS = 5 V, VG1 = 5 V VG2S =4 V, RG = 120 k f = 900 MHz Page 2 of 9 BB504C Preliminary Test Circuits * DC Biasing Circuit for Operating Characteristics Items (ID(op), |yfs|, Ciss, Coss, Crss, NF, PG) VG2 VG1 RG Gate 2 Gate 1 Drain Source A ID * 200MHz Power Gain, Noise Figure Test Circuit 1000p 1000p 47k VT VG2 VT 1000p 47k 1000p 47k BBFET Output(50) 1000p L2 Input(50) L1 10p max 1000p 1000p 36p 1SV70 RG RFC 120k 1SV70 1000p VD = VG1 Unit Resistance () Capacitance (F) L1 : 1mm Enameled Copper Wire,Inside dia 10mm, 2Turns L2 : 1mm Enameled Copper Wire,Inside dia 10mm, 2Turns RFC : 1mm Enameled Copper Wire,Inside dia 5mm, 2Turns R07DS0285EJ0700 Rev.7.00 Mar 28, 2011 Page 3 of 9 BB504C Preliminary * 900 MHz Power Gain, Noise Figure Test Circuit VD VG1 VG2 C6 C4 C5 R1 R2 C3 R3 RFC D G2 Output L3 L4 G1 Input S L1 L2 C1 C1, C2 C3 C4 to C6 R1 R2 R3 C2 : : : : : : Variable Capacitor (10pF MAX) Disk Capacitor (1000pF) Air Capacitor (1000pF) 120 k 47 k 4.7 k L2: L1: 10 3 3 8 10 26 (1mm Copper wire) Unit:mm 21 L4: L3: 18 10 10 7 7 29 RFC : 1mm Copper wire with enamel 4turns inside dia 6mm R07DS0285EJ0700 Rev.7.00 Mar 28, 2011 Page 4 of 9 BB504C Preliminary Typical Output Characteristics 20 50 0 50 100 150 Drain Current ID (mA) VDS = 5 V RG = 120 k 3V 2V VG2S = 1 V 1 2 3 4 5 8k 4 5 30 VDS = 5 V RG = 120 k f = 1 kHz 24 4V 3V 18 2V 12 6 VG2S = 1 V 0 1 2 3 4 5 Gate1 Voltage VG1 (V) Gate1 Voltage VG1 (V) Power Gain vs. Gate Resistance Noise Figure vs. Gate Resistance 40 4 Noise Figure NF (dB) 35 Power Gain PG (dB) 3 Forward Transfer Admittance vs. Gate1 Voltage 4 30 25 10 10 2 Drain Current vs. Gate1 Voltage 8 15 1 Drain to Source Voltage VDS (V) 12 20 4 Ambient Temperature Ta (C) 4V 0 k 0 18 0k 22 8 0 200 20 16 12 82 10 k 15 0 1 2 k 0 k 0 k 100 16 G = 6 150 VG2S = 4 V VG1 = VDS R Drain Current ID (mA) 200 Forward Transfer Admittance |yfs| (mS) Channel Power Dissipation Pch (mW) Maximum Channel Power Dissipation Curve VDS = 5 V VG1 = 5 V VG2S = 4 V f = 200 MHz 20 50 100 200 500 1000 Gate Resistance RG (k) R07DS0285EJ0700 Rev.7.00 Mar 28, 2011 3 VDS = 5 V VG1 = 5 V VG2S = 4 V f = 200MHz 2 1 0 10 20 50 100 200 500 1000 Gate Resistance RG (k) Page 5 of 9 BB504C Preliminary Noise Figure vs. Gate Resistance Power Gain vs. Gate Resistance 4 40 Noise Figure NF (dB) Power Gain PG (dB) 35 30 25 20 15 10 10 VDS = 5 V VG1 = 5 V VG2S = 4 V f = 900 MHz 20 50 100 200 VDS = 5V VG1 = 5 V VG2S = 4 V f = 900 MHz 3 2 1 0 10 500 1000 Gate Resistance RG (k) 500 1000 4 Input Capacitance Ciss (pF) Drain Current ID (mA) 100 200 Input Capacitance vs. Gate2 to Source Voltage 30 20 10 VDS = VG1 = 5 V VG2S = 4 V 0 10 20 50 500 1000 100 200 3 2 1 VDS = VG1 = 5 V RG = 120 k f = 1 MHz 0 2 0 1 3 4 Gate2 to Source Voltage VG2S (V) Gate Resistance RG (k) Gain Reduction vs. Gate2 to Source Voltage Gain Reduction vs. Gate2 to Source Voltage 0 Gain Reduction GR (dB) 0 Gain Reduction GR (dB) 50 Gate Resistance RG (k) Drain Current vs. Gate Resistance 10 20 30 VDS = VG1 = 5 V RG = 120 k f = 200MHz 40 50 20 10 20 30 50 4 3 2 1 Gate2 to Source Voltage VG2S (V) R07DS0285EJ0700 Rev.7.00 Mar 28, 2011 0 VDS = VG1 = 5 V RG = 120 k f = 900MHz 40 4 3 2 1 0 Gate2 to Source Voltage VG2S (V) Page 6 of 9 BB504C Preliminary S11 Parameter vs. Frequency .8 1 S21 Parameter vs. Frequency 90 1.5 .6 2 Scale: 1 / div. 60 120 .4 3 4 5 .2 30 150 10 .2 0 .4 .6 .8 1 1.5 2 3 45 10 180 0 -10 -5 -4 - .2 - .4 -30 -150 -3 -2 - .6 - .8 -1 Test Condition: VDS = 5 V , VG1 = 5 V VG2S = 4 V , RG = 120 k , Zo = 50 50 to 1000 MHz (50 MHz step) S22 Parameter vs. Frequency Scale: 0.004/ div. .8 60 120 -90 Test Condition: VDS = 5 V , VG1 = 5 V VG2S = 4 V , RG = 120 k , Zo = 50 50 to 1000 MHz (50 MHz step) S12 Parameter vs. Frequency 90 -60 -120 - 1.5 1 .6 1.5 2 .4 3 30 150 4 5 .2 10 180 0 .2 0 .4 .6 .8 1 1.5 2 3 45 10 -10 -30 -150 -5 -4 -.2 -3 -.4 -120 -60 -90 Test Condition: VDS = 5 V , VG1 = 5 V VG2S = 4 V , RG = 120 k , Zo = 50 50 to 1000 MHz (50 MHz step) R07DS0285EJ0700 Rev.7.00 Mar 28, 2011 -2 -.6 -.8 -1 -1.5 Test Condition: VDS = 5 V , VG1 = 5 V VG2S = 4 V , RG = 120 k , Zo = 50 50 to 1000 MHz (50 MHz step) Page 7 of 9 BB504C Preliminary S Parameter (VDS = VG1 = 5V, VG2S = 4V, RG = 120k, Zo = 50) S11 f(MHz) S21 S12 S22 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 MAG. 1.000 0.993 0.991 0.984 0.978 0.970 0.958 0.954 0.945 0.932 0.920 0.910 0.900 0.887 0.870 0.863 ANG. -3.3 -7.2 -10.9 -15.0 -19.0 -22.8 -26.7 -30.3 -33.8 -37.5 -40.6 -44.3 -47.5 -50.9 -54.4 -57.6 MAG. 2.80 2.78 2.77 2.74 2.72 2.68 2.64 2.60 2.56 2.50 2.46 2.41 2.37 2.31 2.27 2.22 ANG. 175.9 170.9 166.1 161.2 156.5 151.8 147.2 142.7 138.6 134.1 129.8 125.7 121.6 117.8 113.6 110.0 MAG. 0.00106 0.00171 0.00253 0.00356 0.00442 0.00485 0.00576 0.00642 0.00689 0.00712 0.00765 0.00804 0.00798 0.00787 0.00785 0.00758 ANG. 58.8 75.7 75.1 77.4 78.2 80.0 74.7 71.7 73.3 71.8 70.7 69.9 69.1 67.8 70.8 73.3 MAG. 0.990 0.992 0.991 0.987 0.985 0.982 0.978 0.973 0.968 0.963 0.958 0.952 0.947 0.942 0.936 0.929 ANG. -2.4 -4.7 -7.2 -9.6 -12.2 -14.7 -17.1 -19.6 -22.0 -24.2 -26.7 -28.9 -31.3 -33.4 -35.8 -37.9 850 900 950 1000 0.853 0.839 0.827 0.819 -60.9 -63.6 -66.5 -70.1 2.18 2.12 2.07 2.04 105.8 102.2 98.6 94.9 0.00721 0.00694 0.00716 0.00667 75.2 75.8 88.1 92.7 0.924 0.917 0.912 0.906 -40.3 -42.5 -44.5 -46.7 R07DS0285EJ0700 Rev.7.00 Mar 28, 2011 Page 8 of 9 BB504C Preliminary Package Dimensions Package Name CMPAK-4 JEITA Package Code SC-82AB RENESAS Code PTSP0004ZA-A D e2 Previous Code CMPAK-4(T) / CMPAK-4(T)V MASS[Typ.] 0.006g A e Q b1 c B B E HE LP L A A x M L1 Reference Symbol A3 b S A e2 A2 A l1 A1 y S b5 S b e e1 b1 l1 c c A-A Section b4 B-B Section Pattern of terminal position areas A A1 A2 A3 b b1 c D E e e2 HE L L1 LP x y b4 b5 e1 l1 Q Dimension in Millimeters Min 0.8 0 0.8 0.25 0.35 0.1 1.8 1.15 1.8 0.3 0.1 0.2 Nom 0.9 0.25 0.3 0.4 0.16 2.0 1.25 0.65 0.6 2.1 Max 1.1 0.1 1.0 0.4 0.5 0.26 2.2 1.35 2.4 0.7 0.5 0.6 0.05 0.05 0.45 0.55 1.5 0.9 0.2 Ordering Information Orderable Part Number BB504CDS-TL-E BB504CDS-TL-H Note: Quantity 3000 Shipping Container 178 mm Reel, 8 mm Emboss Taping For some grades, production may be terminated. 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