R07DS0285EJ0700 Rev.7.00 Page 1 of 9
Mar 28, 2011
Preliminary Datasheet
BB504C
Built in Biasing Circuit MOS FET IC
VHF&UHF RF Amplifier
Features
• Built in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise; NF = 1.0 dB typ. at f = 200 MHz, NF =1.75 dB typ. at f =900 MHz
• High gain; PG = 30 dB typ. at f = 200 MHz, PG = 22 dB typ. at f = 900 MHz
• Withstanding to ESD;
Built in ESD absorb ing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions.
• Provide mini mold packages; CMPAK-4 (SOT-343mod)
Outline
RENESAS Package code: PTSP0004ZA-A
(Package name:
CMPAK-4
)
1. Source
2. Gate1
3. Gate2
4. Drain
1
4
3
2
Notes: 1. Marking is “DS–”.
2. BB504C is individual type number of RENESAS BBFET.
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDS 6 V
Gate1 to source voltage VG1S +6
–0 V
Gate2 to source voltage VG2S +6
–0 V
Drain current ID 30 mA
Channel power dissipation Pch 100 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
R07DS0285EJ0700
(Previous: REJ03G0836-0600)
Rev.7.00
Mar 28, 2011
BB504C Preliminary
R07DS0285EJ0700 Rev.7.00 Page 2 of 9
Mar 28, 2011
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown voltage V(BR)DSS 6 — — V ID = 200 μA, VG1S = VG2S = 0
Gate1 to source breakdown voltage V(BR)G1SS +6 — — V IG1 = +10 μA, VG2S = VDS = 0
Gate2 to source breakdown voltage V(BR)G2SS +6 — — V IG2 = +10 μA, VG1S = VDS = 0
Gate1 to source cutoff current IG1SS — — +100 nA VG1S = +5 V, VG2S = VDS = 0
Gate2 to source cutoff current IG2SS — — +100 nA VG2S = +5 V, VG1S = VDS = 0
Gate1 to source cutoff voltage VG1S(off) 0.6 0.85 1.1 V VDS = 5 V, VG2S = 4V
ID = 100μA
Gate2 to source cutoff voltage VG2S(off) 0.6 0.85 1.1 V VDS = 5 V, VG1S = 5 V
ID = 100 μA
Drain current ID(op) 13 16 19 mA
VDS = 5 V, VG1 = 5 V
VG2S = 4 V, RG = 120 kΩ
Forward transfer admittance |yfs| 24 29 34 mS
VDS = 5 V, VG1 = 5 V, VG2S = 4 V
RG = 120 kΩ, f = 1 kHz
Input capacitance Ciss 1.7 2.1 2.5 pF
Output capacitance Coss 1.0 1.4 1.8 pF
Reverse transfer capacitance Crss — 0.027 0.05 pF
VDS = 5 V, VG1 = 5 V
VG2S = 4 V, RG = 120 kΩ
f = 1 MHz
Power gain (1) PG 25 30 — dB
Noise figure (1) NF — 1.0 1.8 dB VDS = 5 V, VG1 = 5 V
VG2S = 4 V, RG = 120 kΩ
f = 200 MHz
Power gain (2) PG 17 22 — dB
Noise figure (2) NF — 1.75 2.3 dB VDS = 5 V, VG1 = 5 V
VG2S =4 V, RG = 120 kΩ
f = 900 MHz
BB504C Preliminary
R07DS0285EJ0700 Rev.7.00 Page 3 of 9
Mar 28, 2011
Test Circuits
• DC Biasing Circuit for Operating Characteristic s Items (ID(op), |yfs|, Ciss, Coss, Crss, NF, PG)
Gate 1
Source
Drain
Gate 2
R
G
A
I
D
V
G2
V
G1
• 200MHz Power Gain, Noise Figure Test Circuit
V
G2
Input(50Ω)
1000p
36p
1000p
L1
V
D
= V
G1
R
G
BBFET
RFC
Output(50Ω)
L2
1000p
10p max
1000p
1000p
47k
1SV70
1000p
1000p
1000p 47k
47k
120k
V
T
V
T
Unit Resistance (Ω)
Capacitance (F)
1SV70
L1 : Φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
L2 : Φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
RFC : Φ1mm Enameled Copper Wire,Inside dia 5mm, 2Turns
BB504C Preliminary
R07DS0285EJ0700 Rev.7.00 Page 4 of 9
Mar 28, 2011
• 900 MHz Power Gain, Noise Figure Test Circuit
Input
Output
C2C1
L1 L2
L3 L4
S
G1
G2
R1 R2
C3 R3 RFC
C6
C5C4
D
V
G2
V
G1
V
D
C1, C2
C3
C4 to C6
R1
R2
R3
Variable Capacitor (10pF MAX)
Disk Capacitor (1000pF)
Air Capacitor (1000pF)
120 kΩ
47 kΩ
4.7 kΩ
:
:
:
:
:
:
26
3
3
L2:
18
10
10
L4:
29
7
7
L3:
(Φ1mm Copper wire)
Unit:mm
21
10
8
L1:
10
RFC : Φ1mm Copper wire with enamel 4turns inside dia 6mm
BB504C Preliminary
R07DS0285EJ0700 Rev.7.00 Page 5 of 9
Mar 28, 2011
200
150
100
50
050 100 150 200
20
16
12
8
4
012345
VDS = 5 V
RG = 120 kΩ
Channel Power Dissipation Pch (mW)
Ambient Temperature Ta (°C)
Maximum Channel Power
Dissipation Curve
Drain Current vs. Gate1 Voltage
Gate1 Voltage V
G1
(V)
Drain Current I
D
(mA)
4 V
V
G2S
= 1 V
3 V
2 V
012345
30
24
18
12
6
VDS = 5 V
RG = 120 kΩ
f = 1 kHz
Gate1 Voltage V
G1
(V)
Forward Transfer Admittance
vs. Gate1 Voltage
Forward Transfer Admittance |y
fs
| (mS)
4 V
2 V
3 V
V
G2S
= 1 V
012345
20
16
12
8
4
VG2S = 4 V
VG1 = VDS
Drain Current I
D
(mA)
Typical Output Characteristics
Drain to Source Voltage V
DS
(V)
R
G
= 68 kΩ
82 k Ω
150 k
Ω
120 k
Ω
100 k
Ω
180 k
Ω
220 k
Ω
Gate Resistance R
G
(kΩ)
0
4
3
2
1
VDS = 5 V
VG1 = 5 V
VG2S = 4 V
f = 200MHz
Noise Figure vs. Gate Resistance
Noise Figure NF (dB)
Gate Resistance R
G
(kΩ)
40
35
30
25
20
15
10
10 20 50 100 200 500 1000
VDS = 5 V
VG1 = 5 V
VG2S = 4 V
f = 200 MHz
Power Gain vs. Gate Resistance
Power Gain PG (dB)
10 20 50 100 200 500 1000
BB504C Preliminary
R07DS0285EJ0700 Rev.7.00 Page 6 of 9
Mar 28, 2011
0
4
3
2
1
V
DS
= 5V
V
G1
= 5 V
V
G2S
= 4 V
f = 900 MHz
Noise Figure vs. Gate Resistance
Noise Figure NF (dB)
Gate Resistance R
G
(kΩ)
40
35
30
25
20
15
10
V
DS
= 5 V
V
G1
= 5 V
V
G2S
= 4 V
f = 900 MHz
Power Gain vs. Gate Resistance
Gate Resistance R
G
(kΩ)
Power Gain PG (dB)
10 20 50 100 200 500 1000
10 20 50 100 200 500 1000
Gate Resistance R
G
(kΩ)
01234
4
3
2
1
0
V
DS
= VG1 = 5 V
R
G
= 120 kΩ
f = 1 MHz
Gate2 to Source Voltage V
G2S
(V)
Input Capacitance Ciss (pF)
Input Capacitance vs.
Gate2 to Source Voltage
4
0
10
20
30
40
50
3210
V
DS
= V
G1
= 5 V
R
G
= 120 kΩ
f = 200MHz
Gain Reduction GR (dB)
Gain Reduction vs.
Gate2 to Source Voltage
Gate2 to Source Voltage V
G2S
(V)
4
0
10
20
30
40
50
3210
Gain Reduction GR (dB)
Gain Reduction vs.
Gate2 to Source Voltage
Gate2 to Source Voltage V
G2S
(V)
Drain Current vs. Gate Resistance
Drain Current I
D
(mA)
30
20
10
0
10 20 50 100 200 500 1000
V
DS
= V
G1
= 5 V
R
G
= 120 kΩ
f = 900MHz
V
DS
= V
G1
= 5 V
V
G2S
= 4 V
BB504C Preliminary
R07DS0285EJ0700 Rev.7.00 Page 7 of 9
Mar 28, 2011
V
DS
= 5 V , V
G1
= 5 V
V
G2S
= 4 V , R
G
= 120 kΩ ,
Zo = 50Ω
V
DS
= 5 V , V
G1
= 5 V
V
G2S
= 4 V , R
G
= 120 kΩ ,
Zo = 50Ω
V
DS
= 5 V , V
G1
= 5 V
V
G2S
= 4 V , R
G
= 120 kΩ ,
Zo = 50Ω
V
DS
= 5 V , V
G1
= 5 V
V
G2S
= 4 V , R
G
= 120 kΩ ,
Zo = 50Ω
10
5
4
3
2
1.5
1
.8
- 2
- 3
- 4
- 5
-10
.6
.4
.2
0
- .2
- .4
- .6 - .8 - 1 - 1.5
.2 .4 .6 .8 12345
1.5 10
Scale: 1 / div.
0°
30°
60°
90°
120°
150°
180°
−150°
−90°
−60°
−30°
−120°
Scale: 0.004/ div.
0°
30°
60°
90°
120°
150°
180°
−150°
−90°
−60°
−30°
−120°
10
5
4
3
2
1.5
1
.8
−2
−3
−4
−5
−10
.6
.4
.2
0
−.2
−.4
−.6 −.8 −1
−1.5
.2 .4 .6 .8 12345
1.5 10
Test Condition:
50 to 1000 MHz (50 MHz step)
Test Condition:
50 to 1000 MHz (50 MHz step)
Test Condition:
50 to 1000 MHz (50 MHz step) 50 to 1000 MHz (50 MHz step)
S11 Parameter vs. Frequency S21 Parameter vs. Frequency
S12 Parameter vs. Frequency S22 Parameter vs. Frequency
Test Condition:
BB504C Preliminary
R07DS0285EJ0700 Rev.7.00 Page 8 of 9
Mar 28, 2011
S Parameter
(VDS = VG1 = 5V, VG2S = 4V, RG = 120kΩ, Zo = 50Ω)
S11 S21 S12 S22
f(MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.
50 1.000 -3.3 2.80 175.9 0.00106 58.8 0.990 -2.4
100 0.993 -7.2 2.78 170.9 0.00171 75.7 0.992 -4.7
150 0.991 -10.9 2.77 166.1 0.00253 75.1 0.991 -7.2
200 0.984 -15.0 2.74 161.2 0.00356 77.4 0.987 -9.6
250 0.978 -19.0 2.72 156.5 0.00442 78.2 0.985 -12.2
300 0.970 -22.8 2.68 151.8 0.00485 80.0 0.982 -14.7
350 0.958 -26.7 2.64 147.2 0.00576 74.7 0.978 -17.1
400 0.954 -30.3 2.60 142.7 0.00642 71.7 0.973 -19.6
450 0.945 -33.8 2.56 138.6 0.00689 73.3 0.968 -22.0
500 0.932 -37.5 2.50 134.1 0.00712 71.8 0.963 -24.2
550 0.920 -40.6 2.46 129.8 0.00765 70.7 0.958 -26.7
600 0.910 -44.3 2.41 125.7 0.00804 69.9 0.952 -28.9
650 0.900 -47.5 2.37 121.6 0.00798 69.1 0.947 -31.3
700 0.887 -50.9 2.31 117.8 0.00787 67.8 0.942 -33.4
750 0.870 -54.4 2.27 113.6 0.00785 70.8 0.936 -35.8
800 0.863 -57.6 2.22 110.0 0.00758 73.3 0.929 -37.9
850 0.853 -60.9 2.18 105.8 0.00721 75.2 0.924 -40.3
900 0.839 -63.6 2.12 102.2 0.00694 75.8 0.917 -42.5
950 0.827 -66.5 2.07 98.6 0.00716 88.1 0.912 -44.5
1000 0.819 -70.1 2.04 94.9 0.00667 92.7 0.906 -46.7
BB504C Preliminary
R07DS0285EJ0700 Rev.7.00 Page 9 of 9
Mar 28, 2011
Package Dimensions
AS
M
x
S
y
ee
2
b
1
A
EH
E
L
L
1
Q
c
D
BB
b
AA
b
1
c
B-B Section Pattern of terminal position areas
b
4
l
1
b
5
l
1
e
1
e
2
e
A
3
L
P
S
A
A
2
A
1
A
A
1
A
2
b
b
1
c
D
E
e
H
E
L
L
P
x
y
b
4
e
1
l
1
Q
0.8
0
0.8
0.25
0.1
1.8
1.15
1.8
0.3
0.2
0.3
0.25
0.9
0.16
2.0
1.25
0.65
2.1
1.5
0.2
1.1
0.1
1.0
0.4
0.35 0.4 0.5
0.26
2.2
1.35
2.4
0.7
L
1
0.10.5
0.6
0.05
0.05
0.45
0.9
Dimension in Millimeters
Reference
Symbol
MinNom Max
A
3
e
2
0.6
b
5
0.55
SC-82AB 0.006g
MASS[Typ.]
CMPAK-4(T) / CMPAK-4(T)V
PTSP0004ZA-A
RENESAS CodeJEITA Package Code Previous Code
b
A-A Section
c
Package Name
CMPAK-4
Ordering Information
Orderable Part Number Quantity Shipping Container
BB504CDS-TL-E
BB504CDS-TL-H 3000 φ 178 mm Reel, 8 mm Emboss Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
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