MPS3702 (suicon) MPS3703 PNP SILICON ANNULAR TRANSISTOR PNP SILICON AMPLIFIER . .. designed for use in low-current, large-signal amplifier applications. TRANSISTOR @ Device Similar Electrically to 2N3702, 2N3703 MAXIMUM RATINGS Rating Symbot }mps3702] MPS3703| Unit Coltector-Emitter Voltage Vceo 25 30 Vide Coltector-Base Voltage Ver 40 50 Vde Emitter-Base Voltage Ves 5.0 Vde Collector Current Continuous Ie 200 mAde Total Power Dissipation @ Ta = 25C Pp 350 mw Derate above 25C 28 mw? searins Total Power Dissipation @ Tc = 25C Po 1.0 Watt Derate above 25C ED) mw/Pc Operating and Storage Junction Ty.Tstg -55 to +150 c Temperature Range THERMAL CHARACTERISTICS Charecteristic Symbol Max Unit STYLE 1: Thermal Resistance, Junction to Ambient Royall) 357 ciw Pint 3 ineee Thermal Resistance, Junction to Case Rey 125 oom 3 COLLECTOR (1) Rosa is measured with the deviced soldered into a typical printed circuit board. ~ CASE 29-02 TO-82 896MPS3702, MPS3703 (continued) ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage) BVcro Vde fl, = 10 mAdc, Ip = 0) MPS3702 25 - MPS3703 30 - Collector-Base Breakdown Voltage BVcpo Vde Me = 100 pAdc, Ip = 0} MPS3702 40 - MPS3703 50 - Emitter-Base Breakdown Voltage BVEBO Vde (I, = 100 wAde, I, = 9) 5.0 - E Cc Collector Cutoff Current lcBo nAdc Von = 20 Vdc, Ie = 0) - 100 Emitter Cutoff Current Ippo nAde Vee =3 Vdc, Ig = 0) - 100 ON CHARACTERISTICS DC Current Gain?! hep - Mo = 50 mAdc, Vor = 5 Vdc) MPS3702 60 300 MPS3703 30 150 Collector-Emitter Saturation Voltage?) VoR(sat) Vde Ml, = 50 mAdc, Ip = 5 mAdc) - 0.25 Base-Emitter On Voltage (2) Vv Vdc (Ig = 50 mAdc, Vop = 5 Vde) BE(on) 0.6 1.0 DYNAMIC CHARACTERISTICS Current-Gain--Bandwidth Product fy MHz lo = 50 mAdc, Vor = 5 Vdc, { = 20 MHz) 100 - Output Capacitance Cop pF op = 10 Vde, f = 1 MHz) - 12 (2)'Pulse Test: Pulse Width = 300 us; Duty Cycle = 2% 897