APM9946JC-TUG - Anpec Electronics Corp.

Dual N-Channel Enhancement Mode MOSFET

Rev. A.3 - Mar., 2009 www.anpec.com.tw1

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and

advise customers to obtain the latest version of relevant information to verify before placing orders.

APM9946J

Features

Applications

Pin Description

Ordering and Marking Information

N-Channel MOSFET

•60V/6A,

RDS(ON) =38mΩ (Typ.) @ VGS = 10V

RDS(ON) =55mΩ (Typ.) @ VGS = 4.5V

•Super High Dense Cell Design

•Reliable and Rugged

•Lead Free and Green Devices Available

(RoHS Compliant)

•Power Management in DC/DC Converter,

DC/AC Inverter Systems

Top View of DIP−8

D1 D1

(8) (7)

(2)

(1)

(4)

(3)

(5)(6)

D2 D2

Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-

tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements

of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to

mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous

material and total of Br and Cl does not exceed 1500ppm by weight).

APM9946

Handling Code

Temperature Range

Package Code

J : DIP-8

Operating Junction Temperature Range

C : -55 to 150 oC

Handling Code

TU : Tube

Assembly Material

G : Halogen and Lead Free Device

APM9946 J : APM9946

XXXXX XXXXX - Date Code

Assembly Material

Rev. A.3 - Mar., 2009 www.anpec.com.tw2

APM9946J

Absolute Maximum Ratings (TA = 25°C unless otherwise noted)

Electrical Characteristics (TA = 25°C unless otherwise noted)

Symbol

Parameter Rating Unit

VDSS Drain-Source Voltage 60

VGSS Gate-Source Voltage ±20 V

ID* Continuous Drain Current 6

IDM* Pulsed Drain Current VGS=10V 20 A

IS* Diode Continuous Forward Current 3 A

TJ Maximum Junction Temperature 150

TSTG Storage Temperature Range -55 to 150 °C

TA=25°C 2.5

PD* Power Dissipation TA=100°C 1 W

RθJA* Thermal Resistance-Junction to Ambient 50 °C/W

Note : *Surface Mounted on 1in2 pad area, t ≤ 10 sec.

APM9946J

Symbol

Parameter Test Conditions Min.

Typ.

Max.

Unit

Static Characteristics

BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 60 - - V

VDS=48V, VGS=0V - - 1

IDSS Zero Gate Voltage Drain Current

TJ=85°C

- - 30 µA

VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 1 2 3 V

IGSS Gate Leakage Current VGS=±20V, VDS=0V - - ±100

VGS=10V, IDS=6A - 38 55

RDS(ON) a

Drain-Source On-state Resistance VGS=4.5V, IDS=4A - 55 77 mΩ

VSDa Diode Forward Voltage ISD=3A, VGS=0V - 0.8 1.1 V

Gate Charge Characteristics b

Qg Total Gate Charge - 19.1

Qgs Gate-Source Charge - 3.7 -

Qgd Gate-Drain Charge

VDS=30V, VGS=10V,

IDS=6A - 4.9 -

Rev. A.3 - Mar., 2009 www.anpec.com.tw3

APM9946J

Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)

APM9946J

Symbol

Parameter Test Conditions Min.

Typ.

Max.

Unit

Dynamic Characteristics b

RG Gate Resistance VGS=0V,VDS=0V,F=1MHz

- 1 - Ω

Ciss Input Capacitance - 950

Coss Output Capacitance - 70 -

Crss Reverse Transfer Capacitance

VGS=0V,

VDS=30V,

Frequency=1.0MHz - 50 - pF

td(ON) Turn-on Delay Time - 8 15

Tr Turn-on Rise Time - 7 14

td(OFF) Turn-off Delay Time - 25 46

Tf Turn-off Fall Time

VDD=30V, RL=30Ω,

IDS=1A, VGEN=10V,

RG=6Ω - 5 10

trr Reverse Recovery Time - 24 - ns

Qrr Reverse Recovery Charge ISD=6A, dISD/dt=100A/µs - 26 - nC

Note a : Pulse test ; pulse width ≤ 300µs, duty cycle ≤ 2%.

Note b : Guaranteed by design, not subject to production testing.

Rev. A.3 - Mar., 2009 www.anpec.com.tw4

APM9946J

Typical Operating Characteristics

ID - Drain Current (A)

Drain Current

Tj - Junction Temperature (°C)

Safe Operation Area

VDS - Drain - Source Voltage (V)

Thermal Transient Impedance

Square Wave Pulse Duration (sec)

Power Dissipation

Ptot - Power (W)

Tj - Junction Temperature (°C)

ID - Drain Current (A)

Normalized Transient Thermal Resistance

020 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

3.0

TA=25oC

020 40 60 80 100 120 140 160

TA=25oC,VG=10V

0.01 0.1 110 100 300

0.01

0.1

300µs

Rds(on) Limit

TA=25oC

10ms

100ms

1ms

1E-4 1E-3 0.01 0.1 110 30

1E-3

0.01

0.1

Mounted on 1in2 pad

RθJA : 50 oC/W

0.01

0.02

0.05

0.1

0.2

Single Pulse

Duty = 0.5

Rev. A.3 - Mar., 2009 www.anpec.com.tw5

APM9946J

RDS(ON) - On - Resistance (mΩ)

Drain-Source On Resistance

ID - Drain Current (A)

Tj - Junction Temperature (°C)

Gate Threshold Voltage

VDS - Drain-Source Voltage (V)

ID - Drain Current (A)

Output Characteristics

VGS - Gate - Source Voltage (V)

Normalized Threshold Voltage

Drain-Source On Resistance

RDS(ON) - On - Resistance (mΩ)

-50 -25 025 50 75 100 125 150

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8 IDS =250µA

0.0 0.5 1.0 1.5 2.0 2.5 3.0

3.5V

4.5V

VGS= 5,6,7,8,9,10V

04812 16 20

100

VGS= 4.5V

VGS=10V

2 3 4 5 6 7 8 9 10

ID=6A

Typical Operating Characteristics (Cont.)

Rev. A.3 - Mar., 2009 www.anpec.com.tw6

APM9946J

VDS - Drain - Source Voltage (V)

Drain-Source On Resistance

Normalized On Resistance

Tj - Junction Temperature (°C)

C - Capacitance (pF)

VSD - Source - Drain Voltage (V)

Source-Drain Diode Forward

IS - Source Current (A)

Capacitance Gate Charge

QG - Gate Charge (nC)

VGS - Gate - source Voltage (V)

-50 -25 025 50 75 100 125 150

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

RON@Tj=25oC: 38mΩ

VGS = 10V

IDS = 6A

0.0 0.3 0.6 0.9 1.2 1.5

0.1

Tj=25oC

Tj=150oC

0 5 10 15 20 25 30

200

400

600

800

1000

1200

1400

Frequency=1MHz

Crss Coss

Ciss

04812 16 20

10 VDS=30V

IDS= 6A

Typical Operating Characteristics (Cont.)

Rev. A.3 - Mar., 2009 www.anpec.com.tw7

APM9946J

Package Information

DIP-8

D1 eA

0.38

LMIN. MAX.

5.33

0.38

0.36 0.56

1.14 1.78

0.20 0.35

9.01 10.16

0.13

2.92 3.81

MILLIMETERS

A2 2.92 4.95

2.54 BSC

DIP-8

7.62 8.26

6.10 7.11

L10.92

7.62 BSC

MIN. MAX.

INCHES

0.210

0.015

0.100 BSC

0.300 BSC

0.115 0.195

0.014 0.022

0.045 0.070

0.008 0.014

0.355 0.400

0.005

0.300 0.325

0.240 0.280

0.430

0.115 0.150

Rev. A.3 - Mar., 2009 www.anpec.com.tw8

APM9946J

Classification Profile

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly

Preheat & Soak

Temperature min (Tsmin)

Temperature max (Tsmax)

Time (Tsmin to Tsmax) (ts)

100 °C

150 °C

60-120 seconds

150 °C

200 °C

60-120 seconds

Average ramp-up rate

(Tsmax to TP) 3 °C/second max. 3°C/second max.

Liquidous temperature (TL)

Time at liquidous (tL) 183 °C

60-150 seconds 217 °C

60-150 seconds

Peak package body Temperature

(Tp)* See Classification Temp in table 1 See Classification Temp in table 2

Time (tP)** within 5°C of the specified

classification temperature (Tc) 20** seconds 30** seconds

Average ramp-down rate (Tp to Tsmax)

6 °C/second max. 6 °C/second max.

Time 25°C to peak temperature 6 minutes max. 8 minutes max.

* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.

Classification Reflow Profiles

Rev. A.3 - Mar., 2009 www.anpec.com.tw9

APM9946J

Classification Reflow Profiles (Cont.)

Table 2. Pb-free Process – Classification Temperatures (Tc)

Package

Thickness Volume mm3

<350 Volume mm3

350-2000 Volume mm3

>2000

<1.6 mm 260 °C 260 °C 260 °C

1.6 mm – 2.5 mm 260 °C 250 °C 245 °C

≥2.5 mm 250 °C 245 °C 245 °C

Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)

Package

Thickness Volume mm3

<350 Volume mm3

≥350

<2.5 mm 235 °C 220 °C

≥2.5 mm 220 °C 220 °C

Reliability Test Program

Test item Method Description

SOLDERABILITY JESD-22, B102 5 Sec, 245°C

HOLT JESD-22, A108 1000 Hrs, Bias @ 125°C

PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C

TCT JESD-22, A104 500 Cycles, -65°C~150°C

Customer Service

Anpec Electronics Corp.

Head Office :

No.6, Dusing 1st Road, SBIP,

Hsin-Chu, Taiwan, R.O.C.

Tel : 886-3-5642000

Fax : 886-3-5642050

Taipei Branch :

2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,

Sindain City, Taipei County 23146, Taiwan

Tel : 886-2-2910-3838

Fax : 886-2-2917-3838