June 2000 - Ed: 2B 1/4
BAR 42
BAR 43, A, C, S
SMALL SIGNAL SCHOTTKY DIODES
Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 30 V
IFContinuous forward current 100 mA
IFSM Surge non repetitive forward current tp=10ms sinusoidal 750 mA
Ptot Power dissipation (note 1) Tamb =25°C 250 mW
Tstg Maximum storage temperature range - 65 to +150 °C
Tj Maximum operating junction temperature * 150 °C
TLMaximum temperature for soldering during 10s 260 °C
Note 1: for double diodes, Ptot is the total power dissipation of bothdiodes.
ABSOLUTE RATINGS (limiting values)
SOT-23
(Plastic)
K
N.C.
A
K
A1
A1
A2
A
K1
K2
K2
K1
A2
BAR42/BAR43 BAR43A
BAR43C BAR43S
*:
dPtot
dTj Rth j a
<−
1
()
thermal runaway condition for a diode on its own heatsink
Symbol Test conditions Value Unit
Rth(j-a) Junction-ambient * 500 °C/W
* Mounted on epoxy board with recommended pad layout.
THERMAL RESISTANCE
General purpose metal to silicon diodes featuring
very low turn-on voltage and fast switching.
DESCRIPTION
BAR 42/BAR 43, A, C, S
2/4
Symbol Test Conditions Min. Typ. Max. Unit
VBR Tj = 25°CIR= 100µA30 V
VF*Tj = 25°CBAR 42 IF= 10 mA 0.35 0.4 V
IF= 50 mA 0.5 0.65
BAR 43 IF= 2 mA 0.26 0.33
IF= 15 mA 0.45
All IF= 100 mA 1
IR** Tj = 25°CV
R
= 25V 500 nA
Tj = 100°C 100 µA
STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
CTj=25°CV
R
= 1V F = 1MHz 7 pF
trr Tj = 25°CI
F
=10mA I
R=10mA
I
rr = 1mA RL= 100 Ω5ns
η*Tj=25°CR
L
=50KΩC
L= 300 pF
F = 45Mhz Vi= 2V for BAR 43 80 %
DYNAMIC CHARACTERISTICS
0.00 0.05 0.10 0.15 0.20 0.25 0.300.35 0.40 0.45 0.50
0.00E+0
2.00E-3
4.00E-3
6.00E-3
8.00E-3
1.00E-2
1.20E-2
1.40E-2
1.60E-2
1.80E-2
2.00E-2
VFM(V)
IFM(A)
Tj=100°C
Tj=50°C
Tj=25°C
Fig. 1-1: Forward voltage drop versus forward
current (typical values, low level).
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
1E-3
1E-2
1E-1
5E-1
VFM(V)
IFM(A)
Tj=100°C
Tj=50°C
Tj=25°C
Fig. 1-2: Forward voltage drop versus forward
current (typical values, high level).
Pulse test: * tp = 380µs, δ<2%
** tp = 5 ms, δ<2%
* Detection effeciency
BAR 42/BAR 43, A, C, S
3/4
0 5 10 15 20 25 30
1E-2
1E-1
1E+0
1E+1
1E+2
VR(V)
IR(µA)
Tj=50°C
Tj=25°C
Tj=100°C
Fig. 2: Reverse leakage current versus reverse
voltage applied (typical values).
0 25 50 75 100 125 150
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
1E+4
Tj(°C)
IR(µA)
VR=30V
Fig. 3: Reverse leakage current versus junction
temperature.
12 5102030
1
2
5
10
VR(V)
C(pF)
F=1MHz
Tj=25°C
Fig. 4: Junction capacitance versus reverse
voltage applied (typical values).
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2
0.01
0.10
1.00
tp(s)
Zth(j-a)/Rth(j-a)
T
δ=tp/T tp
Single pulse
δ= 0.1
δ= 0.2
δ= 0.5
Fig. 5: Relative variation of thermal impedance
junction to ambient versus pulse duration (epoxy
FR4withrecommendedpadlayout, e(Cu)=35µm).
0 5 10 15 20 25 30 35 40 45 50
150
200
250
300
350
S(Cu) (mm )
Rth(j-a) (°C/W)
P=0.25W
Fig. 6: Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, copper thickness:
35µm).
BAR 42/BAR 43, A, C, S
4/4
PACKAGE MECHANICAL DATA
SOT-23(Plastic)
B
E
S
e
e1
A
D
c
L
H
A1
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 0.89 1.4 0.035 0.055
A1 0 0.1 0 0.004
B 0.3 0.51 0.012 0.02
c 0.085 0.18 0.003 0.007
D 2.75 3.04 0.108 0.12
e 0.85 1.05 0.033 0.041
e1 1.7 2.1 0.067 0.083
E 1.2 1.6 0.047 0.063
H 2.1 2.75 0.083 0.108
L 0.6 typ. 0.024 typ.
S 0.35 0.65 0.014 0.026
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0.9
0.035 0.9
0.035
1.9
0.075
mm
inch
2.35
0.92
1.1
0.043
1.1
0.043
1.45
0.037
0.9
0.035
FOOT PRINT DIMENSIONS
Ordering type Marking Package Weight Base qty Delivery mode
BAR42 D94 SOT-23 0.01g 3000 Tape & reel
BAR43 D95 SOT-23 0.01g 3000 Tape & reel
BAR43A DB1 SOT-23 0.01g 3000 Tape & reel
BAR43C DB2 SOT-23 0.01g 3000 Tape & reel
BAR43S DA5 SOT-23 0.01g 3000 Tape & reel
Epoxy meets UL94,V0
