AP18T10GM-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge D Single Drive Requirement Surface Mount Package Halogen Free & RoHS Compliant Product BVDSS 100V RDS(ON) 160m ID G 3A S D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. D G SO-8 S S S The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25 ID@TA=70 Rating Units 100 V +20 V 3 3 A 3 2.1 A Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V 1 IDM Pulsed Drain Current 12 A PD@TA=25 Total Power Dissipation 2.5 W TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance Junction-ambient Data and specifications subject to change without notice 3 Value Unit 50 /W 1 201004141 AP18T10GM-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units 100 - - V VGS=10V, ID=3A - - 160 m VGS=4.5V, ID=2A - - 225 m BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=3A - 4 - S IDSS Drain-Source Leakage Current VDS=80V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA ID=3A - 5.5 8.8 nC 2 VGS=0V, ID=250uA Qg Total Gate Charge Qgs Gate-Source Charge VDS=50V - 1.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 3 - nC VDS=50V - 4.5 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=1A - 6 - ns td(off) Turn-off Delay Time RG=3.3 - 16 - ns tf Fall Time VGS=10V - 5.5 - ns Ciss Input Capacitance VGS=0V - 400 640 pF Coss Output Capacitance VDS=25V - 75 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 45 - pF Rg Gate Resistance f=1.0MHz - 1.5 - Min. Typ. IS=1.9A, VGS=0V - - 1.3 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage Test Conditions Max. Units trr Reverse Recovery Time IS=3A, VGS=0V, - 40 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 70 - nC 2 Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board ; 125/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP18T10GM-HF 20 16 10V 7.0V 6.0V ID , Drain Current (A) 16 5.0V 12 8 V G =4.0V o 10V 8.0V 7.0V 6.0V V G =5.0V T A =150 C ID , Drain Current (A) T A =25 o C 12 8 4 4 0 0 0 2 4 6 8 0 3 V DS , Drain-to-Source Voltage (V) 6 9 12 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 200 2.3 I D =2A ID=3A V G =10V T A =25 o C 180 Normalized RDS(ON) RDS(ON) (m) 1.8 160 140 1.3 0.8 120 100 0.3 2 4 6 8 10 -50 50 100 150 Fig 4. Normalized On-Resistance v.s. Junction Temperature 8 1.5 6 1.2 Normalized VGS(th) (V) IS(A) Fig 3. On-Resistance v.s. Gate Voltage T j =150 o C 0 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) T j =25 o C 4 0.9 0.6 2 0.3 0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP18T10GM-HF f=1.0MHz 600 I D =3A V DS =50V 500 8 C (pF) VGS , Gate to Source Voltage (V) 10 6 C iss 400 300 4 200 2 100 0 C oss C rss 0 0 2 4 6 8 1 10 5 9 Q G , Total Gate Charge (nC) 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 Normalized Thermal Response (Rthja) Duty factor=0.5 10 Operation in this area limited by RDS(ON) 100us 1ms 10ms 100ms ID (A) 1 0.1 1s 0.01 DC o T A =25 C Single Pulse 0.001 0.2 0.1 0.1 0.05 PDM 0.02 t T 0.01 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + T a Single Pulse Rthja = 125/W 0.001 0.01 0.1 1 10 100 1000 0.0001 0.001 0.01 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4