IXGK82N120B3 - Zilog - Datasheet.Directory

Symbol Test Conditions Maximum Ratings

VCES TJ = 25°C to 150°C 1200 V

VCGR TJ = 25°C to 150°C, RGE = 1MΩ1200 V

VGES Continuous ±20 V

VGEM Transient ±30 V

IC25 TC= 25°C ( Chip Capability ) 230 A

IC110 TC= 110°C 82 A

ILRMS TC= 25°C ( Lead RMS Limit ) 120 A

ICM TC= 25°C, 1ms 500 A

IATC= 25°C 41 A

EAS TC= 25°C 750 mJ

SSOA VGE = 15V, TVJ = 125°C, RG = 2Ω ICM = 164 A

(RBSOA) Clamped Inductive Load VCE < VCES

PCTC= 25°C 1250 W

TJ -55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

TLMaximum Lead Temperature for Soldering 300 °C

TSOLD 1.6 mm (0.062 in.) from Case for 10 260 °C

MdMounting Torque ( IXGK ) 1.13/10 Nm/lb.in.

FCMounting Force ( IXGX ) 20..120/4.5..14.6 N/lb.

Weight TO-264 10 g

PLUS247 6 g

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

BVCES IC= 250μA, VCE = 0V 1200 V

VGE(th) IC= 1mA, VCE = VGE 3.0 5.0 V

ICES VCE = VCES, VGE = 0V 50 μA

TJ = 125°C, Note 1 5 mA

IGES VCE = 0V, VGE = ± 20V ±100 nA

VCE(sat) IC= IC110, VGE = 15V, Note 2 2.70 3.20 V

TJ = 125°C 2.64 V

DS100155(05/09)

GenX3TM 1200V

IGBTs

IXGK82N120B3

IXGX82N120B3

VCES = 1200V

IC110 = 82A

VCE(sat) ≤ ≤

≤ ≤

≤ 3.20V

High-Speed Low-Vsat PT IGBTs

for 3 - 20 kHz Switching

G = Gate E = Emitter

C = Collector TAB = Collector

(TAB)

TO-264 (IXGK)

E

G

CE

PLUS247TM (IXGX)

GC (TAB)

E

Advance Technical Information

Features

zOptimized for Low Conduction and

Switching Losses

zSquare RBSOA

zHigh Avalanche Capability

zInternational Standard Packages

Advantages

zHigh Power Density

zLow Gate Drive Requirement

Applications

zPower Inverters

zUPS

zSMPS

zPFC Circuits

zWelding Machines

zLamp Ballasts

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXGK82N120B3

IXGX82N120B3

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

gfs IC = 60A, VCE = 10V, Note 2 35 60 S

Cies 7900 pF

Coes VCE = 25V, VGE = 0V, f = 1 MHz 640 pF

Cres 170 pF

Qg(on) 350 nC

Qge IC = IC110, VGE = 15V, VCE = 0.5 • VCES 50 nC

Qgc 150 nC

td(on) 30 ns

tri 77 ns

Eon 5.0 mJ

td(off) 210 ns

tfi 100 180 ns

Eoff 3.3 6.2 mJ

td(on) 32 ns

tri 80 ns

Eon 6.8 mJ

td(off) 240 ns

tfi 520 ns

Eoff 7.1 mJ

RthJC 0.10 °C/W

RthCK 0.15 °C/W

Inductive load, TJ = 25°C

IC = 80A, VGE = 15V

VCE = 0.5 • VCES, RG = 2Ω

Note 3

Inductive load, TJ = 125°C

IC = 80A, VGE = 15V

VCE = 0.5 • VCES, RG = 2Ω

Note 3

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Terminals: 1 - Gate

2 - Drain (Collector)

3 - Source (Emitter)

PLUS247TM (IXGX) Outline

TO-264 (IXGK) Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.83 5.21 .190 .205

A12.29 2.54 .090 .100

A21.91 2.16 .075 .085

b 1.14 1.40 .045 .055

b11.91 2.13 .075 .084

b22.92 3.12 .115 .123

C 0.61 0.80 .024 .031

D 20.80 21.34 .819 .840

E 15.75 16.13 .620 .635

e 5.45 BSC .215 BSC

L 19.81 20.32 .780 .800

L1 3.81 4.32 .150 .170

Q 5.59 6.20 .220 0.244

R 4.32 4.83 .170 .190

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

Notes:

1. Part must be heatsunk for high-temp Ices measurement.

2. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.

3. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.

IXGK82N120B3

IXGX82N120B3

Fig. 1. Output Characteristics

@ 25 º C

0

20

40

60

80

100

120

140

160

180

0.00.51.01.52.02.53.03.54.04.5

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

11V

7V

5V

9V

Fig. 2. Extended Output Characteristics

@ 25 º C

0

40

80

120

160

200

240

280

320

0 2 4 6 8 101214161820

V

CE

- Volts

I

C

-

Amperes

V

GE

= 15V

13V

11V

7V

9V

5V

Fig. 3. Output Characteristics

@ 125ºC

0

20

40

60

80

100

120

140

160

180

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

11V

7V

5V

9V

Fig. 4. Dependence o f V

CE(sat)

on

Junction T emperature

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

-50-25 0 255075100125150

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 164A

I

C

= 82A

I

C

= 41A

Fi g . 5. C o l l ec to r -to -Emitter Vo l tag e

vs. Gate- to -Emi tter Vo l ta g e

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6 7 8 9 10 11 12 13 14 15

V

GE

- Volts

V

CE

- Volts

I

C

= 164

A

T

J

= 25ºC

41

A

82

A

Fig. 6. Input Admittance

0

20

40

60

80

100

120

140

160

180

3.54.04.55.05.56.06.57.07.58.08.5

V

GE

- Volts

I

C

-

Amperes

T

J

= 125ºC

25ºC

- 40ºC

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXGK82N120B3

IXGX82N120B3

IXYS REF: G_82N120B3H1(8T)5-14-09

Fi g . 11. Maximu m Tr an si ent Ther mal I mp ed an ce

0.001

0.010

0.100

1.000

0.00001 0.0001 0.001 0.01 0.1 1

Pulse Width - Second

Z

(th)JC

- ºC / W

Fi g . 11. Maximu m Tr an si en t Th er mal I mp e d an ce

Fig. 7. Transconductance

0

10

20

30

40

50

60

70

80

90

100

0 20 40 60 80 100 120 140 160 180

I

C

- Amperes

g

f s

-

Siemens

T

J

= - 40ºC

25ºC

125ºC

Fi g . 10. R ever se-B i as Safe Op er ati n g Area

0

20

40

60

80

100

120

140

160

180

200 300 400 500 600 700 800 900 1000 1100 1200

V

CE

- Volts

I

C

- Amperes

T

J

= 125ºC

R

G

= 2Ω

dV / dt < 10V / ns

Fig. 8. Gate Charge

0

2

4

6

8

10

12

14

16

0 50 100 150 200 250 300 350

Q

G

- NanoCoulombs

V

GE

- Volts

V

CE

= 600V

I

C

= 82A

I

G

= 10mA

Fig. 9. Capacitance

100

1,000

10,000

0 5 10 15 20 25 30 35 40

V

CE

- Volts

Capacitance - PicoFarads

f

= 1 MHz

Cies

Coes

Cres

IXGK82N120B3

IXGX82N120B3

Fi g . 12 . In d u ct iv e Swi tch i n g

Energ y L o ss vs. Gate R esistance

3

4

5

6

7

8

9

10

11

2 3 4 5 6 7 8 9 10 11 12 13 14 15

R

G

- Ohms

E

off

- MilliJoules

2

3

4

5

6

7

8

9

10

E

on

- MilliJoules

E

off

E

on

- - - -

T

J

= 125ºC , V

GE

= 15V

V

CE

= 600V

I

C

= 80A

I

C

= 40A

Fig. 15. Inductive Turn-off

Swit ch i n g Times vs . Gate R esi s tan ce

300

350

400

450

500

550

600

650

700

2 3 4 5 6 7 8 9 10 11 12 13 14 15

R

G

- Ohms

t

f i

- Nanoseconds

100

200

300

400

500

600

700

800

900

t

d(off)

- Nanoseconds

t

f i

t

d(off)

- - - -

T

J

= 125ºC,

V

GE

= 15V

V

CE

= 600V

I

C

= 80A

I

C

= 40A

Fi g . 13 . In d u ct iv e Swi tch i n g

Ener gy L o ss vs . C ol l ect o r C u r r en t

0

1

2

3

4

5

6

7

8

9

20 25 30 35 40 45 50 55 60 65 70 75 80

I

C

- Amperes

E

off

- MilliJoules

0

1

2

3

4

5

6

7

8

9

E

on

- MilliJoules

E

off

E

on

- - - -

R

G

= 2

Ω ,

V

GE

= 15V

V

CE

= 600V

T

J

= 125ºC

T

J

= 25ºC

Fi g . 14 . In d u ct iv e Swi tch i n g

Energ y L oss v s. Ju nct i on Temper at u r e

0

1

2

3

4

5

6

7

8

9

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

E

off

- MilliJoules

1

2

3

4

5

6

7

8

9

10

E

on

- MilliJoules

E

off

E

on

- - - -

R

G

= 2Ω

,

V

GE

= 15V

V

CE

= 600V

I

C

= 80A

I

C

= 40A

Fig. 16. Inductive T urn-off

Swit ch i n g Time s vs. C o l l ector C u r r en t

0

100

200

300

400

500

600

700

20 25 30 35 40 45 50 55 60 65 70 75 80

I

C

- Amperes

t

f i

- Nanoseconds

150

200

250

300

350

400

450

500

t

d(off)

- Nanoseconds

t

f i

t

d(off)

- - - -

R

G

= 2Ω

, V

GE

= 15V

V

CE

= 600V

T

J

= 125ºC

T

J

= 25ºC

Fig. 17. Inductive Turn-off

Switc hin g Times vs. Ju n ctio n Temp er atu r e

0

100

200

300

400

500

600

700

800

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

f i

- Nanoseconds

180

200

220

240

260

280

300

320

340

t

d(off)

- Nanoseconds

t

f i

t

d(off)

- - - -

R

G

= 2Ω

, V

GE

= 15V

V

CE

= 600V

I

C

= 40A, 80A

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXGK82N120B3

IXGX82N120B3

IXYS REF: G_82N120B3H1(8T)5-14-09

Fig. 19. Inductive Turn-on

Switching T imes vs. Collector Current

0

20

40

60

80

100

120

140

20 25 30 35 40 45 50 55 60 65 70 75 80

I

C

- Amperes

t

r i

- Nanoseconds

22

24

26

28

30

32

34

36

t

d

(

on

)

- Nanoseconds

t

r i

td(on)

- - - -

R

G

= 2Ω

, V

GE

= 15V

V

CE

= 600V

T

J

= 125ºC, 25ºC

Fig. 20. Inductive T urn-on

Switchin g Times vs. Jun ctio n Temp eratu r e

20

30

40

50

60

70

80

90

100

110

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

r i

- Nanoseconds

22

24

26

28

30

32

34

36

38

40

t

d

(

on

)

- Nanoseconds

t

r i

td(on)

- - - -

R

G

= 2Ω

, V

GE

= 15V

V

CE

= 600V

I

C

= 40A

I

C

= 80A

Fig. 18. Inductive T urn-on

Swit ch in g Ti mes v s. G at e Resistance

20

40

60

80

100

120

140

160

23456789101112131415

R

G

- Ohms

t

r i

- Nanoseconds

20

30

40

50

60

70

80

90

t

d

(

on

)

- Nanoseconds

t

r i

td(on)

- - - -

T

J

= 125ºC, V

GE

= 15V

V

CE

= 600V

I

C

= 40A

I

C

= 80A