TECHNICAL DATA
NPN SILICON MEDIUM POWER TRANSISTOR
Qualified per MIL-PRF-19500/207
Devices Qualified Level
2N1483 2N1484 2N1485 2N1486
JAN
JANTX
MAXIMUM RATINGS
Ratings Symbol 2N1483
2N1485 2N1484
2N1486 Unit
Collector-Emitter Voltage VCEO 40 55 Vdc
Collector-Base Voltage VCBO 60 100 Vdc
Emitter-Base Voltage VEBO 12 Vdc
Collector Current -- Continuous IC 3.0 Adc
Total Power Dissipation @ TA = 250C (1)
@ TC = 250C (2) PT 1.75
25 W
W
Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 0C
1) Derate linearly 0.010 W/0C for TA > 250C
2) Derate linearly 0.143 W/0C for TC > 250C
TO-8*
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100 mAdc 2N1483, 2N1485
2N1484, 2N1486
V(BR)CEO
40
55
Vdc
Collector-Base Breakdown Voltage
IC = 100 µAdc 2N1483, 2N1485
2N1484, 2N1486
V(BR)CBO
60
100
Vdc
Collector-Emitter Breakdown Voltage
VEB = 1.5 Vdc, IC = 0.25 mAdc 2N1483, 2N1485
2N1484, 2N1486
V(BR)CEX
60
100
Vdc
Collector-Base Cutoff Current
VCB = 30 Vdc 2N1483, 2N1485
VCB = 50 Vdc 2N1484, 2N1486
ICBO
15
15
µAdc
Emitter-Base Cutoff Current
VEB = 12 Vdc IEBO 15 µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
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