Advance Product Information
June 18, 2004
1
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specif i cat i o ns. Specif i cations are subject to change wit hout noti ce.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Ku Band 6.5 W Power Amplifier TGA2514- EPU
Primary Applications
• Ku band VSAT Transmitter
• Point t o Point Radio
Key Features
• Frequency Range : 13 - 18 GHz
• 38.5 dBm Nominal Psat from 13.75 - 14 GHz
• 38 dBm Nominal Psat from 13-16 GHz
• 37.5 dBm Nominal Psat from 16-18 GHz
• 33 dBc IMD3 @ 27 dBm Pout/tone @ 14 GHz
• 24 dB No minal Gain
• 12 dB No minal Return Loss
• 0.25-µm 3MI pHEMT Technology
• Bias Conditions: 8 V @ 2.6 A Idq
• Chip siz e: 2.87 x 3.90 x .10 mm
• (0.113 x 0.154 x 0.004)
Measured Fixtured Data
Bias Conditions: Vd = 8 V, Idq = 2.6A
Product Description
The TriQuint TGA2514-EPU is a compact
6.5 W Ku-band Power Amplifier which
operates from 13-18 GHz. The
TGA2514-EPU is designed using
TriQuint’s proven standard 0.25-µm gate
pHEMT production process.
The TGA2514-EPU provides a nominal
38 dBm of saturated power with a small
signal gain of 24 dB. Typical return loss
is 14 dB.
The TGA2514-EPU is 100% DC and RF
tested on-wafer to ensure performance
compliance.
-28
-24
-20
-16
-12
-8
-4
0
4
8
12
16
20
24
28
8 10121416182022
Frequency (GHz)
Gain (dB)
-28
-24
-20
-16
-12
-8
-4
0
4
8
12
16
20
24
28
Return Loss (dB)
28
29
30
31
32
33
34
35
36
37
38
39
40
12 13 14 15 16 17 18 19 20
Frequency (GHz)
Psat (dBm)
Advance Product Information
June 18, 2004
2
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specif i cat i o ns. Specif i cations are subject to change wit hout noti ce.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
TABLE I
MAXIMUM RATINGS
Symbol Parameter 1/ Value Notes
V+Positive Supply Voltage 9 V 2/
V-Negative Supply Voltage Range -5V TO 0V
I+Positive Supply Current 4 A 2/
| IG | Gate S upply Current 113 m A
PIN Input Continuous Wave Power 30.3 dBm 2/
PDPower Dissipation 20.8 W 2/, 3/
TCH Operating Channel Temperature 150 0C 4/, 5/
TMMounting Temp erature
(30 S econd s ) 320 0C
TSTG S torage Temp erature -65 to 150 0C
1/ These ratings represent the maximum operable values for this device.
2/ Combinations of supply voltage, supply current, input power, and output power shall not
exceed PD.
3/ When operated at this bias condition with a base plate temperature of 70 0C,
the median life is 1E+6 hours.
4/ Junction operating temperature will directly affect the device median time to failure (TM).
Fo r maxim u m life, it is rec ommended th at jun c tion te mpe r ature s be m a intai ned a t the
lowest p o ssible levels.
5/ These ratings apply to each individual FET.
TGA2514-EPU
Advance Product Information
June 18, 2004
3
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specif i cat i o ns. Specif i cations are subject to change wit hout noti ce.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
TABLE III
THERMAL INFORM ATION
Parameter Test Conditions TCH
(oC) R
T
JC
(qC/W) TM
(HRS)
RθJC Thermal
Resistance
(channel t o backside of
carrier)
Vd = 8 V
ID = 2.6 A
Pdiss = 20.8 W 150 3.9 1 E+6
Note: Assum es eut ectic attach using 1.5 mil 80/20 AuSn mounted to a 2 0 mil
CuMo Carrier at 70°C baseplate temperature. Wo r st case condition with no RF
applied, 100% of DC power is dissipated.
TABLE II
RF CHARACTERIZATION TABLE
(TA = 25qC, Nominal)
(Vd = 8V, Id = 2.6 A)
SYMBOL PARAMETER TEST
CONDITION TYPICAL UNITS
Gain Small Signal G a in f = 13-18 GHz 24 dB
IRL Input Return Loss f = 13-18 GHz 12 dB
ORL Output Return Loss f = 13-18 GHz 12 dB
Psat Saturat ed Power f = 13-16 GHz
f = 16-18 GHz 38
37.5 dBm
TOI Third Order Int e r c ept
@ Pout/tone = 27dBm f = 14 GHz 44 dBm
IMD3 Output IMD3 @
Pout/tone = 27 dBm f = 14 GHz 33 dBc
Note: Table III Lists the RF Characteristics of typical devices as determined by
fixtured measur em ent s.
TGA2514-EPU
Advance Product Information
June 18, 2004
4
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specif i cat i o ns. Specif i cations are subject to change wit hout noti ce.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Bias Conditions: Vd = 8 V, Idq = 2.6A
TGA2514-EPU
Measured Fixture Data
-28
-24
-20
-16
-12
-8
-4
0
4
8
12
16
20
24
28
8 10121416182022
Frequency (GHz)
Gain (dB)
-28
-24
-20
-16
-12
-8
-4
0
4
8
12
16
20
24
28
Return Loss (dB)
28
29
30
31
32
33
34
35
36
37
38
39
40
12 13 14 15 16 17 18 19 20
Frequency (GHz)
Output Power (dBm)
Psat
P1dB
Advance Product Information
June 18, 2004
5
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specif i cat i o ns. Specif i cations are subject to change wit hout noti ce.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Bias Conditions: Vd = 8 V, Idq = 2.6A
TGA2514-EPU
Measured Fixture Data
2
2.2
2.4
2.6
2.8
3
3.2
3.4
3.6
3.8
4
4 6 8 101214161820
Pin (dBm )
Drain Current (A)
13GHz
13 .5 GHz
14 GHz
14 .5 GHz
15GHz
15.5GHz
16 GHz
16.5GHz
17 Ghz
17 .5 GHz
18 GHz
16
18
20
22
24
26
4 6 8 101214161820
Pin (dBm)
Power Gain (d B )
13GHz
13.5 GHz
14 GHz
14.5 GHz
15GHz
15.5GHz
16 GHz
16.5GHz
17 Ghz
17.5 GHz
18 GHz
20
25
30
35
40
4 6 8 101214161820
Pin (dBm)
Pout(dBm)
13 GHz
13.5 GHz
14 GHz
14.5 GHz
15 GHz
15.5 GHz
16 GHz
16.5 GHz
17 GHz
17.5 GHz
18 GHz
Advance Product Information
June 18, 2004
6
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specif i cat i o ns. Specif i cations are subject to change wit hout noti ce.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Bias Conditions: Vd = 8 V, Idq = 2.6A
TGA2514-EPU
Measured Fixture Data
0
10
20
30
40
50
60
12 14 16 18 20 22 24 26 28 30 32
Output Power/Tone (dBm)
IMD3 (dBc)
13 GHz
13.5 GHz
14 GHz
14.5GHz
15 GHz
15.5 GHz
16 GHz
16.5 GHz
17 GHz
17.5 GHz
18 GHz
30
32
34
36
38
40
42
44
46
48
50
12 14 16 18 20 22 24 26 28 30 32
Output Power/Tone (dBm)
TOI (dBm)
13 GHz
13.5 GHz
14 GHz
14.5GHz
15 GHz
15.5 GHz
16 GHz
16.5 GHz
17 GHz
17.5 GHz
18 GHz
Advance Product Information
June 18, 2004
7
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specif i cat i o ns. Specif i cations are subject to change wit hout noti ce.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Vg
Vg
Vd
Vd
Recommended Chip Assembly Diagram
GaAs MMIC devices are susceptible to damage from Elec trostatic Disc harge. Proper precautions should
be observed during handling, assembly and test.
20 mil ribbon
TGA2514-EPU
Notes:
1. 1µF capacitors on gate & drain lines are required.
2. Vg connection is recommended on both sides for devices operating at or above P1dB.
If operating below P1dB, Vg may be connected from either side.
3. Vd connection must be biased from both sides.
Advance Product Information
June 18, 2004
8
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specif i cat i o ns. Specif i cations are subject to change wit hout noti ce.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Mechanical Drawing
GaAs MMIC devices are susceptible to damage from Elec trostatic Disc harge. Proper precautions should
be observed during handling, assembly and test.
0.000 (0.000)
0.148 (0.006)
1.136 (0.045)
3.748 (0.148)
3.903 (0.154)
0.161 (0.006)
2.764 (0.109)
3.742 (0.147)
0.000 (0.000)
0.142 (0.006)
0.722 (0.028)
1.113 (0.044 )
2.358 (0.093)
2.872 (0.113)
0.722 (0.028)
1.113 (0.044)
2.358 (0.09 3)
2.732 (0.10 8)
1
234
5
6
7
8
Units: Millimeters (in ch e s)
Thickness: 0.100 (0.004) (reference only)
Chip edge to bond p ad dimensions are show n to center of bond pad
Chip size +/- 0.05 (0.002)
GND IS BACKSIDE OF MMIC
RF Input
Vg
Vd
Vd
RF Output
Bond pad #1
Bond pads #2, 8
Bond pads #3, 7
Bond pads # 4, 6
Bond pad #5
0.096 x 0.200 (0.004 x 0.008)
0.098 x 0.098 (0.004 x 0.004)
0.198 x 0.100 (0.008 x 0.004)
0.296 x 0.178 (0.012 x 0.007)
0.096 x 0.200 (0.004 x 0.008)
TGA2514-EPU
Advance Product Information
June 18, 2004
9
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specif i cat i o ns. Specif i cations are subject to change wit hout noti ce.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Assembly Process Notes
GaAs MMIC devices are susceptible to damage from Elec trostatic Disc harge. Proper precautions should
be observed during handling, assembly and test.
Reflow process assembly notes:
• Use AuSn (80/20 ) solder with limit ed exposure to temperatures at or above 300°C
(for 30 sec max).
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• No fluxe s should be utilized.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• Devices must be s tored in a dry nitrogen atm osphere.
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critic al during auto placement.
• Organic attachment can be used in low-power applications.
• Curing sh ould be done in a convection oven; pr oper exhaust is a safety concern.
• Microwave or radiant curing s hould not be used because of differential hea ting.
• Coefficient of thermal expansion matching is critical.
Interconnect proces s assembly notes :
• Therm osonic ball bonding is the pr eferred interconnect technique.
• Force, time, and ultrasonics are crit ical parameters .
• Aluminum wire should not be used.
• Discrete FET devices with small pad siz es should be bonded with 0.0007-inch wire.
• Maximum stage te mperature is 200°C.
TGA2514-EPU
