Advance Product Information
June 18, 2004
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Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specif i cat i o ns. Specif i cations are subject to change wit hout noti ce.
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Assembly Process Notes
GaAs MMIC devices are susceptible to damage from Elec trostatic Disc harge. Proper precautions should
be observed during handling, assembly and test.
Reflow process assembly notes:
• Use AuSn (80/20 ) solder with limit ed exposure to temperatures at or above 300°C
(for 30 sec max).
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• No fluxe s should be utilized.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• Devices must be s tored in a dry nitrogen atm osphere.
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critic al during auto placement.
• Organic attachment can be used in low-power applications.
• Curing sh ould be done in a convection oven; pr oper exhaust is a safety concern.
• Microwave or radiant curing s hould not be used because of differential hea ting.
• Coefficient of thermal expansion matching is critical.
Interconnect proces s assembly notes :
• Therm osonic ball bonding is the pr eferred interconnect technique.
• Force, time, and ultrasonics are crit ical parameters .
• Aluminum wire should not be used.
• Discrete FET devices with small pad siz es should be bonded with 0.0007-inch wire.
• Maximum stage te mperature is 200°C.
TGA2514-EPU