CED02N7/CEU02N7
6 - 12
C, Capacitance (pF)
ID, Drain Current (A)
ID, Drain Current (A)
VTH, Normalized
Gate-Source Threshold Voltage
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
Ciss
Coss
Crss
300
250
200
150
100
50
00 5 10 15 20 25
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VGS=10V
ID=1A
-100 -50 0 50 100 150 200
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
ID=250µA
-50 -25 0 25 50 75 100 125 150
IS, Source-drain current (A)
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
0.4 0.6 0.8 1.0
100
10-1
10-2
1.2 1.4
VGS=0V
0 5 10 15 20 25
0.0
0.5
1.0
1.5
2.0
2.5
3.0
100
2 4 6 8
TJ=150 C
-55 C
25 C
10-1
1.VDS=40V
2.Pulse Test
10