OVID foe) Internally Matched Power GaAs FETs aOR E FEATURES * High Output Power: Pj gp = 36dBm (Typ.) * High Gain: G4 gp = 8.0dB (Typ.) * High PAE: nadg = 30% (Typ.) * Low IMg = -45dBc@Po = 25dBm * Broad Band: 6.4 ~ 7.2GHz * Impedance Matched Zin/Zout = 50 * Hermetically Sealed Package DESCRIPTION The FLM6472-4D is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain ina 50 ohm system. Fujitsus stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C) Item Symbol Condition Rating Unit Drain-Source Voltage Vbs 15 Vv Gate-Source Voltage Vas 5 Vv Total Power Dissipation PT Te = 25C 25 Ww Storage Temperature | Tstg -65 to +175 C Channel Temperature Tch 175 C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (Vpg) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 8 and -2.2 mA respectively with gate resistance of 1002. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C ltem Test Conditions Sain ie Me Unit Saturated Drain Current Ipss_| Vps =5V, Vas = 0V - 1800 | 2700 mA Transconductance dm Vos = 5V, Ips =1100mA - 1000] - mS Pinch-off Voltage Vp Vos = 5V, Ips =90mA -1.0 | -2.0 | -3.5 V Gate Source Breakdown Voltage | VGSO | IGs = -90uA 5 - - Vv Output Power at 1dB G.C_P. P1dB 35 36 - dBm Power Gain at 1dB G.C.P. Gidap | VDs =10V, 7.0 | 8.0 - dB Drain Current ldsr PS OS IDSs (TyP,) - | 1100 | 1300 mA Power-added Efficiency Nadd | Zg=Z); =50 ohm - 30 - % Gain Flatness AG - - | +0.6 dB wee intermodulation IM3 De Af= 10 MHz 40 | -45 ; dBe Pout = 25dBm S.C.L. Thermal Resistance Rth Channel to Case - 5 6 C/W CASE STYLE: IB G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level 1998 Microwave Databook 396 Data SheetsFLM6472-4D Re) See Internally Matched Power GaAs FETs OUTPUT POWER vs. FREQUENCY OUTPUT POWER vs. INPUT POWER Vps=10V Vps=10V =e -_-. P4dB 40 f = 6.8 GHz oS Pin=30dBm e 38 2 36 a = 26dBm 5 a 5 34 Pout 45 3 24dBm . | xe 20dBm O 30 oe 15 64 66 68 7.0 7.2 20 22 24 26 28 30 Frequency (GHz) Input Power (dBm) OUTPUT POWER & IM3 vs. INPUT POWER E 31 |f1=7.2 GHz - S ,,\f2=7.21 GHz 4 > 29 2-tone test V4 ae A Pout OQ 27 -20 o Y YY S 25 / "4 -30 g WA a zB S 93 | -40 2 2 /| [1 = 5 O 19 14 16 18 20 22 24 Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level Data Sheets 397 1998 Microwave DatabookBCLS DY foe) Internally Matched Power GaAs FETs aOR E o So4 s7o-- S49 ; \ -| 63 SCALE FOR |y4 1 \ \ 0.2 | {0.4 6.2 GHz I" I SCALE FOR |o4| \ I S-PARAMETERS Vps = 10V, IDs = 1100mA FREQUENCY S11 S21 $12 $22 (MHZ) MAG ANG MAG ANG MAG ~~ ANG MAG ANG 6200 29 -177 3.47 29 .06 8 71 -62 6300 .26 158 3.52 15 .06 -23 .68 -73 6400 .25 134 3.65 3 .07 -39 .66 -84 6500 24 114 3.63 -12 .07 -54 62 -95 6600 22 96 3.67 -26 .08 -66 58 -106 6700 .20 77 3.70 -40 .08 -79 55 -119 6800 14 59 3.67 -54 .08 -91 52 -133 6900 .09 38 3.68 -67 .09 -103 .50 -146 7000 .04 8 3.67 -83 .09 -117 46 -160 7100 .06 -126 3.60 -100 .09 -132 46 -175 7200 15 -156 3.49 -116 10 -143 45 166 7300 .25 -175 3.23 -132 .09 -157 46 148 7400 37 167 3.03 -146 .09 -169 45 131 1998 Microwave Databook 398 Data SheetsFLM6472-4D Re) ae) I Internally Matched Power GaAs FETs Case Style "IB" Metal-Ceramic Hermetic Package ro 2.0 Min. (0.079) k o| gia = u i al. | a8 J 2-R1.6#0.15 Se 7 0.063 | ( ) y eS | 0.6 ce LJ 2.640.15 10.024) : 0.102) |S oO 10.7 NI << ray & 5.2 Max. | ol ~(0.205) 12.0 ! eo | A 218 Nilo as | (0.422) 17.0+0.15 Wo (0.669) 2: Source (Flange) 3: Drain 1: Gate (0.827) ~ nit: mm (Inches) 399 1998 Microwave Databook Data Sheets