SILICON PLANAR PNP _ 2N 4035 | GENERAL PURPOSE AMPLIFIERS AND SWITCHES The 2N 4034 and 2N 4035 are silicon planar epitaxial PNP transistors in Jedec TO-18 metal case, primarily intended for small signal, low noise industrial applications. ABSOLUTE MAXIMUM RATINGS VcBo Collector-base voltage (I~ = 0} -40 Vv Vee Collector-emitter voltage (Ig = 0) -40 Vv Veso Emitter-base voltage (Iq= Q) -5 Vv le Collector current -100 mA Prot Total power dissipation at Tamp < 25C 0.36 Ww at Tease & 25C 1 Ww Totg. Tj Storage and junction temperature ~65 to 200 C MECHANICAL DATA Dimensions in mm _(sim. to TO-18) 283 7/76THERMAL DATA Rth jecase Thermal resistance junction-case max 175 C/W th amp Thermal resistance junction-ambient max 486 C/W ELECTRICAL CHARACTERISTICS (T,,,,= 25C unless otherwise specified) Parameter Test conditions Min. Typ. Max.| Unit lees Collector cutoff Vee= -30V -15| nA current (V ge= 0) Vee=-30V Tamp= 125C -15) MA Visrjycpo Collector-base 1g=-10uUA -40 Vv breakdown voltage (le= 0) Vieryces Collector-emitter 1o=-10 UA -40 Vv breakdown voltage (Vee= 0) Veo (sus) Collector-emitter Io=-10mA -40 Vv sustaining voltage (lp=0 VipryEBO Emitter-base le= -10uUA -5 Vv breakdown voltage (o= 0) Vee gat) Collector-emitter Ilo=-1mA Izp=-0.1mA ~0.13) V saturation voltage *1te=-10mA Ilg=-1 mA ~0.14); V *11g=-50mA I_p=-5mA -0.3) V Vee(sat) Base-emitter Ic=-1mMmA Ilg=-0.1 mA -0.75|) V saturation voltage *11G=-10mA Ig=-imA_ {-0.7 ~0.9; V *11g=-50mMA Ip=-5mA -1.1] V here DC current gain for 2N 4034 lc=-10UA Vee=-1V 20 _ Ie=-100 NA Vee= -1V 50 _- lc=-ImA Vcoe=-1V_ (60 - *Tle=-10mMA Vee=-1V 70 200}; *llg=-5OmMA Veeg=-1V 15 - * Io=-10 mA Vcee=-1V Tamp= -55C 30 - for 2N 4035 lo=-10UA Vee=-1V 70 - IG=-100KHA Vee=-1V 140 - \c=-1mA Vee=-1V_ 1150 ~ *lle=-10MA Vee=-1V 150 300) *l1g=-50mMA Vee=-1V 30 - *lIc=-10mMA_ Vcoe=-1V Tamp= ~55C 70 _ELECTRICAL CHARACTERISTICS (continued) Parameter Test conditions Min. Typ. Max.! Unit Nte Small signal current Ip=-1mA Vce= -10V gain f =1 kHz for 2N 4034 50 300] for 2N 4035 |150 450| fr Transition frequency Ic=-10mMA) VeEe= -20V f = 100 MHz for 2N 4034 |400 MHz for 2N 4035 450 MHz CEeBo Emitter-base Ic= Vep= -0.5V capacitance f = 1 MHz 5.51 pF Ceso Collector-base le=0 Vcp=-10V capacitance f = 1 MHz 3.5] pF NF Noise figure Ic=-1mA Vce= -5V f=100MHz R, = 1002 6; dB ton Turn-on time lc=-50mMA Vec=-30V lgi=-5mMA 40; ns lott Turn-off time le=-50mMA Vece= -30V lpi=-lgo=-5 MA 150) ns hie Input impedance Ic=-1mA Vee -10V f =1 kHz for 2N 4034 |1 8] ka for 2N 4035 [4 12] ka Tre Reverse voltage ratio lc=-1mA Vee= -10V f=1 kHz for 2N 4034 3x104} for 2N 4035 4x104) Noe Output admittance le=-1mA Vee= -10V f = 1 kHz for 2N 4034 {2 24) us for 2N 4035 (8 40] us TppCye Feedback time constant} |@-=-10mMA Vee=-20V f = 80 MHz 40 | ps * Pulsed: pulse duration = 300 Us, duty cycle= 1% 285