FDPF44N25T — N-Channel UniFETTM MOSFET
©2009 Fairchild Semiconductor Corporation
FDPF44N25T Rev. C2
www.fairchildsemi.com
2
Package Marking and Ordering Information
Electrical Characteristics TC = 25°C unless otherwise noted.
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 1.7 mH, IAS = 44 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 44 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FDPF44N25T FDPF44N25T TO-220F Tube N/A N/A 50 units
FDPF44N25TRDTU FDPF44N25T TO-220F
(LG-formed) Tube N/A N/A 50 units
Symbol Parameter Conditions Min. Typ. Max. Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA, TJ = 25°C 250 -- -- V
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient ID = 250 μA, Referenced to 25°C--0.25--V/°C
IDSS Zero Gate Voltage Drain Current VDS = 250 V, VGS = 0 V
VDS = 200 V, TC = 125°C
--
--
--
--
1
10
μA
μA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA3.0--5.0V
RDS(on) Static Drain-Source
On-Resistance VGS = 10 V, ID = 22 A -- 0.058 0.069 Ω
gFS Forward Transconductance VDS = 40 V, ID = 22 A -- 32 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 2210 2870 pF
Coss Output Capacitance -- 450 585 pF
Crss Reverse Transfer Capacitance -- 60 90 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 125 V, ID = 44 A,
RG = 25 Ω
(Note 4)
-- 53 117 ns
trTurn-On Rise Time -- 402 814 ns
td(off) Turn-Off Delay Time -- 85 179 ns
tfTurn-Off Fall Time -- 112 234 ns
QgTotal Gate Charge VDS = 200 V, ID = 44 A,
VGS = 10 V
(Note 4)
-- 47 61 nC
Qgs Gate-Source Charge -- 18 -- nC
Qgd Gate-Drain Charge -- 24 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- 44 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 176 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 44 A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0 V, IS = 44 A,
dIF/dt =100 A/μs
-- 195 -- ns
Qrr Reverse Recovery Charge -- 1.8 -- μC