Preliminary Data Sheet I2147 rev. C 03/99 SAFEIR Series 16TTS..FP PHASE CONTROL SCR TO-220 FULLPAK Description/Features The 16TTS..FP SAFE IR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 C junction temperature. VT < 1.4V @ 10A ITSM = 200A VRRM 800 to 1600V Typical applications are in input rectification (soft start) and these products are designed to be used with International Rectifier input diodes, switches and output rectifiers which are available in identical package outlines. Fully isolated package (VINS = 2500 VRMS) UL E78996 approved Output Current in Typical Applications Applications Single-phase Bridge Three-phase Bridge Units 13.5 17 A Capacitive input filter TA = 55C,TJ = 125C, common heatsink of 1C/W Major Ratings and Characteristics Characteristics IT(AV) Sinusoidal Package Outline 16TTS..FP Units 10 A 16 A up to 1600 V 200 A 1.4 V dv/dt 500 V/s di/dt 150 A/s - 40 to 125 C waveform IRMS VRRM/VDRM ITSM VT T J @ 10 A, T J = 25C range www.irf.com TO-220 FULLPAK 1 16TTS..FP SAFEIR Series Preliminary Data Sheet I2147 rev. C 03/99 Voltage Ratings VRRM, maximum VDRM , maximum IRRM/IDRM Part Number peak reverse voltage V peak direct voltage V 125C mA 16TTS08FP 800 800 10 16TTS12FP 1200 1200 16TTS16FP 1600 1600 Absolute Maximum Ratings Parameters 16TTS..FP Units IT(AV) Max. Average On-state Current 10 A IRMS Max. RMS On-state Current 16 ITSM Max.PeakOneCycleNon-Repetitive 170 Surge Current 200 I2t Max. I2t for fusing 144 10ms Sine pulse, rated VRRMapplied 10ms Sine pulse, no voltage reapplied A 2s 200 2 2 Max. I t for fusing VTM Max. On-state Voltage Drop 1.4 V rt On-state Slope Resistance 24.0 m VT(TO) Threshold Voltage 1.1 V IRM/IDM Max.Reverse and Direct 0.5 mA Leakage Current 10 IL Holding Current 2000 A s Typ. Max. @ 10A, TJ = 25C TJ = 125C TJ = 25 C -- 100 100 150 VR = rated VRRM/ VDRM Anode Supply = 6V, Resistive load, Initial I T=1A mA 16TTS08FP, 16TTS12FP 16TTS16FP mA dv/dt Max. Rate of Rise of off-state Voltage 500 V/s di/dt 150 A/s Max. Rate of Rise of turned-on Current t = 0.1 to 10ms, no voltage reapplied TJ = 125 C 200 2 Max. Latching Current 10ms Sine pulse, rated VRRMapplied 10ms Sine pulse, no voltage reapplied 2 I t IH Conditions @ TC = 95 C, 180 conduction half sine wave Anode Supply = 6V, Resistive load www.irf.com 16TTS..FP SAFEIR Series Preliminary Data Sheet I2147 rev. C 03/99 Triggering Parameters PGM 8.0 W PG(AV) Max. average Gate Power 2.0 + IGM Max. paek positive Gate Current 1.5 A - VGM Max. paek negative Gate Voltage 10 V IGT 90 mA Max. required DC Gate Current to trigger VGT Conditions 16TTS..FP Units Max. peak Gate Power Max. required DC Gate Voltage 60 Anode supply = 6V, resistive load, TJ = 25C 35 Anode supply = 6V, resistive load, TJ = 125C 3.0 to trigger Anode supply = 6V, resistive load, TJ = - 10C V Anode supply = 6V, resistive load, TJ = - 10C 2.0 Anode supply = 6V, resistive load, TJ = 25C 1.0 Anode supply = 6V, resistive load, TJ = 125C VGD Max. DC Gate Voltage not to trigger 0.2 IGD Max. DC Gate Current not to trigger 2.0 TJ = 125C, VDRM = rated value mA TJ = 125C, VDRM = rated value Switching Parameters Conditions 16TTS..FP Units tgt Typical turn-on time trr Typical reverse recovery time tq Typical turn-off time 0.9 s 4 TJ = 25C TJ = 125C 110 Thermal-Mechanical Specifications Parameters Conditions 16TTS..FP Units TJ Max. Junction Temperature Range - 40 to 125 T stg Max. Storage Temperature Range - 40 to 125 RthJC Max. Thermal Resistance Junction 1.5 to Case RthJA Max. Thermal Resistance Junction 62 C C/W DC operation to Ambient RthCS Typ. Thermal Resistance Case to Heatsink wt Approximate Weight T Mounting Torque Case Style www.irf.com 1.5 Mounting surface, smooth and greased 2 (0.07) g (oz.) Min. 6 (5) Max. 12 (10) Kg-cm (Ibf-in) TO-220 FULLPAK (94/V0) 3 16TTS..FP SAFEIR Series 130 16TTS..FP Series R thJC (DC) = 1.5 C/W 120 110 Conduction Angle 100 30 60 90 90 120 180 80 0 2 4 6 8 10 12 Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C) Preliminary Data Sheet I2147 rev. C 03/99 130 16TTS..FP Series R thJC (DC) = 1.5 C/W 120 110 Conduction Period 100 30 90 120 180 0 2 10 RMS Limit 8 6 Conduction Angle 4 16TTS..FP Series T J= 125C 2 0 0 2 4 6 8 10 12 Maximum Average On-state Power Loss (W) Maximum Average On-state Power Loss (W) 12 Initial T J= 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 140 120 100 16TTS..FP Series 80 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current 4 14 16 18 DC 180 120 90 60 30 20 15 RMS Limit 10 Conduction Period 5 16TTS..FP Series T J = 125C 0 0 4 8 12 16 Fig. 4 - On-state Power Loss Characteristics Peak Half Sine Wave Forward Current (A) Peak Half Sine Wave On-state Current (A) At Any Rated Load Condition And With Rated V RRM Applied Following Surge. 1 10 12 Average On-state Current (A) Fig. 3 - On-state Power Loss Characteristics 160 8 25 Average On-state Current (A) 180 6 Fig. 2 - Current Rating Characteristics 18 14 4 Average On-state Current (A) Fig. 1 - Current Rating Characteristics 16 DC 80 Average On-state Current (A) 180 120 90 60 30 60 90 200 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial T J= 125C No Voltage Reapplied Rated V RRM Reapplied 180 160 140 120 100 16TTS..FP Series 80 0.01 0.1 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current www.irf.com 16TTS..FP SAFEIR Series Preliminary Data Sheet I2147 rev. C 03/99 Instantaneous On-state Current (A) 1000 16TTS..FP Series 100 10 T J= 25C T J= 125C 1 0 1 2 3 4 5 Instantaneous On-state Voltage (V) Transient Thermal Impedance Z thJC (C/W) Fig. 7 - On-state Voltage Drop Characteristics 10 Steady State Value (DC Operation) 1 D D D D D = 0.50 = 0.33 = 0.25 = 0.17 = 0.08 0.1 Single Pulse 0.01 0.0001 16TTS..FP Series 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Rectangular gate pulse a)Recommended load line for rated di/dt: 10 V, 20 ohms tr = 0.5 s, tp >= 6 s b)Recommended load line for <= 30% rated di/dt: 10 V, 65 ohms 10 tr = 1 s, tp >= 6 s (1) PGM = 40 , tp = 1 ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 8 W, tp = 5 ms (4) PGM = 4 W, tp = 10 ms (a) (b) VGD IGD 0.1 0.001 TJ = -10 C TJ = 125 C 1 TJ = 25 C Instantaneous Gate Voltage (V) 100 (4) 0.1 (2) (1) Frequency Limited by PG(AV) 16TTS..FP Series 0.01 (3) 1 10 100 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics www.irf.com 5 16TTS..FP SAFEIR Series Preliminary Data Sheet I2147 rev. C 03/99 Outline Table 10.6 H OLE o 3.4 10.4 3.1 16.4 15.4 16.0 15.8 7.1 6.7 3.7 3 .2 2.8 2.6 13.7 13.5 3.3 3.1 10 0.9 0.7 2.54 TYP. 2.54 TYP. 0.48 0.44 2.85 2.65 1.4 1.3 1.15 TYP. 1.05 R0.7 (2 PLACES) 4.8 4.6 R 0.5 Dimensions in millimeters (and inches) 5 0.5 5 0.5 Ordering Information Table Device Code 16 T T S 16 FP 1 2 3 4 5 6 1 - Current Rating, RMS value 2 - Circuit Configuration: 3 - Package: 2 (A) 1 (K) (G) 3 T = Single Thyristor T = TO-220AC 6 4 - Type of Silicon: S = Converter Grade 08 = 800V 5 - Voltage code: Code x 100 = V RRM 12 = 1200V 6 - TO-220 FULLPAK 16 = 1600V www.irf.com 16TTS..FP SAFEIR Series Preliminary Data Sheet I2147 rev. C 03/99 WORLD HEADQUARTERS: EUROPEAN HEADQUARTERS: IR CANADA: IR GERMANY: IR ITALY: IR FAR EAST: IR SOUTHEAST ASIA: IR TAIWAN: http://www.irf.com www.irf.com 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332. Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408. 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801. Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933. Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220. K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086. 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630. 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936. Fax-On-Demand: +44 1883 733420 Data and specifications subject to change without notice. 7