1
PHASE CONTROL SCR
TO-220 FULLPAK
Preliminary Data Sheet I2147 rev. C 03/99
SAFE
IR
Series
16TTS..FP
VT< 1.4V @ 10A
ITSM = 200A
V
RRM 800 to 1600V
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Description/Features
The 16TTS..FP SAFE
IR
series of silicon
controlled rectifiers are specifically designed for
medium power switching and phase control
applications. The glass passivation technology
used has reliable operation up to 125° C junction
temperature.
Typical applications are in input rectification (soft
start) and these products are designed to be used
with International Rectifier input diodes, switches
and output rectifiers which are available in identical
package outlines.
Fully isolated package (VINS = 2500 VRMS)
UL E78996 approved
Major Ratings and Characteristics
TO-220 FULLPAK
Capacitive input filter TA = 55°C, TJ = 125°C, 13.5 17 A
common heatsink of 1°C/W
Output Current in Typical Applications
Applications Single-phase Bridge Three-phase Bridge Units
IT(AV) Sinusoidal 10 A
waveform
IRMS 16 A
VRRM/
VDRM up to 1600 V
ITSM 200 A
VT@ 10 A, TJ = 25°C 1.4 V
dv/dt 500 V/µs
di/dt 150 A/µs
TJrange - 40 to 125 °C
Characteristics 16TTS..FP Units
Package Outline
2
16TTS..FP SAFE
IR
Series
Preliminary Data Sheet I2147 rev. C 03/99
www.irf.com
Part Number
VRRM, maximum VDRM , maximum IRRM/IDRM
peak reverse voltage peak direct voltage 125°C
VVmA
16TTS08FP 800 800 10
16TTS12FP 1200 1200
16TTS16FP 1600 1600
V oltage Ratings
IT(AV) Max. Average On-state Current 10 A @ TC = 95° C, 180° conduction half sine wave
IRMS Max. RMS On-state Current 16
ITSM Max. Peak One Cycle Non-Repetitive 170 10ms Sine pulse, rated VRRM
applied
Surge Current 200 10ms Sine pulse, no voltage reapplied
I2t Max. I2t for fusing 144 A2s 10ms Sine pulse, rated VRRM
applied
200 10ms Sine pulse, no voltage reapplied
I2√t Max. I2√t for fusing 2000 A2√s t = 0.1 to 10ms, no voltage reapplied
VTM Max. On-state Voltage Drop 1.4 V @ 10A, TJ = 25°C
rtOn-state Slope Resistance 24.0 mΩTJ = 125°C
VT(TO) Threshold Voltage 1.1 V
IRM/IDM Max.Reverse and Direct 0.5 mA TJ = 25 °C
Leakage Current 10 TJ = 125 °C
IH Holding Current Typ. Max. Anode Supply = 6V, Resistive load, Initial IT=1A
-- 100 mA 16TTS08FP, 16TTS12FP
100 150 16TTS16FP
ILMax. Latching Current 200 mA Anode Supply = 6V, Resistive load
dv/dt Max. Rate of Rise of off-state Voltage 500 V/µs
di/dt Max. Rate of Rise of turned-on Current 150 A/µs
Absolute Maximum Ratings
Parameters 16TTS..FP Units Conditions
VR = rated VRRM/ VDRM
3
16TTS..FP SAFE
IR
Series
Preliminary Data Sheet I2147 rev. C 03/99
www.irf.com
Triggering
PGM Max. peak Gate Power 8. 0 W
PG(AV) Max. average Gate Power 2.0
+ IGM Max. paek positive Gate Current 1 .5 A
- VGM Max. paek negative Gate Voltage 1 0 V
IGT Max. required DC Gate Current 9 0 m A Anode supply = 6V, resistive load, TJ = - 10°C
to trigger 6 0 Anode supply = 6V, resistive load, TJ = 25°C
3 5 Anode supply = 6V, resistive load, TJ = 125°C
VGT Max. required DC Gate Voltage 3.0 V Anode supply = 6V, resistive load, TJ = - 10°C
to trigger 2.0 Anode supply = 6V, resistive load, TJ = 25°C
1.0 Anode supply = 6V, resistive load, TJ = 125°C
VGD Max. DC Gate Voltage not to trigger 0.2 TJ = 125°C, VDRM = rated value
IGD Max. DC Gate Current not to trigger 2.0 mA TJ = 125°C, VDRM = rated value
Parameters 16TTS..FP Units Conditions
Switching
Parameters 16TTS..FP Units Conditions
tgt Typical turn-on time 0.9 µs TJ = 25°C
trr Typical reverse recovery time 4 TJ = 125°C
tqTypical turn-off time 110
TJMax. Junction Temperature Range - 40 to 125 °C
Tstg Max. Storage Temperature Range - 40 to 125
RthJC Max. Thermal Resistance Junction 1.5 °C/W DC operation
to Case
RthJA Max. Thermal Resistance Junction 62
to Ambient
RthCS Typ. Thermal Resistance Case 1.5 Mounting surface, smooth and greased
to Heatsink
wt Approximate Weight 2 (0.07) g (oz.)
T Mounting Torque Min. 6 (5)
Max. 12 (10)
Case Style TO-220 FULLPAK (94/V0)
Thermal-Mechanical Specifications
Parameters 16TTS..FP Units Conditions
Kg-cm
(Ibf-in)
4
16TTS..FP SAFE
IR
Series
Preliminary Data Sheet I2147 rev. C 03/99
www.irf.com
Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics
Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
80
90
100
110
120
130
024681012
30°60° 90° 120° 180°
Maximum Allowable C ase Tempera ture (°C)
Con ducti on Angle
Ave rage On -st ate Curre nt (A)
16TTS..FP Series
R (DC) = 1.5 °C/W
thJC
80
90
100
110
120
130
0 2 4 6 8 10 12 14 16 18
DC
30°60°90°120°180°
Av erag e O n -st a te Cur ren t (A)
Maximum Allowa b le Cas e Temp er a ture (°C)
Cond uction Peri od
1 6 TTS. .FP Se r ie s
R (DC) = 1.5 °C/W
thJC
0
2
4
6
8
10
12
14
16
18
024681012
RMS Lim it
Conduction Angl e
Maximum Average On-state Pow er Loss (W)
Ave ra g e On-state C ur r en t ( A)
180°
120°
90°
60°
30°
16 TTS..FP Series
T = 125 °C
J
0
5
10
15
20
25
0481216
DC
180°
120°
90°
60°
30°
RMS Lim it
Con duct ion Peri o d
Maxi mum A ve rage On-state Powe r Loss (W)
Average On-state Current (A)
16TTS..FP Series
T = 125°C
J
80
100
120
140
160
180
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
At An y Ra ted Load C ondition An d Wit h
Rated V Applied Following Surge.
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
RRM J
Peak Hal f Si ne Wave On-state Current (A)
16TTS..FP Seri es
80
100
120
140
160
180
200
0.01 0.1 1
Pulse Train Duratio n (s)
Ma ximum No n Repetitive Su rge Cu rren t
Peak Hal f Sine Wave Forward Current (A )
Versus P ulse Tra in Du rat i on.
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
J
RRM
16TTS..FP Series
5
16TTS..FP SAFE
IR
Series
Preliminary Data Sheet I2147 rev. C 03/99
www.irf.com
Fig. 7 - On-state Voltage Drop Characteristics
Fig. 9 - Gate Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristics
1
10
100
1000
012345
T = 2 5°C
J
Instantan eous On-state Cu rrent (A)
Ins ta n ta n eou s On -sta te Voltag e (V)
T = 125°C
J
16 TTS..FP Series
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1 10
Square Wave Pulse Durat ion (s)
St ea d y State V a lu e
(DC Ope ra t ion )
Single Pulse
thJC
Transient Thermal Impedance Z (°C/W)
1 6 TTS..FP Se r ie s
D = 0.5 0
D = 0.3 3
D = 0.2 5
D = 0.1 7
D = 0.0 8
0.1
1
10
100
0.001 0.01 0.1 1 10 100
(b)
(a)
Rectangular gate puls e
(4) (3) (2) (1)
Instantaneous Gate C urren t (A)
Instantaneou s Gat e Vol tage (V)
TJ = 25 °C
TJ = 125 °C
b )Re commended lo ad line for
VGD
IGD
Freq ue n cy L imited b y PG(AV)
a)Recomm ended load l ine for
r ated di/dt: 10 V , 20 ohms
tr = 0.5 µs, tp >= 6 µs
<= 3 0% rated di /dt: 10 V , 65 ohms
tr = 1 µs, tp >= 6 µs
(1) P GM = 40 , tp = 1 ms
(2) PG M = 20 W, tp = 2 ms
(3) PGM = 8 W, t p = 5 ms
(4) P GM = 4 W, tp = 10 ms
TJ = -1 0 °C
16TTS. .FP Se r ies
6
16TTS..FP SAFE
IR
Series
Preliminary Data Sheet I2147 rev. C 03/99
www.irf.com
Outline Table
16 T T S 16 FP
Device Code
1 54
3
1- Current Rating, RMS value
2- Circuit Configuration:
T = Single Thyristor
3- Package:
T = TO-220AC
4- Type of Silicon:
S = Converter Grade
5- Voltage code: Code x 100 = VRRM
6- TO-220 FULLPAK
Ordering Information Table
08 = 800V
12 = 1200V
16 = 1600V
(G) 3
2
(A)
1 (K)
62
5°± 0.5°
3.1
3.3
13.5
13.7
R0.5
R0.7 (2 PLACES)
3.1
HO LE ø 3. 4
10.4
0.7
4.6
5°± 0.5°
4.8
0.9
2. 54 TYP.
10.6
16.4
16.0
3.7
7.1
0.48
2.85
2.8
1.4 1.15
15.4
3.2
6.7
15.8
1.05
1.3
0.44
2.65
2.6
TYP.
10°
2.54
TYP.
Dimensions in millimeters (and inches)
7
16TTS..FP SAFE
IR
Series
Preliminary Data Sheet I2147 rev. C 03/99
www.irf.com
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http://www.irf.com Fax-On-Demand: +44 1883 733420 Data and specifications subject to change without notice.
