WBE D MM 8193187 GOOO4Ib 230 MSNLB BESEMEFABL= > J DISTRIBUTED BASE TECHNOLOGY DIE z. DESIGNED AND DIFFUSED BY SEMEFAB Sa , 25-0 G175 chip family T3501 The G175 chip family is an NPN bipolar multi- epitaxial planar transistor using SEMEFABS new ADVANCED DISTRIBUTED BASE TECHNOLOGY for improved performance over full temperature range. e@ HIGH CURRENT UP TO 20 AMPS = HIGH VOLTAGE - UP TO 1000 VOLTS MECHANICAL DATA DIE SIZE = 126 x 126 mil = METALIZATION: Ti -Al @ VERY FAST SWITCHING (t, = 40 ns) Bock THING, Ag FRONT METAL THICKNESS 5zm @ IMPROVED PERFORMANCE OVER FULL BACK METALTHICKNESS -0-6um TEMPERATURE RANGE. PASSIVATION. ~pLVAPOX HIGH GAIN AT LOW TEMPERATURES BONDPADSIZE: Emitter -16 x 33mils ~ FAST SWITCHING AT HIGH TEMPERATURES * S1POS pecalvation optional TYPICAL CHARACTERISTICS G575A G675A G375A G275A G975A G875A G875DE | Unit Veeo 200 250 400 550 650 850 1000 Vv Vee 80 120 200 2756 325 500 550 Vv I 20 15 12 10 7 4 4 A Similar to BUL53B | BUL53A BUL52B} BUL52A PROBED ELECTRICAL CHARACTERISTICS (T, = 25C) Parameter Test Conditions Type Min. Typ. Max. | Unit BVcen Collector-emitter lL=1mA 1,=0 G875DE 550 Vv breakdown voltage G875A 500 Vv G975A 325 Vv G275A 263 Vv G375A 175 v G675A 120 Vv G575A 75 Vv lees Collector cut-off current At specified BV ico ALL 1:0 mA leso Emitter cut-off current Veg=t1V 1,=0 ALL 1:0 mA hee DC current gain IL=1A Vee =4V ALL 40 90 _ Vegisan. Collector-emitter L=1A 1,=0-1A ALL 0-15 V saturation voltage 14