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FDMS86581_F085 N-Channel PowerTrench(R) MOSFET 60 V, 30 A, 15 m Features Typical RDS(on) = 12.5 m at VGS = 10V, ID = 30 A Typical Qg(tot) = 13 nC at VGS = 10V, ID = 25 A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Electronic Steering For current package drawing, please refer to the Fairchild web site at https://www.fairchildsemi.com/packagedrawings/PQ/ PQFN08M.pdf Integrated Starter/Alternator Distributed Power Architectures and VRM Primary Switch for 12V Systems MOSFET Maximum Ratings TJ = 25C unless otherwise noted. Symbol VDSS Drain-to-Source Voltage VGS ID EAS PD Parameter Ratings 60 Units V 20 V Gate-to-Source Voltage Drain Current - Continuous (VGS=10) (Note 1) TC = 25C 30 Pulsed Drain Current TC = 25C See Figure 4 Single Pulse Avalanche Energy (Note 2) 13.5 Power Dissipation Derate Above 25oC TJ, TSTG Operating and Storage Temperature RJC Thermal Resistance, Junction to Case RJA Maximum Thermal Resistance, Junction to Ambient A mJ 50 W 0.33 W/oC -55 to + 175 oC 3 oC/W 50 oC/W (Note 3) Notes: 1: Current is limited by bondwire configuration. 2: Starting TJ = 25C, L = 40uH, IAS = 26A, VDD = 60V during inductor charging and VDD = 0V during time in avalanche. 3: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design, while RJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. Package Marking and Ordering Information Device Marking FDMS86581 Device FDMS86581_F085 (c)2016 Fairchild Semiconductor Corporation FDMS86581_F085 Rev. 1.0 Package Power56 Reel Size 13" 1 Tape Width 12mm Quantity 3000units www.fairchildsemi.com FDMS86581_F085 N-Channel PowerTrench(R) MOSFET July 2016 Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS Drain-to-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Leakage Current ID = 250A, VGS = 0V VDS = 60V, VGS = 0V 60 - - V - - 1 A - - 1 mA - - 100 nA TJ = 25oC TJ = 175oC (Note 4) VGS = 20V On Characteristics VGS(th) RDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250A ID = 30A, VGS= 10V 2.0 2.7 4.0 V - 12.5 15.0 m - 25.1 30.1 m TJ = 25oC TJ = 175oC (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance f = 1MHz Qg(ToT) Total Gate Charge VGS = 0 to 10V Qg(th) Threshold Gate Charge VGS = 0 to 2V - 2 - nC Qgs Gate-to-Source Gate Charge - 4 - nC Qgd Gate-to-Drain "Miller" Charge - 3 - nC ns VDS = 30V, VGS = 0V, f = 1MHz VDD = 30V ID = 25A - 881 - pF - 281 - pF - 15 - pF - 3.1 - - 13 19 nC Switching Characteristics ton Turn-On Time - - 20 td(on) Turn-On Delay - 9 - ns tr Rise Time - 5 - ns td(off) Turn-Off Delay - 15 - ns tf Fall Time - 4 - ns toff Turn-Off Time - - 28 ns V VDD = 30V, ID = 30A, VGS = 10V, RGEN = 6 Drain-Source Diode Characteristics VSD Source-to-Drain Diode Voltage trr Reverse-Recovery Time Qrr Reverse-Recovery Charge ISD =30A, VGS = 0V - - 1.25 ISD = 15A, VGS = 0V - - 1.2 V IF = 30A, dISD/dt = 100A/s VDD = 48V - 37 55 ns - 22 33 nC Note: 4: The maximum value is specified by design at TJ = 175C. Product is not tested to this condition in production. (c)2016 Fairchild Semiconductor Corporation FDMS86581_F085 Rev. 1.0 2 www.fairchildsemi.com FDMS86581_F085 N-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted. 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 50 1.2 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) VGS = 10V CURRENT LIMITED BY SILICON 40 CURRENT LIMITED BY PACKAGE 30 20 10 0 175 25 50 75 100 125 150 175 TC, CASE TEMPERATURE(oC) 200 Figure 2. Maximum Continuous Drain Current vs. Case Temperature Figure 1. Normalized Power Dissipation vs. Case Temperature NORMALIZED THERMAL IMPEDANCE, ZJC 2 1 0.1 DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC SINGLE PULSE 0.01 -5 10 -4 10 -3 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 1000 TC = 25oC VGS = 10V FOR TEMPERATURES IDM, PEAK CURRENT (A) ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 175 - TC I = I25 150 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 0 10 1 10 Figure 4. Peak Current Capability (c)2016 Fairchild Semiconductor Corporation FDMS86581_F085 Rev. 1.0 3 www.fairchildsemi.com FDMS86581_F085 N-Channel PowerTrench(R) MOSFET Typical Characteristics 100 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 2000 1000 100 10 100us OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 SINGLE PULSE TJ = MAX RATED TC = 25oC 0.1 1ms 10ms 100ms 0.01 0.1 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 500 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 100 60 40 20 0 TJ = 25oC TJ = -55oC 3 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 80 60 0.1 1 10 VGS = 0 V TJ = 175 oC TJ = 25 oC 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 8. Forward Diode Characteristics 100 VGS 15V Top 10V 8V 7V 6V 5.5V 5V Bottom ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 250s PULSE WIDTH Tj=25oC 0.01 10 0.1 0.0 10 Figure 7. Transfer Characteristics 100 1 0.001 Figure 6. Unclamped Inductive Switching Capability VDD = 5V TJ = 175oC STARTING TJ = 150oC NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 PULSE DURATION = 250s DUTY CYCLE = 0.5% MAX 80 STARTING TJ = 25oC 10 tAV, TIME IN AVALANCHE (ms) Figure 5. Forward Bias Safe Operating Area 100 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 40 20 0 250s PULSE WIDTH Tj=175oC 80 60 VGS 15V Top 10V 8V 7V 6V 5.5V 5V Bottom 40 20 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 0 Figure 9. Saturation Characteristics (c)2016 Fairchild Semiconductor Corporation FDMS86581_F085 Rev. 1.0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 Figure 10. Saturation Characteristics 4 www.fairchildsemi.com FDMS86581_F085 N-Channel PowerTrench(R) MOSFET Typical Characteristics NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) 140 PULSE DURATION = 250s DUTY CYCLE = 0.5% MAX 120 ID = 30A 100 80 60 40 TJ = 175oC 20 0 5 TJ = 25oC 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 11. RDSON vs. Gate Voltage 1.5 1.0 ID = 30A VGS = 10V 0.5 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 12. Normalized RDSON vs. Junction Temperature 1.10 VGS = VDS ID = 250A 1.1 ID = 5mA 1.05 0.9 1.00 0.7 0.95 0.5 0.3 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 0.90 -80 200 Figure 13. Normalized Gate Threshold Voltage vs. Temperature VGS, GATE TO SOURCE VOLTAGE(V) 1000 Ciss 100 Coss 10 f = 1MHz VGS = 0V 1 0.1 Crss 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 Figure 15. Capacitance vs. Drain to Source Voltage (c)2016 Fairchild Semiconductor Corporation FDMS86581_F085 Rev. 1.0 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 14. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature 10000 CAPACITANCE (pF) PULSE DURATION = 250s DUTY CYCLE = 0.5% MAX 2.0 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 1.3 2.5 10 ID = 25A 8 VDD = 30V VDD = 36V VDD = 24V 6 4 2 0 0 2 4 6 8 10 Qg, GATE CHARGE(nC) 12 14 Figure 16. Gate Charge vs. Gate to Source Voltage 5 www.fairchildsemi.com FDMS86581_F085 N-Channel PowerTrench(R) MOSFET Typical Characteristics AccuPowerTM AttitudeEngineTM Awinda(R) AX-CAP(R)* BitSiCTM Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM DEUXPEED(R) Dual CoolTM EcoSPARK(R) EfficentMaxTM ESBCTM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FastvCoreTM FETBenchTM FPSTM F-PFSTM FRFET(R) Global Power ResourceSM GreenBridgeTM Green FPSTM Green FPSTM e-SeriesTM GmaxTM GTOTM IntelliMAXTM ISOPLANARTM Marking Small Speakers Sound Louder and BetterTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MicroPak2TM MillerDriveTM MotionMaxTM MotionGrid(R) MTi(R) MTx(R) MVN(R) mWSaver(R) OptoHiTTM OPTOLOGIC(R) OPTOPLANAR(R) (R)* (R) tm Power Supply WebDesignerTM PowerTrench(R) PowerXSTM Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM TM Saving our world, 1mW/W/kW at a timeTM SignalWiseTM SmartMaxTM SMART STARTTM Solutions for Your SuccessTM SPM(R) STEALTHTM SuperFET(R) SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOS(R) SyncFETTM Sync-LockTM TinyBoost(R) TinyBuck(R) TinyCalcTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM TranSiCTM TriFault DetectTM TRUECURRENT(R)* SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM VoltagePlusTM XSTM XsensTM (R) *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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