L30ESDxxxC3-2
SOT23
GENERAL DESCRIPTION
The L30ESD5V0C3-2~L30ESD24VC3-2 are a dual voltage
suppressor designed to protect components which are connected
to data and transmission lines against Electro Static Discharge
(ESD).
It clamps the voltage just above the logic level supply for positive
transients , and to a diode drop below ground for negative
transients.
It can work as bi-directional suppressor by connecting only pin 1
to 2.
FEATURES
2 Unidirectional ESD protection.
Max. peak pulse power : Ppp = 300W at tp = 8/20 us
Ultra low leakage current : IRM < 1uA @ VBR
ESD protection > 25KV per MIL-STD-883C, Method 3015-6:
Class 3.
IEC 61000-4-2, level 4 ( ESD ),>15KV(air) ;>8KV(contact ).
Ultra small SMD plastic packages
APPLICATION
Computers and peripherals
Communication system
Portable electronics
Cellular handsets and accessories.
MECHANICAL DATA
Case Material: "Green" molding compound UL flammability
classification 94V-0 (No Br.Sb, Cl)
Terminals: Lead Free Plating (Matte Tin Finish), solderable per
J-STD-002 and JESD22-B/02.
Moisture Sensitivity: Leve 1 per J-STD-020C
Component in accordance to RoHs 2002/95/EC
DUAL ESD
PROTECTION DIODES
STAND-OFF VOLTAGE - 5 ~24 Volts
POWER DISSIPATION - 300 WATTS
SEMICONDUCTOR
LITE-ON
REV. 5, Oct-2011, KSIR03
MAXIMUM RATINGS
(Tj= 25
unless otherwise noticed)
Rating Symbol Value Unit
Peak pulse Power ( 8/20us Waveform) P
PPM
300 W
Operating Junction Temperature Range T
J
-55 to + 125
Storage Temperature Range Tstg -55 to + 150
Soldering Temperature, t max = 10s T
L
260
All Dimensions in millimeter
SOT23
DIM. MIN. MAX.
A
C
D
E
F
G
H
B
0.89 1.20
0.51
0.30
0.085 0.18
3.042.75
1.20 1.60
0.85 1.05
1.70 2.10
0.0
2.75
S
L
I 0.1
2.10
0.6 typ.
0.35 0.65
1 2
3
G
F
I
Marking & Orientation
Marking: L30ESD5V0C3-2, XX XX: LT E5
L30ESD12VC3-2, XXX XX: VCC YM
L30ESD24VC3-2, XXX XX: VCO YM
1,2 Cathode
3 Ground
PIN ASSIGNMENT
RATING AND CHARACTERISTIC CURVES
L30ESDxxxC3-2
Parameter Symbol Conditions MIn Typ Max Unit
Reverse standoff voltage V
DRM
--- --- --- 5 V
Reverse leakage current I
RM
V
DRM
= 5V --- --- 1 uA
Peak pulse Current Ipp tp = 8/20us --- --- 17 A
Breakdown voltage V
BR
I
R
= 1 mA 6.4 --- 7.2 V
Diode capacitance CJ V
R
= 0 V , f = 1MHz --- 156 160 pF
Clamping Voltage V
CL
Ipp= 1 A, tp = 8/20us --- ---- 9.8 V
Clamping Voltage V
CL
Ipp= 15 A, tp = 8/20us --- ---- 20 V
ELECTRICAL CHARACTERISTICS
(Tj= 25
unless otherwise noticed)
Parameter Symbol Conditions MIn Typ Max Unit
Reverse standoff voltage V
DRM
--- --- --- 12 V
Reverse standoff voltage I
RM
V
DRM
= 12 V ---
--- 1
uA
Peak pulse Current Ipp tp = 8/20us ---
--- 12
A
Breakdown voltage V
BR
I
R
= 1 mA 14.2 --- 15.8 V
Diode capacitance CJ VR = 0 V , f = 1MHz --- 78 100 pF
Clamping Voltage V
CL
Ipp= 1 A, tp = 8/20us --- --- 19 V
Clamping Voltage V
CL
I
pp
= 12 A, tp = 8/20us --- --- 25 V
Parameter Symbol Conditions MIn Typ Max Unit
Reverse standoff voltage V
DRM
--- --- --- 24 V
Reverse leakage current I
RM
V
DRM
= 24V --- --- 1 uA
Peak pulse Current Ipp tp = 8/20us --- --- 4 A
Breakdown voltage V
BR
I
R
= 1 mA 26.7 --- 29.6 V
Diode capacitance CJ V
R
= 0 V , f = 1MHz --- 30 60 pF
Clamping Voltage V
CL
Ipp= 1 A, tp = 8/20us --- --- 36 V
Clamping Voltage V
CL
Ipp= 4 A, tp =8/20us --- --- 43 V
L30ESD5V0C3-2
L30ESD12VC3-2
L30ESD24VC3-2
0
20
40
60
80
100
120
140
160
180
0.0 1.0 2.0 3.0 4.0 5.0
10
100
1000
10000
1 10 100 1000 10000
0
0.4
0.8
1.2
0 25 50 75 100 125
Pulse Time (us)
0
40
80
120
0 10 20 30 40
Time (us)
Figure 1. 8/20 us pulse waveform according to IEC 61000-4-5
Percent of Peak Pulse Current
(%)
Figure 2. ESD pulse waveform according to IEC 61000-4-2
Time (ns)
Figure 3. Power Dissipation versus Pulse Time
Ppp / Ppp (25 )
Figure 4. Peak pulse power versus T
J
10%
90%
100%
50% Ipp: 20us
100% Ipp: 8us
Junction Temperature ( )
T
J
=25 , tp (us) = 8/20 us
exponentially decay waveform
e
-1
30 ns
60 ns
tr = 0.7 ~1 ns
Percent of Peak Pulse Current
%
Peak pulse Powe
r (W)
0.1
1.0
10.0
0 30 60 90 120 150
Figure 6. Reverse Leakage Current versus T
J
Junction Temperature ( )
IR / IR (25 )
Figure 5. Typical Junction Capactiance
Capacitance (pF)
Reverse Voltage (V)
T
J
=25 , f=1MHz, Vosc=100 mV
5V
12V
24V
RATING AND CHARACTERISTIC CURVES
L30ESDxxxC3-2
Figure 8. Clamped +8 kV ESD voltage waveform
+/-8KV
ESD Contact
discharge V (i/o)
I/O1
Figure 7. ESD Test Configuration
Figure 9. Clamped -8 kV ESD voltage waveform
V (i/o)
V (i/o)
L30ESD5V0C3-2
L30ESD12VC3-2
L30ESD24VC3-2
V (i/o)
V (i/o)
Figure 10. Clamped +8 kV ESD voltage
waveform
Figure 11. Clamped -8 kV ESD voltage
waveform
Figure 12. Clamped +8 kV ESD voltage
waveform
Figure 13. Clamped -8 kV ESD voltage
waveform
V (i/o)
V (i/o)
RATING AND CHARACTERISTIC CURVES
L30ESDxxxC3-2
Legal Disclaimer Notice
L30ESDxxxC3-2
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