IPB144N12N3 G
IPI147N12N3 G IPP147N12N3 G
"%&$!"#™3 Power-Transistor
Features
R( 492 ??6=?@ C>2 ==6G6=
R I46==6?E82 E6492 C86IR;I"\[#AC@ 5F4E!) '
R/6CJ=@ H@ ?C6D:DE2 ?46R;I"\[#
R U @ A6C2 E:?8E6>A6C2 EFC6
R*3 7C66=62 5A=2 E:?8, @ # -4@ >A=:2 ?E
R+ F2 =:7:652 44@ C5:?8E@ % )#7@ CE2 C86E2 AA=:42 E:@ ?
R$562 =7@ C9:897C6BF6?4JDH:E49:?82 ?5DJ?49C@ ?@ FDC64E:7:42 E:@ ?
R# 2 =@ 86?7C662 44@ C5:?8E@ $
Maximum ratings, 2 ETW U F?=6DD@ E96CH:D6DA64:7:65
Parameter Symbol Conditions Unit
@ ?E:?F@ FD5C2 :?4FCC6?E I;T7 U
RaUA7 & 0 -. 7
T9 U ,)
*F=D655C2 :?4FCC6?E
*# I;$]bY`R
I; V;I /
Qi'Qt W D
TW$ZNe U
**,
G2 =2 ?4966?6C8JD:?8=6AF=D6 E7I I; R>I "1( ZA
" 2 E6D@ FC46G@ =E2 86+# V>I r*( K
*@ H6C5:DD:A2 E:@ ? Pa\a T9 U )(/ L
) A6C2 E:?82 ?5DE@ C2 86E6>A6C2 EFC6 TWT`aT U
$ 4=:>2 E:442 E68@ CJ $( $
JWZNe U 2 ?55FEJ4J4=6 7@ C/8D /
Value
)#% - . 2 ?5% -
*#D667:8FC6
V;I )*( K
R - @ ?>2 I ),&/ Z"
I;-. 7
Product Summary
Type $* ( ( " $*$ ( ( " $* * ( ( "
Package F>%JE*.+%+ F>%JE*.*%+ F>%JE**(%+
Marking ),,D)*D ),/D)*D ),/D)*D
, 6G A2 86
IPB144N12N3 G
IPI147N12N3 G IPP147N12N3 G
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
.96C>2 =C6D:DE2 ?46;F?4E:@ ?42 D6 RaUA9 % % )&, B'L
RaUA7 >:?:>2 =7@ @ EAC:?E
4> 4@ @ =:?82 C62 ,# % % ,(
Electrical characteristics, 2 ETW U F?=6DD@ E96CH:D6DA64:7:65
Static characteristics
C2 :?D@ FC463 C62 <5@ H?G@ =E2 86 V"8H#;II V>I / I; > )*( % % K
" 2 E6E9C6D9@ =5G@ =E2 86 V>I"aU# V;I5V>II; W *+,
16C@ 82 E6G@ =E2 865C2 :?4FCC6?E I;II V;I /V>I /
TW U % (&) ) s7
V;I / V>I /
TW U % )( )((
" 2 E6D@ FC46=62 <2 864FCC6?E I>II V>I / V;I / % ) )(( [7
C2 :?D@ FC46@ ?DE2 E6C6D:DE2 ?46 R;I"\[# V>I / I;
"JE*.+# % )*&+ ),&, Z"
V>I / I;
.) .) % )*&. ),&/
" 2 E6C6D:DE2 ?46 R>% )&* % "
J_N[`P\[QbPaN[PR gS`
hV;Ih6*hI;hR;I"\[#ZNe
I; +) .* % I
Values
,# 6G:46@ ? >>I >>I >>6A@ IJ* !, H:E9 4>
*@ ?6=2 J6C W >E9:4<4@ AA6C2 C62 7@ C5C2 :?
4@ ??64E:@ ?* :DG6CE:42 =:?DE:==2 :C
.96C>2 =C6D:DE2 ?46;F?4E:@ ?
2 >3 :6?E
, 6G A2 86
IPB144N12N3 G
IPI147N12N3 G IPP147N12N3 G
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
$?AFE42 A2 4:E2 ?46 CV`` % *,*( +**( ]=
) FEAFE42 A2 4:E2 ?46 C\`` % +(, ,(,
, 6G6CD6EC2 ?D76C42 A2 4:E2 ?46 C_`` % )/ %
.FC?@ ?56=2 JE:>6 tQ"\[# % ). % [`
, :D6E:>6 t_% 1 %
.FC?@ 7756=2 JE:>6 tQ"\SS# % *, %
!2 ==E:>6 tS% , %
" 2 E6 92 C
T
6 92 C2 4E6C:DE:4D
-#
" 2 E6E@ D@ FC46492 C86 QT` % )+ % [9
" 2 E6E@ 5C2 :?492 C86 QTQ % 1 %
-H:E49:?8492 C86 Q`d % )- %
" 2 E6492 C86E@ E2 = QT% +/ ,1
" 2 E6A=2 E62 FG@ =E2 86 V]YNaRNb % -&- % K
) FEAFE492 C86 Q\`` V;; /V>I / % ,* -- [9
Reverse Diode
:@ 564@ ?E:?@ FD7@ CH2 C54FCC6?E II% % -. 7
:@ 56AF=D64FCC6?E II$]bY`R % % **,
:@ 567@ CH2 C5G@ =E2 86 VI; V>I /I=
TW U % ) )&* K
, 6G6CD6C64@ G6CJE:>6 t__ % 1) [`
, 6G6CD6C64@ G6CJ492 C86 Q__ % *-1 % [9
-#- 667:8FC6 7@ C82 E6492 C86A2 C2 >6E6C567:?:E:@ ?
VH / I=5II
Qi='Qt W D
T9 U
Values
V>I /V;I /
f ' # K
V;; / V>I /
I; R> "
V;; / I;
V>I E@ /
, 6G A2 86
IPB144N12N3 G
IPI147N12N3 G IPP147N12N3 G
1 Power dissipation 2 Drain current
Pa\a5S"T9#I;5S"T9V>I" /
3 Safe operating area 4 Max. transient thermal impedance
I;5S"V;IT9 U D5( ZaUA95S"t]#
A2 C2 >6E6Ct]A2 C2 >6E6CD5t]'T
D:?8=6AF=D6
(&()
(&(*
(&(-
(&)
(&*
(&-
100
10-1
10-2
10-3
10-4
10-5
101
100
10-1
10-2
tp[s]
ZthJC [K/W]
0
20
40
60
80
100
120
0 50 100 150 200
TC[°C]
Ptot [W]
0
10
20
30
40
50
60
0 50 100 150 200
TC[°C]
ID[A]
W D
W D
W D
>D
>D
;9
103
102
101
100
10-1
103
102
101
100
10-1
VDS [V]
ID[A]
, 6G A2 86
IPB144N12N3 G
IPI147N12N3 G IPP147N12N3 G
5 Typ. output characteristics 6 Typ. drain-source on resistance
I;5S"V;ITW U R;I"\[#5S"I;TW U
A2 C2 >6E6CV>I A2 C2 >6E6CV>I
7 Typ. transfer characteristics 8 Typ. forward transconductance
I;5S"V>ILV;Ih6*hI;hR;I"\[#ZNe gS`5S"I;TW U
A2 C2 >6E6CTW
/
/
/
/
0
5
10
15
20
25
0 20 40 60 80
ID[A]
RDS(on) [m ]
U
U
0
20
40
60
80
100
02468
VGS [V]
ID[A]
0
10
20
30
40
50
60
70
80
0 10 20 30 40 50 60
ID[A]
gfs [S]
/
/
/
/
/
/
/
/
0
50
100
150
200
012345
VDS [V]
ID[A]
, 6G A2 86
IPB144N12N3 G
IPI147N12N3 G IPP147N12N3 G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R;I"\[#5S"TWI; V>I / V>I"aU#5S"TWV>I5V;I
A2 C2 >6E6CI;
11 Typ. capacitances 12 Forward characteristics of reverse diode
C5S"V;IV>I /f ' # K I=5S"VI;#
A2 C2 >6E6CTW
af]
0
5
10
15
20
25
30
35
-60 -20 20 60 100 140 180
Tj[°C]
RDS(on) [m ]
W
W
0
0.5
1
1.5
2
2.5
3
3.5
4
-60 -20 20 60 100 140 180
Tj[°C]
VGS(th) [V]
9V``
9\``
9_``
104
103
102
101
0 20 40 60 80
VDS [V]
C[pF]
U
U
U
U
103
102
101
100
0 0.5 1 1.5 2
VSD [V]
IF[A]
, 6G A2 86
IPB144N12N3 G
IPI147N12N3 G IPP147N12N3 G
13 Avalanche characteristics 14 Typ. gate charge
I7I5S"t7KR>I "V>I5S"QTNaRI; AF=D65
A2 C2 >6E6CTW"`aN_a# A2 C2 >6E6CV;;
15 Drain-source breakdown voltage 16 Gate charge waveforms
V8H";II#5S"TWI; >
/
/
/
0
2
4
6
8
10
0 10 20 30 40
Qgate [nC]
VGS [V]
105
110
115
120
125
130
135
-60 -20 20 60 100 140 180
Tj[°C]
VBR(DSS) [V]
V
>I
Q
gate
V
T `"aU#
Q
T"aU#
Q
T `
Q
T Q
Q
`d
Q
g
U
U
U
103
102
101
100
102
101
100
tAV [µs]
IAS [A]
, 6G A2 86
IPB144N12N3 G
IPI147N12N3 G IPP147N12N3 G
PG-TO220-3: Outline
, 6G A2 86
IPB144N12N3 G
IPI147N12N3 G IPP147N12N3 G
PG-TO262-3-1 (I²PAK)
, 6G A2 86
IPB144N12N3 G
IPI147N12N3 G IPP147N12N3 G
PG-TO-263 (D²-Pak)
, 6G A2 86
IPB144N12N3 G
IPI147N12N3 G IPP147N12N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
4@ ?E2 4EE96?62 C6DE$?7:?6@ ?.649?@ =@ 8:6D) 77:46"ddd&V[SV[R\[&P\Z#&
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
, 6G A2 86
