FDP6030BL/FDB6030BL FDP6030BL/FDB6030BL N-Channel Logic Level PowerTrench MOSFET Features * 40 A, 30 V. RDS(ON) = 0.018 @ VGS = 10 V RDS(ON) = 0.024 @ VGS = 4.5 V. General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. * Critical DC electrical parameters specified at elevated temperature. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R DS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency. * High performance trench technology for extremely low RDS(ON). * Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. * 175C maximum junction temperature rating. D D G G D G TO-220 S FDP Series S TO-263AB S FDB Series Absolute Maximum Ratings Symbol TC = 25C unless otherwise noted FDP6030BL Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Maximum Drain Current - Continuous (Note 1) V V A 120 Total Power Dissipation @ TC = 25C Derate above 25C TJ, TSTG Units 30 20 40 - Pulsed PD FDB6030BL 60 -65 to +175 W W/C C 0.36 Operating and Storage Junction Temperature Range Thermal Characteristics RJC Thermal Resistance, Junction-to-Case 2.5 C/W RJA Thermal Resistance, Junction-to-Ambient 62.5 C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDB6030BL FDB6030BL 13'' 24mm 800 FDP6030BL FDP6030BL Tube N/A 45 2000 Semiconductor Components Industries, LLC. November-2017, Rev. 3 Publication Order Number: FDB6030BL/D Symbol TC = 25C unless otherwise noted Parameter Test Conditions DRAIN-SOURCE AVALANCHE RATINGS WDSS IAR Min Typ Max Units 150 mJ 40 A (Note 1) Single Pulse Drain-Source VDD = 15 V, ID = 40 A Avalanche Energy Maximum Drain-Source Avalnche Current Off Characteristics BVDSS BVDSS TJ IDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A Breakdown Voltage Temperature ID = 250 A, Referenced to 25C Coefficient Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V IGSSF Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse IGSSR On Characteristics 30 V mV/C 23 VGS = 20 V, VDS = 0 V 100 A nA VGS = -20 V, VDS = 0 V -100 nA 3 V mV/C 0.018 0.030 0.024 1 (Note 1) VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage ID(on) On-State Drain Current VGS = 10 V, ID = 20 A, VGS = 10 V, ID = 20 A, TJ = 125C VGS = 4.5 V,ID = 17 A VGS = 10 V, VDS = 10 V gFS Forward Transconductance VDS = 5 V, ID = 20 A Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance 1 1.6 -4.5 0.015 0.021 0.019 40 A 30 S Dynamic Characteristics VDS = 15 V, VGS = 0 V, f = 1.0 MHz Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) 1160 pF 250 pF 100 pF (Note 1) VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 9 17 ns 11 20 ns Turn-Off Delay Time 23 37 ns tf Turn-Off Fall Time 8 16 ns Qg Total Gate Charge 12 17 nC Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 15 V, ID = 20 A, VGS = 5 V 3.2 nC 3.7 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current (Note 1) VSD Drain-Source Diode Forward Voltage (Note 1) VGS = 0 V, IS = 20 A Note: 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% www.onsemi.com 2 0.95 40 A 1.2 V FDP6030BL/FDB6030BL Electrical Characteristics FDP6030BL/FDB6030BL Typical Characteristics 2.6 VGS = 10V 6.0V 5.0V 4.5V 70 60 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN-SOURCE CURRENT (A) 80 4.0V 50 40 3.5V 30 20 3.0V 10 2.4 2.2 VGS = 3.0V 2 1.8 3.5V 1.6 4.0V 1.4 5.0V 7.0V 1 10V 0.8 0 0 1 2 3 4 0 5 10 20 Figure 1. On-Region Characteristics. 40 50 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.06 1.8 ID = 20A VGS = 10V 1.6 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 30 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) 1.4 1.2 1 0.8 ID = 10 A 0.05 0.04 0.03 o TA = 125 C 0.02 o TA = 25 C 0.01 VGS = 0V 0.6 0 -50 -25 0 25 50 75 100 125 150 2 4 o TJ, JUNCTION TEMPERATURE ( C) 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 50 VGS = 0V o IS, REVERSE DRAIN CURRENT (A) TA = -55 C VDS = 5V o 25 C ID, DRAIN CURRENT (A) 4.5V 1.2 40 o 125 C 30 20 10 0 10 o TA = 125 C 1 o 25 C o -55 C 0.1 0.01 0.001 0.0001 1 2 3 4 5 0 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. Figure 5. Transfer Characteristics. www.onsemi.com 3 (continued) 1600 ID = 20A VDS = 5V 10V 8 f = 1 MHz VGS = 0 V 1400 15V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 6 4 2 1200 CISS 1000 800 600 400 COSS 200 CRSS 0 0 0 5 10 15 20 0 25 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics. 2500 1000 VGS = 10V SINGLE PULSE TC = 25 C RDS(ON) LIMIT POWER (W) 10s 100s 1ms o 100 SINGLE PULSE R JC =2.5C/W TC = 25C 2000 o RJC = 2.5 C/W 10ms 100ms DC 10 1500 1000 500 1 0.1 1 10 100 0 0.01 0.1 1 10 100 1,000 SINGLE PULSE TIME (mSEC) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE 1 TRANSIENT THERMAL RESISTANCE ID, DRAIN CURRENT (A) FDP6030BL/FDB6030BL Typical Characteristics D = 0.5 0.5 0.3 R JC (t) = r(t) * RJC R JC = 2.5 C/W 0.2 0.2 0.1 0.1 P(pk) 0.05 0.05 0.02 t1 0.03 0.01 0.02 0.01 0.01 t2 TJ - TC = P * RJC (t) Single Pulse Duty Cycle, D = t1 /t2 0.1 1 10 t1 ,TIME (ms) Figure 11. Transient Thermal Response Curve. www.onsemi.com 4 100 1000 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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