FDP6030BL/FDB6030BL
Publication Order Number:
FDB6030BL/D
2000 Semiconductor Components Industries, LLC.
November-2017, Rev. 3
FDP6030BL/FDB6030BL
N-Channel Logic Level PowerTrench MOSFET
Features
• 40 A, 30 V. RDS(ON) = 0.018 Ω @ VGS = 10 V
RDS(ON) = 0.024 Ω @ VGS = 4.5 V.
• Critical DC electrical parameters specified at elevated
temperature.
• Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient suppressor.
• High performance trench technology for
extremely low RDS(ON).
• 175°C maximum junction temperature rating.
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol Parameter FDP6030BL FDB6030BL Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ±20 V
IDMaximum Drain Current - Continuous (Note 1) 40
- Pulsed 120 A
Total Power Dissipation @ T C = 25°C60 W
PD
Derate above 25°C0.36 W/°C
TJ, TSTG Operating and Storage Junction Temperature Range -65 to +175 °C
Thermal Characteristics
RθJC Thermal R esistance, Junction-to-Case 2.5 °C/W
RθJA Thermal R esistance, Junction-to-Am bient 62.5 °C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
FDB6030BL FDB6030BL 13’’ 24mm 800
FDP6030BL FDP6030BL Tube N/A 45
S
D
G
S
GDTO-220
FDP Seri es
General Description
This N-Channel Logic Level MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable RDS(on)
specifications resulting in DC/DC power supply designs
with higher overall efficiency.
D
GSTO-263AB
FDB Seri es
FDP6030BL/FDB6030BL
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2
Electrical Characteristics TC = 25°C unless otherwise noted
S
y
mbol Parameter Test Conditions Min Typ Max Units
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
WDSS Single Pulse Drain-Source
Avalanche Energy VDD = 15 V, ID = 40 A 150 mJ
IAR Maximum Drain-Source Avalnche Current 40 A
Off Characteristics
BVDSS Drain-Source Breakdown Volta
g
eVGS = 0 V, ID = 250 µA30 V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient ID = 250 µA, Referenced to 25°C23 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA
IGSSF Gate-Body Leakage Current,
Forward VGS = 20 V, VDS = 0 V 100 nA
IGSSR Gate-Body Leakage Current,
Reverse VGS = -20 V, VDS = 0 V -100 nA
On Characteristics (Note 1)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA11.6 3 V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient ID = 250 µA, Referenced t o 25°C-4.5 mV/°C
RDS(on) Static Drain-Source
On-Resistance VGS = 10 V, ID = 20 A,
VGS = 10 V, ID = 20 A, TJ = 125°C
VGS = 4.5 V,ID = 17 A
0.015
0.021
0.019
0.018
0.030
0.024
Ω
ID(on) On-State Drain Current VGS = 10 V, VDS = 10 V 40 A
gFS Forward Transconductance VDS = 5 V, ID = 20 A 30 S
Dynamic Characteristics
Ciss Input Capacit ance 1160 pF
Coss Output Capacit ance 250 pF
Crss Reverse Transfer Capacitance
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
100 pF
Switching Characteristics (Note 1)
td(on) Turn-On Delay Ti m e 9 17 ns
trTurn-On Rise Time 11 20 ns
td(off) Turn-Of f Delay Time 23 37 ns
tfTurn-Off Fall Time
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω
816ns
QgTotal Gate Charge 12 17 nC
Qgs Gate-Source Charge 3.2 nC
Qgd Gate-Drain Charge
VDS = 15 V,
ID = 20 A, VGS = 5 V
3.7 nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current (Note 1) 40 A
VSD Drain-Source Diode Forward
Voltage VGS = 0 V, IS = 20 A (Note 1) 0.95 1.2 V
Note:
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FDP6030BL/FDB6030BL
Typical Characteristics
Figure 3. On-Resistance V ariation
with Temperature. Figure 4. On-Resistance V ariation
with Gate-to-Source V olt age.
Figure 5. T ransfer Characteristics. Figure 6. Body Diode Forward V olt age
V ariation with Source Current
and Temperature.
Figure 1. On-Region Characteristics. Figure 2. On-Resist ance V ariation
with Drain Current and Gate Voltage.
0
10
20
30
40
50
60
70
80
012345
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN-SOURCE CURRENT (A)
V
GS
= 10V
4.0V
5.0V
4.5V
6.0V
3.0V
3.5V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
0 1020304050
I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SO UR C E ON-R ESI STA N CE
V
GS
= 3.0V
10V
4.0V
3.5V
4.5V 5.0V
7.0V
0
0.01
0.02
0.03
0.04
0.05
0.06
246810
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= 10 A
T
A
= 125
o
C
T
A
= 25
o
C
0
10
20
30
40
50
12345
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
T
A
= -55
o
C25
o
C
125
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
V
SD
, BODY DIODE FO R W A RD V O LTAGE ( V )
I
S
, REVERSE DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
0.6
0.8
1
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 20A
V
GS
= 10V
V
GS
= 0V
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FDP6030BL/FDB6030BL
Typical Characteristics (continued)
Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics.
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
Figure 1 1. T ransient Thermal Response Curve.
0
200
400
600
800
1000
1200
1400
1600
0 5 10 15 20 25 30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C
ISS
C
OSS
C
RSS
f = 1 MHz
V
GS
= 0 V
1
10
100
1000
0.1 1 10 100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
θJC
= 2.5
o
C/W
T
C
= 25
o
C
DC
100ms
10ms 1ms
100
µ
s
10
µ
s
0.01 0.1 1 10 100 1000
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1
t ,TIME ( ms)
TRANSIENT THERMAL RESISTANCE
Single Pulse
D = 0.5
0.1
0.05
0.02
0.2
Duty Cycle, D = t /t
1 2
R ( t) = r(t) * R
R = 2.5 °C/W
θJC
θJC
θJC
T - T = P * R (t)
θ
JC
C
J
P(pk)
t
1
t
2
r(t), NORMALIZED EFFECTIVE
1
0.01
0
2
4
6
8
10
0 5 10 15 20 25
Q
g
, GATE CHARGE (nC)
V
GS
, GATE-SOUR CE VOLTAGE (V)
I
D
= 20A V
DS
= 5V 10V
15V
0.01 0.1 1 10 100 1,000
0
500
1000
1500
2000
2500
SINGLE PULSE TIME (mSEC)
POWER (W)
SINGLE PULSE
R =2.5°C/W
T = 25°C
θJC C
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