Data Sheet Shottky barrier diode RB548W Dimensions (Unit : mm) Land size figure (Unit : mm) 1.0 0.5 0.5 0.30.1 0.05 Features 1) Ultra small power mold type. (EMD3) 2) Low IR 3) High reliability. 0.7 1.60.2 0.15 0.05 0.6 0.6 EMD3 0.55 0.1 0.5 0.5 1.0 0.1 Construction Silicon epitaxial planar 0.7 (1) (2) 0.7 0 0.1 0.1Min 0.20.1 -0.05 1.60.2 0.80.1 (3) 1.3 Applications Low current rectification 0.70.1 Structure ROHM : EMD3 JEDEC : SOT-416 JEITA : SC-75A dot (year week factory) Taping specifications (Unit : mm) 1.550.1 1.5 0.1 00 2.00.05 0.30.1 8.00.2 00.1 1.80.2 1.80.1 5.50.2 3.50.05 1.750.1 4.00.1 0.50.1 0.90.2 Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz1cyc) (*1) Junction temperature Storage temperature Limits Symbol VR Io IFSM Tj Tstg Unit V mA mA C C 30 100 500 125 40 to 125 (*1) Rating of per diode Electrical characteristics (Ta=25C) Parameter Forward voltage Symbol VF Min. - Typ. - Max. 0.45 Unit V Reverse current IR - - 0.5 A www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 1/3 Conditions IF=10mA VR=10V 2011.04 - Rev.C Data Sheet RB548W 1000000 Ta=75 10 1 Ta=-25 Ta=25 0.1 0.01 Ta=75 10000 1000 Ta=25 100 Ta=-25 10 1 200 300 400 500 0 600 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 1 30 0 Ta=25 VR=10V n=30pcs 900 350 340 330 AVE:338.8mV 800 600 500 400 300 AVE:100.5nA 200 18 17 16 15 14 13 12 100 11 0 10 VF DISPERSION MAP AVE:15.94pF IR DISPERSION MAP Ct DISPERSION MAP 10 10 20 PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc Ifsm 15 8.3ms 10 AVE:3.90A 5 0 Ifsm 8.3ms 8.3ms 1cyc 5 Ifsm t 5 0 0 1 10 1 100 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS IFSM DISRESION MAP 0.1 1000 20 Ta=25 f=1MHz VR=0V n=10pcs 19 700 320 5 10 15 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 20 1000 Ta=25 IF=10mA n=30pcs REVERSE CURRENT:IR(nA) 0.02 Rth(j-a) Rth(j-c) 100 Mounted on epoxy board IF=10mA IM=1mA 1ms FORWARD POWER DISSIPATION:Pf(W) 0.08 D=1/2 DC REVERSE POWER DISSIPATION:PR (W) FORWARD VOLTAGE:VF(mV) 20 10 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 370 360 10 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 PEAK SURGE FORWARD CURRENT:IFSM(A) 0 PEAK SURGE FORWARD CURRENT:IFSM(A) f=1MH 100000 0.001 TRANSIENT THAERMAL IMPEDANCE:Rth (/W) 100 Ta=125 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125 100 REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) 1000 0.06 Sin(180) 0.04 0.02 time 0.015 0.01 Sin(180) 300us 10 0.001 0 0.1 10 1000 TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. D=1/2 DC 0.005 0 0 0.05 0.1 0.15 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 2/3 0.2 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 2011.04 - Rev.C Data Sheet RB548W 0.3 0A 0V Per diode 0.2 Io t T DC VR D=t/T VR=15V Tj=125 D=1/2 0.1 Sin(180) 0.2 Io 0A 0V Per diode AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.3 t T DC VR D=t/T VR=15V Tj=125 D=1/2 0.1 Sin(180) 0 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 0 25 50 75 100 125 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc) 3/3 2011.04 - Rev.C Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. R1120A