Data Sheet
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.rohm.com
© 2011 R
OHM Co
., Ltd.
All r
ights reser
v
ed.
Shottky barrier diode
RB548W
Applications
Dimensions
(Unit : mm)
Land size figure
(Unit : mm)
Low current rectification
Features
1) Ultra small power mold type. (EMD3)
2) Low I
R
3) High reliability.
Construction
Structure
Silicon epitaxial planar
Taping specifications
(Unit : mm)
Absolute maximum ratings
(Ta=25°C)
Symbol
Unit
V
R
V
Io
mA
I
FSM
mA
Tj
°C
Tstg
°C
Electrical characteristics
(Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
V
F
-
-
0.45
V
I
F
=10mA
I
R
-
-
0.5
μ
A
V
R
=10V
Reverse current
Conditions
(*1) Rating of per diode
Parameter
Forward voltage
Junction temperature
125
Storage temperature
40 to
125
Average rectified forward current (*1)
100
Forward current surge peak (60Hz
・
1cyc) (*1)
500
Parameter
Limits
Reverse voltage (DC)
30
EMD3
1.
0
0.
7
0.5
0.
5
0.
7
0.
7
0.
6
0.6
1.
3
ROHM : EMD3
JEITA : SC-75A
JEDEC : SOT-416
dot (year week factory)
(3)
1.6±0
.2
1.6±0.
2
1.0±
0.1
0.8±0.1
0.5
0.5
(2)
(1)
0.15±
0.05
0.7±0
.1
0.55±
0.1
0.1Min
0~
0.1
0.2±0.
1
-0.05
0.
3±
0.
1
0.
0
5
4.
0±0
.1
2.0
±0.
05
φ1
.
5
5±0
.
1
0
3.5±0
.05
1.75
±0.1
8.0±0
.2
φ0.5±0
.1
1.8±0
.2
0.3
±0.1
1.8±0
.1
5.5
±0.
2
0.9±0
.2
0~0
.1
φ
1.5
0.1
0
1/3
2011.04 - Rev.C
www
.rohm.com
© 201
1 ROHM Co., Ltd.
All rights reserved.
Data Sheet
RB548W
FORW
ARD VO
LTAG
E:
VF(mV)
VF-
IF CHAR
ACTE
RISTI
CS
FORWARD
CURRENT:IF(mA)
REVE
RS
E CURRE
NT:IR(nA)
REVER
SE
VOLT
AGE:V
R(V)
VR-I
R CH
ARA
CTERIS
TIC
S
CAPACITANCE BETWEEN
TERMIN
A
LS:Ct(pF)
REVE
RSE
VOL
TAGE:
VR(V
)
VR-
Ct
CHA
RACT
ERIS
TIC
S
VF
DIS
PER
SIO
N M
AP
FORWARD VOLTAGE
:VF(mV)
REVERSE CUR
RE
NT:I
R(
nA)
IR
DIS
PER
SIO
N M
AP
CAPAC
IT
ANCE
BET
WEEN
TERMINALS:Ct(pF)
Ct
DIS
PER
SIO
N MA
P
IFSM
DIS
RESIO
N MA
P
PEA
K SURGE
FORWARD CURRENT:IFSM(
A
)
PE
AK
SU
RG
E
FORWARD CURRENT:I
FS
M
(A)
NUMB
ER OF
CYCLES
IFSM-C
YCLE CH
ARACTE
RISTI
CS
PE
AK
SU
RG
E
FORWARD CURRENT:I
FS
M
(A)
TIME:
t(ms)
IF
SM-
t C
HA
RA
CTE
RI
STI
CS
TIME
:t(s)
Rth-t CH
ARACTE
RISTICS
TRANSIENT
THAERMAL IMPEDAN
CE:Rth (℃/W
)
FORWARD POWER
DISS
IPA
TION:
Pf(W)
AVE
RA
GE
R
E
CTI
FIE
D
FORWARD
CURRE
NT:Io(A)
Io-Pf
CHARACTE
RISTI
CS
REVE
RS
E P
OWER
DISSIP
ATIO
N:P
R
(W)
REVE
RSE
VOL
TAGE:
VR(V
)
VR-
P
R
CHARA
CTERISTI
CS
0.001
0.01
0.1
1
10
100
1000
0
100
200
30
0
400
500
600
1
10
100
1000
10000
100000
1000000
01
0
2
0
3
0
1
10
100
0
5
10
15
2
0
f=1MHz
320
330
340
350
360
370
Ta=25℃
IF=10mA
n=30pcs
0
100
200
300
400
500
600
700
800
900
1000
AVE:100.5nA
Ta=25℃
VR=10V
n=30pcs
10
11
12
13
14
15
16
17
18
19
20
AVE:15.94pF
Ta=25℃
f=1MHz
VR=0V
n=10pcs
0
5
10
15
20
AVE:3.90A
8.3ms
Ifs
m
1cyc
0
5
10
1
10
100
8.3ms
Ifs
m
1cy
c
8.3ms
0
5
10
1
10
100
t
Ifs
m
10
100
1000
0.001
0.1
10
1000
Rth(j-
a)
Rth(j-c)
1m
s
IM=
1mA
IF=10mA
300us
tim
e
Mounted on epoxy board
0
0.02
0.04
0.06
0.08
0.
1
0
0.05
0.1
0.15
0
.2
0
0.005
0.01
0.015
0.02
0
5
10
15
20
25
30
AVE:338.8mV
Ta=-25℃
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
Ta=125℃
Ta=25℃
Ta=75℃
DC
D=1
/2
Sin(
θ=180)
Sin(θ
=180)
DC
D=1/2
2/3
2011.04 - Rev.C
www
.rohm.com
© 201
1 ROHM Co., Ltd.
All rights reserved.
Data Sheet
RB548W
AM
BIENT
TEMPE
RATURE
:Ta(
℃)
Derating Curve゙(Io-Ta)
AVER
AG
E REC
TIFI
ED
FORWARD CURRE
N
T:Io(A)
AV
ERA
GE R
ECT
IFI
ED
FORWARD CURRENT:
I
o(A)
CASE
TEMPARA
TURE:Tc(
℃)
Deratin
g
C
urve゙(Io-Tc)
0
0.1
0.2
0.3
0
25
50
75
100
125
Per diode
Sin(θ
=18
0)
D=1
/2
DC
0
0.1
0.2
0.3
0
25
50
75
100
125
Per diode
Sin(
θ=180)
D=1
/2
DC
T
Tj=125℃
D=t/T
t
VR
Io
VR=15V
0A
0V
T
Tj=125℃
D=t/T
t
VR
Io
VR=15V
0A
0V
3/3
2011.04 - Rev.C
R1
120
A
www
.rohm.com
© 201
1 ROHM Co., Ltd.
All rights reserved.
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