MITSUBISHI THYRISTOR MODULES TM25DZ/CZ-24,-2H HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE TM25DZ/CZ-24,-2H Average on-state current ............ 25A Repetitive peak reverse voltage ........ 1200/1600V VDRM Repetitive peak off-state voltage ......... 1200/1600V DOUBLE ARMS Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 no t fo Re rN c o ew m m De e n sig d n * IT (AV) * VRRM * * * * APPLICATION DC motor control, NC equipment, AC motor control, Contactless switches, Electric furnace temperature control, Light dimmers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 93.5 (DZ) 80 K2 G 2 2-6.5 K2 G2 K1 26 13 A1K2 CR1 A2 CR2 K1 G 1 K1 G1 23 3-M5 (CZ) K2 G2 Tab # 110, t=0.5 A1 CR1 K1K2 A2 K1 G1 LABEL 30 9 CR2 21 23 6.5 16.5 Feb.1999 MITSUBISHI THYRISTOR MODULES TM25DZ/CZ-24,-2H HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol Voltage class Parameter 24 2H Unit Repetitive peak reverse voltage 1200 1600 V Non-repetitive peak reverse voltage 1350 1700 V VR (DC) DC reverse voltage 960 1280 V VDRM Repetitive peak off-state voltage 1200 1600 V VDSM Non-repetitive peak off-state voltage 1350 1700 V VD (DC) DC off-state voltage 960 1280 V no t fo Re rN c o ew m m De e n sig d n VRRM VRSM Symbol Conditions Ratings Unit 39 A Single-phase, half-wave 180 conduction, TC=87C 25 A Surge (non-repetitive) on-state current One half cycle at 60Hz, peak value 500 A I2t I2t for fusing Value for one cycle of surge current 1.0 x 103 A2s di/dt Critical rate of rise of on-state current VD=1/2VDRM, IG=0.5A, Tj=125C 100 A/s PGM Peak gate power dissipation 5.0 W PG (AV) Average gate power dissipation 0.5 W VFGM Peak gate forward voltage 10 V VRGM Peak gate reverse voltage 5.0 V IFGM Peak gate forward current 2.0 A Tj Junction temperature -40~+125 C Tstg Storage temperature -40~+125 C Viso Isolation voltage Parameter IT (RMS) RMS on-state current IT (AV) Average on-state current ITSM Charged part to case Main terminal screw M5 -- Mounting torque Mounting screw M6 -- Weight Typical value 2500 V 1.47~1.96 N*m 15~20 kg*cm 1.96~2.94 N*m 20~30 kg*cm 160 g ELECTRICAL CHARACTERISTICS Limits Symbol Test conditions Parameter Min. Typ. Max. Unit IRRM Repetitive peak reverse current Tj=125C, VRRM applied -- -- 10 mA IDRM Repetitive peak off-state current Tj=125C, VDRM applied -- -- 10 mA VTM On-state voltage Tj=125C, ITM=75A, instantaneous meas. -- -- 1.8 V dv/dt Critical rate of rise of off-state voltage Tj=125C, VD=2/3VDRM 500 -- -- V/s VGT Gate trigger voltage Tj=25C, VD=6V, RL=2 -- -- 3.0 V VGD Gate non-trigger voltage Tj=125C, VD=1/2VDRM 0.25 -- -- V IGT Gate trigger current Tj=25C, VD=6V, RL=2 10 -- 50 mA Rth (j-c) Thermal resistance Junction to case (per 1/2 module) -- -- 0.8 C/ W Rth (c-f) Contact thermal resistance Case to fin, conductive grease applied (per 1/2 module) -- -- 0.2 C/ W Insulation resistance Measured with a 500V megohmmeter between main terminal and case 10 -- -- M -- Feb.1999 MITSUBISHI THYRISTOR MODULES TM25DZ/CZ-24,-2H HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTIC 10 3 7 5 3 2 RATED SURGE (NON-REPETITIVE) ON-STATE CURRENT SURGE (NON-REPETITIVE) ON-STATE CURRENT (A) ON-STATE CURRENT (A) no t fo Re rN c o ew m m De e n sig d n 500 Tj=125C 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0.5 1.0 1.5 2.0 400 300 200 100 0 2.5 1 2 3 ON-STATE VOLTAGE (V) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 10 -3 2 3 5 7 10 -2 2 3 5 7 10 -12 3 5 7 10 0 TIME (s) MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (SINGLE PHASE HALFWAVE) LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (SINGLE PHASE HALFWAVE) 30 RESISTIVE, INDUCTIVE LOAD 130 180 120 90 60 =30 20 PER SINGLE ELEMENT 10 5 10 15 20 AVERAGE ON-STATE CURRENT (A) 25 PER SINGLE ELEMENT CASE TEMPERATURE (C) AVERAGE ON-STATE POWER DISSIPATION (W) 0.9 GATE CURRENT (mA) 40 0 TRANSIENT THERMAL IMPEDANCE (C/W) IFGM=2.0A GATE VOLTAGE (V) VFGM=10V 360 0 50 70100 MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 7 10 1 1.0 10 1 PGM=5.0W 7 5 VGT=3.0V PG(AV)= 3 0.50W 2 I GT = 10 0 50mA 7 5 Tj= 25C 3 2 VGD=0.25V 10 -1 7 5 410 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 4 50 20 30 CONDUCTION TIME (CYCLES AT 60Hz) GATE CHARACTERISTICS 4 3 2 5 7 10 120 360 110 RESISTIVE, INDUCTIVE LOAD 100 90 80 =30 0 5 10 60 90 120 180 15 20 25 AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI THYRISTOR MODULES TM25DZ/CZ-24,-2H HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (RECTANGULAR WAVE) 270 DC 180 130 PER SINGLE ELEMENT 120 90 40 60 30 30 20 360 10 PER SINGLE ELEMENT 0 0 8 16 RESISTIVE, INDUCTIVE LOAD 24 32 AVERAGE ON-STATE CURRENT (A) 120 CASE TEMPERATURE (C) AVERAGE ON-STATE POWER DISSIPATION (W) no t fo Re rN c o ew m m De e n sig d n 50 LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 360 110 RESISTIVE, INDUCTIVE LOAD 100 90 80 =30 60 90 180 270 DC 120 70 60 40 50 0 5 10 15 20 25 30 35 40 AVERAGE ON-STATE CURRENT (A) Feb.1999