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Optimum Technology Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
Functional Block Diagram
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Ordering Information
1
4
5
8
6
7
2
3
16
13
12
9
11
10
15
14
RF OUT
NC
RF IN
NC
NC
GND
GND
GND
GND
GND
GND
GND
GND
NC
NC
NC
RF2317
LINEAR CATV AMPLIFIER
The RF2317 is a general purpose, low-cost high-linearity RF amplifier IC. The device
is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transis-
tor (HBT) process, and has been designed for use as an easily cascadable 75Ω
gain block. The gain flatness of better than ±0.5dB from 50MHz to 1000MHz, and
the high linearity, make this part ideal for cable TV applications. Other applications
include IF and RF amplification in wireless voice and data communication products
operating in frequency bands up to 3GHz. The device is self-contained with 75Ω
input and output impedances and requires only two external DC biasing elements
to operate as specified.
Features
DC to 3.0GHz Operation
Internally Matched Input and
Output
15dB Small Signal Gain
4.9dB Noise Figure
+47dBm Output IP3
Single 9V to 12V Power Sup-
ply
Apllications
CATV Distribution Amplifiers
Cable Modems
Broadband Gain Blocks
Laser Diode Driver
Return Channel Amplifier
Base Stations
RF2317 Linear CATV Amplifier
RF2317 PCBA Fully Assembled Evaluation Board - 50Ω
RF2317 PCBA Fully Assembled Evaluation Board - 75Ω
Rev A19 DS050822
9
RoHS Compliant & Pb-Free Product
Package Style: CJ2BAT0
2 of 12
RF2317
Rev A19 DS050822
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Absolute Maximum Ratings
Parameter Rating Unit
Device Current 250 mA
Input RF Power +18 dBm
Output Load VSWR 20:1
Ambient Operating Temperature -40 to +85 °C
Storage Temperature -40 to +150 °C
Parameter Specification Unit Condition
Min. Typ. Max.
Overall (50Ω)T=+25°C , ICC =180mA, RC=10.2Ω,
50Ω System
Frequency Range DC 3000 MHz 3dB Bandwidth
Gain 13.5 14.3 15.0 dB
Noise Figure 4.9 dB From 100 MHz to 1000 MHz
Input VSWR 1.7:1 Appropriate values for the DC blocking capaci-
tors and bias inductor are required to maintain
this VSWR at the intended operating frequency
range.
Output VSWR 2.3:1 Appropriate values for the DC blocking capaci-
tors and bias inductor are required to maintain
this VSWR at the intended operating frequency
range.
Output IP3 +47 dBm At 100MHz
+37 +42 dBm At 500MHz
+37 dBm At 900MHz
Output IP2 +55 dBm F1=400MHz, F2=500MHz, FOUT=100MHz
Output P1dB +25.5 dBm At 100MHz
+24 dBm At 500MHz
+22 dBm At 900MHz
Reverse Isolation 19.5 dB
Thermal
ThetaJC 55 °C/W ICC=150mA, PDISS =1.2W, TAMB=85°C
Maximum Junction Temperature 150 °C
Mean Time To Failures 3100 years TAMB=+85°C
ThetaJC 58 °C/W ICC=180mA, PDISS =1.5W, TAMB=85°C
Maximum Junction Temperature 175 °C
Mean Time To Failures 380 years TAMB=+85°C
Power Supply (50Ω)
Device Voltage 8.5 V On pin 13, ICC =150mA
9.3 V On pin 13, ICC =180mA
Operating Current Range 100 180 200 mA Actual current determined by VCC and RC
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
3 of 12
RF2317
Rev A19 DS050822
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Parameter Specification Unit Condition
Min. Typ. Max.
Overall (75Ω)T=25°C, ICC =180mA, RC=14.3Ω,
75Ω System
Frequency Range DC 3000 MHz 3dB Bandwidth
Gain 15.0 dB
Noise Figure 4.8 dB From 100 MHz to 1000 MHz
Input VSWR 1.3:1 Appropriate values for the DC blocking capaci-
tors and bias inductor are required to maintain
this VSWR at the intended operating frequency
range.
Output VSWR 1.8:1 Appropriate values for the DC blocking capaci-
tors and bias inductor are required to maintain
this VSWR at the intended operating frequency
range.
Output IP3+49 dBm At 100MHz
+37 +43 dBm At 500MHz
+38 dBm At 900MHz
Output IP2+58 dBm F1=400MHz, F2=500MHz, FOUT=100MHz
Output P1dB +22 dBm At 100MHz
+22 dBm At 500MHz
+21 dBm At 900MHz
Reverse Isolation 19 dB
133 Channels 10dBmV per channel, flat, at the input of the
amplifier; ICC =150mA, VCC=10.4V
XMOD <-75 dBc At 55.25MHz
<-75 dBc At 331.25MHz
<-75 dBc At 547.25MHz
<-75 dBc At 853.25MHz
CTB -85 dBc At 55.25MHz
-85 dBc At 331.25MHz
-84 dBc At 547.25MHz
-83 dBc At 853.25MHz
CSO+1.25MHz -90 dBc At 55.25MHz
-72 dBc At 331.25MHz
-69 dBc At 853.25MHz
-64 dBc At 547.25MHz
CSO-1.25MHz -63 dBc At 55.25MHz
-65 dBc At 331.25MHz
-70 dBc At 547.25MHz
-90 dBc At 853.25MHz
4 of 12
RF2317
Rev A19 DS050822
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Parameter Specification Unit Condition
Min. Typ. Max.
133 Channels 10dBmV per channel, flat, at the input of the
amplifier; ICC =180mA, VCC=11.4V
XMOD <-75 dBc At 55.25MHz
<-75 dBc At 331.25MHz
<-75 dBc At 547.25MHz
<-75 dBc At 853.25MHz
CTB -89 dBc At 55.25MHz
-86 dBc At 331.25MHz
-86 dBc At 547.25MHz
-84 dBc At 853.25MHz
CSO+1.25MHz -89 dBc At 55.25MHz
-74 dBc At 331.25MHz
-69 dBc At 853.25MHz
-62 dBc At 547.25MHz
CSO-1.25MHz -63 dBc At 55.25MHz
-65 dBc At 331.25MHz
-71 dBc At 547.25MHz
-91 dBc At 853.25MHz
Power Supply (75Ω)
Device Voltage 8.3 V On pin 13, ICC =150mA
8.9 V On pin 13, ICC =180mA
Operating Current Range 100 180 200 mA Actual current determined by VCC and RC
5 of 12
RF2317
Rev A19 DS050822
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Package Drawing
Pin Function Description Interface Schematic
1NC
This pin is internally not connected.
2GND
Ground connection. Keep traces physically short and connect immediately
to ground plane for best performance. Each ground pin should have a via
to the ground plane.
3GND
Same as pin 2.
4RF IN
RF input pin. This pin is NOT internally DC blocked. A DC blocking capacitor,
suitable for the frequency of operation, should be used in most applica-
tions. DC coupling of the input is not allowed, because this will override the
internal feedback loop and cause temperature instability.
5NC
This pin is internally not connected.
6GND
Same as pin 2.
7GND
Same as pin 2.
8NC
This pin is internally not connected.
9NC
This pin is internally not connected.
10 GND Same as pin 2.
11 GND Same as pin 2.
12 NC This pin is internally not connected.
13 RF OUT RF output and bias pin. Because DC is present on this pin, a DC blocking
capacitor, suitable for the frequency of operation, should be used in most
applications. For biasing, an RF choke in series with a resistor is needed.
The DC voltage on this pin is typically 8.3V with a current of 150mA (for
75Ω board). See device voltage versus device current plot. In lower power
applications the value of RC can be increased to lower the current and VD
on this pin.
14 GND Same as pin 2.
15 GND Same as pin 2.
16 NC This pin is internally not connected.
RF OUT
RF IN
0.068
0.064
0.020
0.014
0.034 REF
0.068
0.053
0.009
0.007
0.034
0.016
8° MAX
0° MIN
0.244
0.229
0.393
0.386
0.157
0.150
0.020
REF
0.008
0.004
-A-
6 of 12
RF2317
Rev A19 DS050822
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Application Schematic
5MHz to 50MHz Reverse Path
Evaluation Board Schematic - 50Ω
(Download Bill of Materials from www.rfmd.com.)
RF OUT
3.9 μH
11 Ω10 nF
VCC
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
18 nF
RF IN
18 nF
NOTES:
Gain Flatness <0.5 dB
Input and Output Return Loss >20 dB in 75 Ω system
C1
1 nF
J1
RF IN C2
1 nF
J2
RF OUT
L1
3.3 μH
R1
51 Ω
C3
220 pF
R2
51 Ω
R3
51 Ω
R4
51 Ω
VCC
2317400 Rev -
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
C4
100 nF
C5
1 μF
R5
51 Ω
RC = 10.2 Ω
50 Ω μstrip 50 Ω μstrip
GND
NC
P1-1 VCC
P1
1
2
3
7 of 12
RF2317
Rev A19 DS050822
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Evaluation Board Schematic - 75Ω
C1
1 nF
J1
RF IN C2
1 nF
J2
RF OUT
L1
1000 nH
R4
56 Ω
C3
0.1 uF
R1
56 Ω
R2
56 Ω
R3
56 Ω
2317401 Rev -
75 Ω μstrip 75 Ω μstrip
GND
NC
P1-1 VCC
P1
1
2
3
VCC
1
3
2
4
6
5
8
7
16
14
15
13
11
12
9
10
RC= 14.3 Ω
8 of 12
RF2317
Rev A19 DS050822
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Evaluation Board Layout - 50Ω
2.0” x 2.0”
Board Thickness 0.031”, Board Material FR-4
Evaluation Board Layout - 75Ω
1.40” x 1.40”
Board Thickness 0.062”, Board Material FR-4
9 of 12
RF2317
Rev A19 DS050822
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
0
1.0 1.0-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
75 Ohms ICC 150mA Temp 25C
Swp Max
2GHz
Swp Min
0.05GHz
75Ω, ICC = 150mA, Temp = +25°C
S[1,1]
S[2,2]
0
1.0 1.0-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
75 Ohms ICC 180mA Temp 25CSwp Max
2GHz
Swp Min
0.05GHz
75Ω, ICC = 180mA, Temp = +25°C
S[1,1]
S[2,2]
10 of 12
RF2317
Rev A19 DS050822
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Device Voltage versus Current
75 Ω
5.0
6.0
7.0
8.0
9.0
10.0
0.0 25.0 50.0 75.0 100.0 125.0 150.0 175.0 200.0
Current (mA)
Device Voltage (V)
CSO (L) versus Channel Frequency Across Temperature
(133 Channels, ICC = 150 mA)
30.00
40.00
50.00
60.00
70.00
80.00
90.00
100.00
55.25 155.25 255.25 355.25 455.25 555.25 655.25 755.25 855.25
Channel Frequency (MHz)
CSO (dBc)
-40°C
+25°C
+85°C
CSO (U) versus Channel Frequency Across Temperature
(133 Channels, ICC = 150 mA)
30.00
40.00
50.00
60.00
70.00
80.00
90.00
100.00
55.3 155.3 255.3 355.3 455.3 555.3 655.3 755.3 855.3
Channel Frequency (MHz)
CSO (dBc)
-40°C
+25°C
+85°C
CTB versus Channel Frequency Across Temperature
(133 Channels, ICC = 150 mA)
81.00
82.00
83.00
84.00
85.00
86.00
87.00
88.00
89.00
55.25 155.25 255.25 355.25 455.25 555.25 655.25 755.25 855.25
Channel Frequency (MHz)
CTB (dBc)
-40°C
+25°C
+85°C
Noise Figure versus Frequency Over Temperature
75 Ω, ICC = 180 mA
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
100.0 200.0 300.0 400.0 500.0 600.0 700.0 800.0 900.0 1000.0
Frequency (MHz)
Noise Figure (dB)
-40°C
+25°C
+85°C
Gain versus Frequency
75Ω, ICC=180mA
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
100.0 200.0 300.0 400.0 500.0 600.0 700.0 800.0 900.0 1000.0
Frequency (MHz)
Gain (dB)
-40°C
+25°C
+85°C
11 of 12
RF2317
Rev A19 DS050822
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
CSO (L) versus Channel Frequency Across Temperature
(133 Channels, ICC = 180 mA)
30.00
40.00
50.00
60.00
70.00
80.00
90.00
100.00
55.25 155.25 255.25 355.25 455.25 555.25 655.25 755.25 855.25
Channel Frequency (MHz)
CSO (dBc)
-40°C
+25°C
+85°C
CSO (U) versus Channel Frequency Across Temperature
(133 Channels, ICC = 180 mA)
0.00
10.00
20.00
30.00
40.00
50.00
60.00
70.00
80.00
90.00
100.00
55.25 155.25 255.25 355.25 455.25 555.25 655.25 755.25 855.25
Channel Frequency (MHz)
CSO (dBc)
-40°C
+25°C
+85°C
CTB versus Channel Frequency Across Temperature
(133 Channels, ICC = 180 mA)
81.00
82.00
83.00
84.00
85.00
86.00
87.00
88.00
89.00
90.00
91.00
55.25 155.25 255.25 355.25 455.25 555.25 655.25 755.25 855.25
Channel Frequency (MHz)
CTB (dBc)
-40°C
+25°C
+85°C
12 of 12
RF2317
Rev A19 DS050822
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
