PD-97277 Rev A
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IRAM336-025SB
Series
3 Phase Inverter HIC
2A, 500V
Description
International Rectifier’s IRAM336-025SB is a multi-chip Hybrid IC developed for low power appliance motor
control applications such as Fans, Pumps, and refrigerator compressors. The compact Single in line (SIP-S)
package minimizes PCB space.
Several built-in protection features such as temperature feedback, shoot through prevention, under voltage
lockout, and shutdown input makes this a very robust solution. The combination of highly efficient high
voltage MOSFETs and the industry benchmark 3-phase HVIC driver (3.3V/5V input compatible) and
thermally enhanced package makes this a highly competitive solution.
The bootstrapped power supplies for the high side drivers can be generated using internal bootstrap diodes
eliminating the need for isolated power supplies. This feature reduces the component count, board space,
and cost of the system.
Features
• Motor Power up to 250W / 85~253 Vac.
• Integrated Gate Drivers and Bootstrap Diodes.
• Over-current Shut-Down function.
• Under-voltage lockout for all switches.
• Matched propagation delay for all channels.
• Schmitt-triggered input logic.
• Cross-conduction prevention logic.
• Lower di/dt gate driver for better noise immunity.
V
DSS
MOSFET Blocking Voltage 500 V
Vbus Positive DC Bus Input Voltage 400 V
I
o
@ T
C
=25°C RMS Phase Current 2.0
I
o
@ T
C
=100°C RMS Phase Current (Note 1) 1.0
I
pk
@ T
C
=25°C Maximum Peak Current (tp<100µs) 6.0
P
d
Maximum Power dissipation per Fet @ T
C
=25°C 15 W
T
J
(MOSFET & IC) Maximum Operating Junction Temperature +150
T
C
Operating Case temperature Range -20 to +100
T
STG
Storage Temperature Range -40 to +125
T Mounting torque (M3 screw) 0.6 Nm
Note 1: Sinusoidal Modulation at V
+
=360V, T
J
=150°C, F
PWM
=20kHz, F
MOD
=50Hz, MI=0.8, PF=0.6, See Figure 5.
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to V
SS
.
A
°C
Integrated Power Hybrid IC for
App
liance Motor Drive A
pp
lications
IRAM336-025SB
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Internal Electrical Schematic – IRAM336-025SB
GND
VB1
U, VS1
VB2
V, VS2
VB3
W, VS3
RB
VDD
VSS
R9
R1
C2
ITRIP
R2R3
R4R5R6
Fault/En
C1
R7
Internal to
Driver IC
(3)
Vbus
+
(2)
(9)
(8)
(7)
(6)
(5)
(4)
HIN1
HIN2
HIN3
LIN1
LIN2
LIN3
(11)
(12)
(13)
(14)
(15)
(16)
(10)
(17)
(18)
(19)
RTH
TH (1)
23 VS1
24 HO1
25 VB1
1 VCC
2 HIN1
3 HIN2
4 HIN3
5 LIN1
LIN2
6
LIN3
7
F
8
TTRIP
9
EN
10
RCIN
11
VSS
12
COM
13
22
VB2
21
HO2
20
VS2
19
VB3
18
HO3
17
VS3
Driver IC
LO1 16
LO3 14
LO2 15
M1 M2 M3
M4 M5 M6
IRAM336-025SB
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Absolute Maximum Ratings (Continued)
V
S1,2,3
High side floating supply offset
voltage V
B1,2,3
- 20 V
B1,2,3
+0.3 V
V
B1,2,3
High side floating supply
voltage -0.3 500 V
V
DD
Low Side and logic fixed supply
voltage -0.3 20 V
V
IN,
V
F/EN
, V
ITRIP
Input voltage LIN, HIN, Fault/EN,
I
Trip
-0.3
Lower of
(V
SS
+15V) or
V
DD
+0.3V
V
Absolute Maximum Ratings indicate substained limits beyond which damage to the device may occur. All voltage
paramaters are absolute voltages referenced to V
SS
.
MOSFET Characteristics
V
BIAS
(V
CC
, V
B
) = 15V and T
A
= 25°C unless otherwise specified. The V
DD
parameter is referenced to V
SS
.
Symbol Parameter Min Typ Max Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown
Voltage 500 --- --- V V
IN
=5V, I
D
=250µA
--- 5 100 V
IN
=5V, V
+
=500V
--- 2.2 2.7 I
D
=1.0A, V
DD
=15V
--- 5.5 --- I
D
=1.0A, V
DD
=15V, T
J
=150°C
--- 0.87 1.0 I
F
=1.0A
--- 0.76 --- I
F
=1.0A, T
J
=150°C
I
DSS
Drain-to-Source Leakage Current µA
R
DS(ON)
Drain-to-Source On Resistance ƻ
V
FM
Diode Forward Voltage Drop V
Recommended Operating Conditions
Symbol Definition Min Typ Max Units
V
+
Positive Bus Input Voltage --- --- 360
V
B1,2,3
High side floating supply voltage V
S
+10 V
S
+15 V
S
+20
V
DD
Low side and logic fixed supply voltage 10 15 20
V
ITRIP
I
TRIP
input voltage V
SS
--- V
SS
+5
V
IN
, V
F/EN
, V
ITRIP
Logic input voltage LIN, HIN, Fault/EN, I
TRIP
- Note 2 V
SS
--- V
SS
+5 V
F
p
Maximum PWM Carrier Frequency --- --- 20 KHz
V
V
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. All voltages are absolute referenced to V
SS
. The V
S
offset is tested with all supplies biased at
15V differential.
Note 2: Logic operational for V
s
from COM-5V to V
SS
+500V. Logic state held for V
s
from V
SS
-5V to V
SS
-V
BS
.
(please refer to DT97-3 for more details).
IRAM336-025SB
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Static Electrical Characteristics
(TJ= 25°C Unless Otherwise Specified)
Symbol Definition Min Typ Max Units
V
EN,th+
Enable Positive going threshold --- --- 2.5 V
V
EN,th-
Enable Negative going threshold 0.8 --- --- V
V
DDUV+,
V
BSUV+
V
DD
and V
BS
supply undervoltage, Positive going threshold 88.99.8V
V
DDUV-,
V
BSUV-
V
DD
and V
BS
supply undervoltage, Negative going threshold 7.4 8.2 9 V
I
QBS
Quiescent V
BS
supply current --- 70 120 µA
I
QDD
Quiescent V
DD
supply current --- 3 4 mA
I
LK
Offset Supply Leakage Current --- --- 50 µA
R
B
Internal BS Diode R
ON
(see Integrated BS Functionality page 10) --- 200 --- ƻ
V
BIAS
(V
DD
, V
BS1,2,3
)=15V, unless otherwise specified. The V
IN
and I
IN
parameters are referenced to V
SS
and are applicable
to all six channels (Static Electrical Characteristics are Based on Driver IC Data Sheet).
Dynamic Electrical Characteristics
(T
J
= 25°C Unless Otherwise Specified)
Symbol Parameter Min Typ Max Units Conditions
T
ON
Input to Output propagation turn-
on delay time (see fig.13a) --- 750 --- ns
T
OFF
Input to Output propagation turn-
off delay time (see fig. 13b) --- 920 --- ns
I
D
=1.5A, V
+
=360V
Thermal and Mechanical Characteristics
Symbol Parameter Min Typ Max Units Conditions
R
th(J-C)
Thermal resistance, per FET --- 5.8 8.0 °C/W Flat, Insulation Material.
Internal NTC - Thermistor Characteristics
Parameter Definition Min Typ Max Units Conditions
R25 Resistance 97 100 103 kƻTC = 25°C
R125 Resistance 2.25 2.52 2.8 kƻTC = 125°C
B B-constant (25-50°C) 4208 4250 4293 k R2 = R1e [B(1/T2 - 1/T1)]
Temperature Range -40 --- 125 °C
Typ. Dissipation constant --- 1 --- mW/°C TC = 25°C
IRAM336-025SB
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Figure 1. Input/Output Timing Diagram
Note 3: The shaded area indicates that both high-side and low-side switches are off and therefore the half-
bridge output voltage would be determined by the direction of current flow in the load.
IRAM336-025SB
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ITRIP
LIN1,2,3
HIN1,2,3
TFLT-CLR
50%
50%
U,V,W
50%
TITRIP
50%
Figure 2. ITRIP Timing Waveform
Note 4: The shaded area indicates that both high-side and low-side switches are off and therefore the half-
bridge output voltage would be determined by the direction of current flow in the load.
Input-Output Logic Level Table
FLT- EN I
TRIP
HIN1,2,3 LIN1,2,3 U,V,W
1001
V
+
10100
1011Off
11XXOff
0XXXOff
IRAM336-025SB
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Typical Application Circuit – IRAM336-025SB
IRAM336-025SB
Date Code Lot #
119
Application Circuit Recommendation
1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce
ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins
will further improve performance.
2. In order to provide good decoupling between VCC-VSS and Vb-Vs terminals, the capacitors shown
connected between these terminals should be located very close to the module pins. Additional high
frequency capacitors, typically 0.1µF, are strongly recommended.
3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made
based on IR design tip DN 98-2a or application note AN-1044 or Figure 12.
4. WARNING! Please note that after approx. 8ms the FAULT is automatically reset (see Dynamic
Characteristics Table on page 5). PWM generator must be disabled within automatic reset time (TFLT-CLR) to
guarantee shutdown of the system, over-current condition must be cleared before resuming operation.
5. The case of the module is connected to the negative DC Bus and is NOT Isolated. It is
recommended to provide isolation material between case and heat sink to avoid electrical
shock.
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Module Pin-Out Description
Pin Name Description
1 TH Temperature Feedback
2V
-
Negative Bus Input Voltage
3V
+
Positive Bus Input Voltage
4W,V
S3
Output 3 - High Side Floating Supply Offset Voltage
5V
B3
High Side Floating Supply Voltage 3
6V,V
S2
Output 2 - High Side Floating Supply Offset Voltage
7V
B2
High Side Floating Supply voltage 2
8U,V
S1
Output 1 - High Side Floating Supply Offset Voltage
9V
B1
High Side Floating Supply voltage 1
10 I
TRIP
Current Feedback & Shut-down Function
11 H
IN1
Logic Input High Side Gate Driver - Phase 1
12 H
IN2
Logic Input High Side Gate Driver - Phase 2
13 H
IN3
Logic Input High Side Gate Driver - Phase 3
14 L
IN1
Logic Input Low Side Gate Driver - Phase 1
15 L
IN2
Logic Input Low Side Gate Driver - Phase 2
16 L
IN3
Logic Input Low Side Gate Driver - Phase 3
17 FAULT/EN Fault Indicator & Enable Function
18 V
DD
+15V Main Supply
19 V
SS
Negative Main Supply
1
19
IRAM336-025SB
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Integrated Bootstrap Functionality
The internal Driver IC in the IRAM336-025SB embeds an integrated bootstrap FET that allows an alternative
drive of the bootstrap supply for a wide range of applications.
There is one bootstrap FET for each channel and it is connected between each of the floating supply (VB1,
VB2, VB3) and Vcc as shown in Figure 3.
Figure 3. Simplified BootFet Connection
The Bootstrap FET of each channel follows the state of the respective low side output stage (i.e., bootFet is
ON when LO is high, it is OFF when LO is low), unless the VB voltage is higher than approximately 1.1(Vcc).
In that case the bootstrap FET stays off until the Vs voltage returns below that threshold (see Fig. 4).
Figure 4. State Diagram
Bootstrap FET is suitable for most PWM modulation schemes and can be used either in parallel with the
external bootstrap network (diode+resistor) or as a replacement of it. The use of the integrated bootstrap
as a replacement of the external bootstrap network may have some limitations in the following situations:
-When used in non-complementary PWM schemes (typically 6-step modulations).
-At a very high PWM duty cycle due to the bootstrap FET equivalent resistance (RBS, see page 5).
In these cases, better performances can be achieved by using an external bootstrap network.
IRAM336-025SB
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0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
02468101214161820
PWM Sw itching Fre que ncy - kHz
Maximum Output Phase RMS Current - A
T
C
= 80º
C
T
C
= 90º
C
T
C
= 100º
C
T
J
= 150ºC
Sinusoidal Modulation
Figure 5. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency
Sinusoidal Modulation, V+=360V, TJ=150°C, FMOD=50Hz, MI=0.8, PF=0.6
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1 10 100
Modulation Frequency - Hz
Maximum Output Phase RMS Current - A
F
PWM
= 12kHz
F
PWM
= 16kHz
F
PWM
= 20kHz
T
J
= 150ºC
Sinusoidal Modulation
Figure 6. Maximum Sinusoidal Phase Current vs. Modulation Frequency
Sinusoidal Modulation, V+=360V, TJ=150°C, MI=0.8, PF=0.6
IRAM336-025SB
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0
5
10
15
20
25
30
35
0 2 4 6 8 10 12 14 16 18 20
PWM Sw itching Freque ncy - kHz
Total Power Loss- W
I
OUT
= 1.2A
I
OUT
= 1.0A
I
OUT
= 0.8A
T
J
= 150ºC
Sinusoidal Modulation
Figure 7. Total Power Losses vs. PWM Switching Frequency
Sinusoidal Modulation, V+=360V, TJ=150°C, MI=0.8, PF=0.6
0
5
10
15
20
25
30
35
40
45
50
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
Output Phase Current - A
RMS
Total Power Loss - W
F
PWM
= 20kHz
F
PWM
= 16kHz
F
PWM
= 12kHz
T
J
= 150ºC
Sinusoidal Modulation
Figure 8. Total Power Losses vs. Output Phase Current
Sinusoidal Modulation, V+=360V, TJ=150°C, MI=0.8, PF=0.6
IRAM336-025SB
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0
25
50
75
100
125
150
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
Output Phase Current - A
RMS
Max Allowable Case Temperature - ºC
F
PWM
= 12kHz
F
PWM
= 16kHz
F
PWM
= 20kHz
T
C
is limited to 100ºC
Figure 9. Maximum Allowable Case Temperature vs. Output RMS Current per Phase
Sinusoidal Modulation, V+=360V, TJ=150°C, MI=0.8, PF=0.6
118.8
70
80
90
100
110
120
130
140
150
160
70 75 80 85 90 95 100 105 110 115 120
Internal Thermistor Temperature Equivalent Read Out - °C
MOSFET Junction Temperature - °C
T
J avg
= 1.181 x T
Therm
+ 9.728
Figure 10. Estimated Maximum MOSFET Junction Temperature vs. Thermistor Temperature
Sinusoidal Modulation, V+=360V, TJ=150°C, FPWM=20KHz, FMOD=50Hz, MI=0.8, PF=0.6
IRAM336-025SB
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0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
-40-30-20-100 102030405060708090100110120130140150
Thermistor Tem perature - °C
Thermistor Pin Read-Out Voltage - V
Min
Avg.
Max
T
THERM
R
THERM
T
THERM
R
THERM
T
THERM
R
THERM
°C ƻ°C ƻ°C ƻ
-40 4397119 25 100000 90 7481
-35 3088599 30 79222 95 6337
-30 2197225 35 63167 100 5384
-25 1581881 40 50677 105 4594
-20 1151037 45 40904 110 3934
-15 846579 50 33195 115 3380
-10 628988 55 27091 120 2916
-5 471632 60 22224 125 2522
0 357012 65 18322 130 2190
5 272500 70 15184 135 1907
10 209710 75 12635 140 1665
15 162651 80 10566 145 1459
20 127080 85 8873 150 1282
Figure 11. Thermistor Readout vs. Temperature (12Kohm pull-up resistor, 5V) and
Normal Thermistor Resistance values vs. Temperature Table.
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
0 5 10 15 20
PWM Frequency - kHz
Recommended Bootstrap Capacitor - µF
1µF
1.5µF
2.2µF
3.3µF
4.7µF
10µF
Figure 12. Recommended Bootstrap Capacitor Value vs. Switching Frequency
IRAM336-025SB
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Figure 13. Switching Parameter Definitions
50%
HIN /LIN
V
DS
ID
HIN /LIN
TOFF
tf
10% ID
50%
V
CE
V
DS ID
HIN /LIN
TON
tr
50%
HIN /LIN
90% ID
10% ID
50%
V
DS
90% ID
Figure 13a. Input to Output propagation turn-on
delay time.
Figure 13b. Input to Output propagation turn-off
delay time.
Figure 13c. Diode Reverse Recovery.
IRAM336-025SB
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Figure CT1. Switching Loss Circuit
IRAM336-025SB
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Package Outline IRAM336-025SB
IRAM136-025SB
note2
note3
note4
note5
note1: Unit Tolerance is +0.4mm,
Unless Otherwise Specified.
note2: Mirror Surface Mark indicates Pin1 Identification.
note3: Characters Font in this drawing differs from
Font shown on Module.
note4: Lot Code Marking.
䇭䇭䇭 Characters Font in this drawing differs from
䇭䇭䇭䇭 Font shown on Module.
note5: Non-Isolated Back Side.
Data and Specifications are subject to change without notice.
For mounting instruction see AN-1049.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
7/2007
