TO-92 Plastic-Encapsulate Transistors i ,. $9018 TRANSISTOR(NPN) FEATURES gq q oO ' TO-92 Pom: 0.31W (Tamb=25C) ater saie uiies 1.EMITTER 1. 1 Icom: 0.05A 2.BASE gos oes. | 3.COLLECTOR Vieryceo: 25 V i pss scat syyihiagead oy os me atetege junction temperature range - 123 Tu,Tsg: -55C to + 150 ELECTRICAL CHARACTERISTICS (Tamb=25C unless otherwise specified) Collector-base breakdown voltage ViBR)CBO Ic= 100 n A, le=0 25 Vv Coliector-emitter breakdown voltage V(BR)CEO Ic= 0.1 mA, lp=0 18 Vv Emitter-base breakdown voltage . V(BR)EBO le= 100 1 A, Ic=0 4 Vv Collector cut-off current Icso Vcs= 20 V, le=0 0.1 LA Collector cut-off current Iceo Vce= 15 V, In=0 0.1 vA Emitter cut-off current leso Ves= 3 V, Ic=0 0.1 vA DC current gain Hre Vce= V, Ic= 1 mA 28 270 Collector-emitter saturation voltage VcEsat Ic= 10 mA, le= 1 mA 0.5 Vv Base-emitter saturation voltage VBesat Ic= 10 mA, la= 1 mA 1.4 Vv Vce=5V, c= 5 mA Transition frequency f- 600 MHz f =400MHz CLASSIFICATION OF Here Rank D E F G H I. J Range 28-45 39-60 54-80 72-108 97-146 132-198 180-270 152Io[mA], COLLECTOR CURRENT Vee(sat), Vce(sat)[V], SATURATION VOLTAGE Typical Characteristics Vee[V]. COLLECTOR-EMITTER VOLTAGE Static Characteristic 01 4 40 IcfmAj, COLLECTOR CURRENT Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage hre. OC CURRENT GAIN fr{MHz], CURRENT GAIN-BANDWIDTH PRODUCT 4000 4100 0.4 $9018 i[mA]. COLLECTOR CURRENT DC Current Gain 1 10 io{mA], COLLECTOR CURRENT Current Gain Bandwidth Product 153