VSK.F200..P Series Vishay Semiconductors Fast Thyristor/Diode and Thyristor/Thyristor (MAGN-A-PAK Power Modules), 200 A FEATURES * Fast turn-off thyristor * Fast recovery diode * High surge capability * Electrically isolated baseplate * 3500 VRMS isolating voltage * Industrial standard package * UL approved file E78996 * Compliant to RoHS directive 2002/95/EC MAGN-A-PAK * Designed and qualified for industrial level DESCRIPTION PRODUCT SUMMARY IT(AV) 200 A Type Modules - Thyristor, Fast This series of MAGN-A-PAK modules are intended for applications such as self-commutated inverters, DC choppers, electronic welders, induction heating and others where fast switching characteristics are required. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IT(AV) TC VALUES UNITS 200 A 85 C 444 IT(RMS) ITSM I2t 50 Hz 7600 60 Hz 8000 50 Hz 290 60 Hz 265 I2t 2900 tq 20/25 trr 2 VDRM/VRRM Range TJ A kA2s kA2s s 800/1200 V - 40 to 125 C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VSK.F200- VOLTAGE CODE VRRM/VDRM, MAXIMUM REPETITIVE PEAK REVERSE AND OFF-STATE BLOCKING VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 08 800 800 12 1200 1200 Document Number: 94422 Revision: 19-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com IRRM/IDRM AT TJ = 125 C mA 50 www.vishay.com 1 VSK.F200..P Series Vishay Semiconductors Fast Thyristor/Diode and Thyristor/Thyristor (MAGN-A-PAK Power Modules), 200 A CURRENT CARRYING CAPABILITY ITM FREQUENCY ITM 180 el 50 Hz ITM 100 s 180 el 380 560 630 850 2460 3180 400 Hz 460 690 710 1060 1570 2080 2500 Hz 310 450 530 760 630 860 5000 Hz 250 360 410 560 410 560 10 000 Hz 180 280 300 410 - - Recovery voltage Vr 50 50 50 50 50 Voltage before turn-on Vd 80 % VDRM UNITS 80 % VDRM 50 80 % VDRM A V Rise of on-state current dI/dt 50 50 - - - - A/s Case temperature 85 60 85 60 85 60 C Equivalent values for RC circuit 10/0.47 10/0.47 /F 10/0.47 ON-STATE CONDUCTION PARAMETER SYMBOL Maximum average on-state current at case temperature Maximum RMS on-state current Maximum peak, one-cycle non-repetitive on-state, surge current IT(AV) IT(RMS) ITSM TEST CONDITIONS 180 conduction, half sine wave 444 t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t I2t for fusing C 7600 t = 10 ms I2t A 85 t = 10 ms t = 8.3 ms No voltage reapplied 100 % VRRM reapplied No voltage reapplied 8000 Sinusoidal half wave, initial TJ = 125 C 100 % VRRM reapplied 6700 290 265 205 t = 0.1 ms to 10 ms, no voltage reapplied 2900 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 1.18 High level value of threshold voltage VT(TO)2 (I > x IT(AV) < I < x IT(AV)), TJ = TJ maximum 1.25 Low level value on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.74 High level value on-state slope resistance rt2 (I > x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.70 Ipk = 600 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.73 Maximum holding current IH TJ = 25 C, IT > 30 A 600 Maximum latching current IL TJ = 25 C, VA = 12 V, Ra = 6 , Ig = 1A 1000 www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com kA2s 187 VT(TO)1 VTM A 6400 Low level value or threshold voltage Maximum on-state voltage drop UNITS 200 As AC switch t = 8.3 ms Maximum I2t for fusing VALUES kA2s V m V mA Document Number: 94422 Revision: 19-Jul-10 VSK.F200..P Series Fast Thyristor/Diode and Thyristor/Thyristor Vishay Semiconductors (MAGN-A-PAK Power Modules), 200 A SWITCHING PARAMETER Maximum non-repetitive rate of rise Maximum recovery time Maximum turn-off time SYMBOL TEST CONDITIONS dI/dt Gate drive 20 V, 20 , tr 1 ms, VD = 80 % VDRM, TJ = 25 C trr ITM = 350 A, dI/dt = - 25 A/s, VR = 50 V, TJ = 25 C tq ITM = 750 A; TJ = TJ maximum; dI/dt = - 25 A/s; VR = 50 V; dV/dt = 400 V/s linear to 80 % VDRM VALUES K J 800 UNITS A/s 2 20 s 25 BLOCKING PARAMETER SYMBOL Maximum critical rate of rise of off-state voltage dV/dt TEST CONDITIONS VALUES UNITS TJ = 125 C, exponential to 67 % VDRM 1000 V/s 3000 V 50 mA VALUES UNITS RMS insulation voltage VINS 50 Hz, circuit to base, TJ = 25 C, t = 1 s Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = 125 C, rated VDRM/VRRM applied TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum peak average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak negative gate voltage -VGT Maximum DC gate current required to trigger IGT DC gate voltage required to trigger VGT DC gate current not to trigger IGD DC gate voltage not to trigger VGD TEST CONDITIONS f = 50 Hz, d% = 50 60 TJ = 125 C, f = 50 Hz, d% = 50 10 TJ = 125 C, tp 5 ms TJ = 25 C, Vak 12 V, Ra = 6 TJ = 125 C, rated VDRM applied W 10 A 5 V 200 mA 3 V 20 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating temperature range TEST CONDITIONS TJ - 40 to 125 Storage temperature range TStg - 40 to 150 Maximum thermal resistance, junction to case per junction RthJC Maximum thermal resistance, case to heatsink per module RthC-hs 0.125 Mounting surface flat, smooth and greased 0.025 K/W MAP to heatsink Mounting torque 10 % busbar to MAP Approximate weight DC operation A mounting compound is recommended. The torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Use of cable lugs is not recommended, busbar should be used and restrained during tightening. Threads must be lubricated with a compound. Case style Document Number: 94422 Revision: 19-Jul-10 C 4 to 6 (35 to 53) N*m (lbf * in) 500 g 17.8 oz. MAGN-A-PAK For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 VSK.F200..P Series Vishay Semiconductors Fast Thyristor/Diode and Thyristor/Thyristor (MAGN-A-PAK Power Modules), 200 A RthJC CONDUCTION CONDUCTIONS ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180 0.009 0.006 120 0.10 0.011 90 0.014 0.015 60 0.020 0.020 30 0.32 0.033 UNITS K/W VSK.F200.. Series R thJC (DC) = 0.125 K/ W 120 110 Conduc tion Angle 100 90 30 60 80 90 70 120 180 60 0 40 80 120 160 200 240 Maximum Average On-state Power Loss (W) 130 350 180 120 90 60 30 300 250 200 RMS Limit 150 Conduc tion Angle 100 VSK.F200.. Series Per Junction TJ= 125C 50 0 0 40 80 120 160 200 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 3 - On-State Power Loss Characteristics 130 VSK.F200.. Series R thJC (DC) = 0.125 K/ W 120 110 Conduction Period 100 90 30 80 60 90 120 70 180 DC 60 0 50 100 150 200 250 300 350 Average On-state Current (A) Fig. 2 - Current Ratings Characteristics www.vishay.com 4 Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C) Note * Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC 500 DC 180 120 90 60 30 450 400 350 300 250 200 RMS Limit Conduction Period 150 VSK.F200.. Series Per Junction TJ = 125C 100 50 0 0 50 100 150 200 250 300 350 Average On-state Current (A) Fig. 4 - On-State Power Loss Characteristics For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94422 Revision: 19-Jul-10 VSK.F200..P Series 6000 5000 4000 VSK.F200.. Series Per Junction 3000 1 10 1 (K/ W) At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ= 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s Steady State Value: R thJC = 0.125 K/ W thJC 7000 (DC Operation) Transient Thermal Impedance Z Peak Half Sine Wave On-state Current (A) Fast Thyristor/Diode and Thyristor/Thyristor Vishay Semiconductors (MAGN-A-PAK Power Modules), 200 A 0.1 0.01 VSK.F200.. Series Per Junc tion 0.001 0.001 100 Numb er Of Equa l Amplitude Half Cyc le Current Pulses (N) Ma ximum Non Rep etitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125C No Voltage Reap plied Rated VRRMReapplied 7000 6000 5000 4000 VSK.F200.. Series Per Junction 3000 0.01 0.1 1 10 100 320 ITM = 1000 A 500 A 300 A 200 A 100 A 300 280 260 240 220 200 180 160 140 120 VSK.F200.. Series TJ = 125C 100 80 10 20 30 40 50 60 70 80 90 100 Pulse Train Duration (s) Rate Of Fall Of Forward Current - di/ dt (A/ s) Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 9 - Reverse Recovery Charge Characteristics 10000 Instantaneous On-state Current (A) 1 Square Wave Pulse Duration (s) Maximum Reverse Recovery Charge - Qrr (C) 8000 0.1 Fig. 8 - Thermal Impedance ZthJC Characteristics 1000 TJ= 25C TJ= 125C VSK.F200.. Series Per Junc tion 100 1 2 3 4 5 6 7 Maximum Reverse Rec overy Current - Irr (A) Peak Half Sine Wave On-state Current (A) Fig. 5 - Maximum Non-Repetitive Surge Current 0.01 180 I TM = 1000A 500A 300A 200A 100A 150 120 90 60 30 10 VSK.F200.. Series TJ = 125C 20 30 40 50 60 70 80 90 100 Instantaneous On-state Voltage (V) Rate Of Fall Of Forward Current - di/ dt (A/ s) Fig. 7 - On-State Voltage Drop Characteristics Fig. 10 - Reverse Recovery Current Characteristics Document Number: 94422 Revision: 19-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 VSK.F200..P Series Vishay Semiconductors Fast Thyristor/Diode and Thyristor/Thyristor (MAGN-A-PAK Power Modules), 200 A Peak On-stata Current (A) 1E4 50 Hz 50 Hz 150 150 400 1000 1E3 400 2500 1000 2500 5000 5000 1E2 tp Snub ber c irc uit R s= 10 ohms C s = 0.47 F V D = 80% V DRM VSK.F200.. Series Sinusoidal pulse TC = 85C 1E1 1E1 1E2 1E3 1E1E 44 tp Snubber circuit R s= 10 ohms C s = 0.47 F V D = 80% V DRM VSK.F200.. Series Sinusoidal pulse T C = 60C 1E1 1E1 1E2 1E3 1E4 Pulse Basewidth (s) Pulse Basewidth (s) Fig. 11 - Frequency Characteristics Peak On-state Current (A) 1E4 tp VSK.F200.. Series Trapezoid a l pulse TC= 85C d i/d t 50A/ s tp VSK.F200.. Series Trapezoidal pulse TC = 85C di/ dt 100A/ s 50 Hz 50 Hz 150 150 400 1E3 400 1000 1000 2500 2500 5000 5000 Snubber circ uit R s= 10 ohms C s = 0.47 F V D = 80% V DRM 1E2 1E1 1E2 1E3 1E1E4 4 1E1 E1 Snubber circ uit R s= 10 ohms C s = 0.47 F V D = 80% V DRM 1E2 1E3 1E4 Pulse Basewidth (s) Pulse Basewidth (s) Fig. 12 - Frequency Characteristics Peak On-state Current (A) 1E4 50 Hz 50 Hz 150 150 400 400 1E3 1000 1000 2500 2500 5000 tp 1E2 1E1 5000 VSK.F200.. Series Trapezoidal pulse TC= 60C di/ dt 50A/ s 1E2 Snubber circ uit R s= 10 ohms C s = 0.47 F V D = 80% V DRM 1E3 1E4 1E4 tp 1E1 E1 Snubber circ uit R s= 10 ohms C s = 0.47 F V D = 80% V DRM VSK.F200.. Series Trapezoidal pulse TC= 60C di/ dt 100A/ s 1E2 1E3 1E4 Pulse Basewidth (s) Pulse Basewidth (s) Fig. 13 - Frequency Characteristics www.vishay.com 6 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94422 Revision: 19-Jul-10 VSK.F200..P Series Fast Thyristor/Diode and Thyristor/Thyristor Vishay Semiconductors (MAGN-A-PAK Power Modules), 200 A 1E4 Peak On-state Current (A) 10 joules per pulse 10 joules per pulse 5 2.5 5 2.5 1 1 0.5 1E3 0.5 0.25 0.25 0.1 0.1 0.05 0.05 1E2 tp 1E1 1E1 VSK.F200.. Series Sinusoidal pulse VSK.F200.. Series Trapezoidal pulse d i/ dt 50A/ s tp 1E2 E1 1E1 1E4 1E4 1E3 1E2 1E3 1E4 Pulse Basewidth (s) Pulse Basewidth (s) Fig. 14 - Maximum On-State Energy Power Loss Characteristics 10 Rectangular gate pulse a) Recommended load line for rated di/ dt : 10V, 10ohms b) Recommended load line for <=30% rated di/ dt : 10V, 20ohms (1) PGM = 8W, tp = 25ms (2) PGM = 20W, tp = 1ms (3) PGM = 40W, tp = 5ms (4) PGM = 80W, tp = 2.5ms (a) Tj=125 C 1 Tj=-40 C (b) Tj=25 C Instantaneous Gate Voltage (V) 100 (1) (2) (3) (4) VGD IGD 0.1 0.01 VSK.F200.. Series 0.1 Frequenc y Limited by PG(AV) 1 10 100 Instantaneous Gate Current (A) Fig. 15 - Gate Characteristics Document Number: 94422 Revision: 19-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 7 VSK.F200..P Series Vishay Semiconductors Fast Thyristor/Diode and Thyristor/Thyristor (MAGN-A-PAK Power Modules), 200 A ORDERING INFORMATION TABLE Device code VSK T F 200 1 2 3 4 - 12 H K P 5 6 7 8 1 - Module type 2 - Circuit configuration (see circuit configuration table) 3 - Fast SCR 4 - Current rating: IT(AV) x 10 rounded 5 - Voltage code x 100 = VRRM (see Voltage Ratings table) 6 - dV/dt code: H 400 V/s 7 - tq code: K 20 s J 25 s 8 - Lead (Pb)-free Note * To order the optional hardware go to www.vishay.com/doc?95172 CIRCUIT CONFIGURATION CIRCUIT CONFIGURATION CODE CIRCUIT DESCRIPTION CIRCUIT DRAWING VSKUF.. + Two SCRs common cathodes - - K2 G2 G1 K1 U + - - VSKKF.. + SCR/diode common cathodes K + - K2 G2 - VSKVF.. - Two SCRs common anodes + K2 G2 G1 K1 V - www.vishay.com 8 + + For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com + Document Number: 94422 Revision: 19-Jul-10 VSK.F200..P Series Fast Thyristor/Diode and Thyristor/Thyristor Vishay Semiconductors (MAGN-A-PAK Power Modules), 200 A CIRCUIT CONFIGURATION CIRCUIT CONFIGURATION CODE CIRCUIT DESCRIPTION CIRCUIT DRAWING VSKNF.. - + + G1 K1 SCR/diode common anodes N - + + VSKLF.. ~ SCR/diode doubler circuit, negative control L + ~ + K2 G2 - VSKTF.. ~ Two SCRs doubler circuit + - K2 G2 G1 K1 T + ~ - VSKHF.. ~ + G1 K1 SCR/diode doubler circuit, positive control H ~ + - LINKS TO RELATED DOCUMENTS Dimensions Document Number: 94422 Revision: 19-Jul-10 www.vishay.com/doc?95086 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 9 Outline Dimensions Vishay Semiconductors MAGN-A-PAK DIMENSIONS in millimeters (inches) O 5.5 35 (1.38) 20 (0.79) 80 (3.15) 50 (1.97) 38 (1.5) 6 (0.24) 3 screws M8 x 1.25 28 (1.12) 6 (0.24) 9 (0.35) 10 (0.39) HEX 13 52 (2.04) 51 (2.01) 32 (1.26) 115 (4.53) 92 (3.62) Notes * Dimensions are nominal * Full engineering drawings are available on request * UL identification number for gate and cathode wire: UL 1385 * UL identification number for package: UL 94 V-0 Document Number: 95086 Revision: 03-Aug-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1