TSFF5510
www.vishay.com Vishay Semiconductors
Rev. 1.3, 23-Aug-11 1Document Number: 81835
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Speed Infrared Emitting Diode, 870 nm,
GaAlAs Double Hetero
DESCRIPTION
TSFF5510 is an infrared, 870 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a clear, untinted plastic package.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• Peak wavelength: p = 870 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: = ± 38°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 24 MHz
• Good spectral matching with Si photodetectors
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• Infrared video data transmission between camcorder and
TV set
• Free air data transmission systems with high data
transmission rates
Note
• Test conditions see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
21061
PRODUCT SUMMARY
COMPONENT Ie (mW/sr) (deg) p (nm) tr (ns)
TSFF5510 32 ± 38 870 15
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
TSFF5510 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR5V
Forward current IF100 mA
Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA
Surge forward current tp = 100 μs IFSM 1A
Power dissipation PV180 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 40 to + 85 °C
Storage temperature range Tstg - 40 to + 100 °C
Soldering temperature t 5 s, 2 mm from case Tsd 260 °C
Thermal resistance junction/ambient J-STD-051, leads 7 mm soldered on PCB RthJA 230 K/W
TSFF5510
www.vishay.com Vishay Semiconductors
Rev. 1.3, 23-Aug-11 2Document Number: 81835
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 1 - Forward Current Limit vs. Ambient Temperature
0
20
40
60
80
100
120
140
160
180
200
0 102030405060708090100
21142
T
amb
- Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
RthJA = 230 K/W
0
20
40
60
80
100
120
0 102030405060708090100
T
amb
- Ambient Temperature (°C)
21143
I
F
- Forward Current (mA)
R
thJA
= 230 K/W
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
IF = 100 mA, tp = 20 ms VF1.3 1.45 1.7 V
IF = 450 mA, tp = 100 μs VF1.5 1.75 2.1 V
IF = 1 A, tp = 100 μs VF2.1 V
Temperature coefficient of VFIF = 1 mA TKVF - 1.8 mV/K
Reverse current VR = 5 V IR10 μA
Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj110 pF
Radiant intensity IF = 100 mA, tp = 20 ms Ie16 32 48 mW/sr
Radiant power IF = 100 mA, tp = 20 ms e55 mW
Temperature coefficient of eIF = 100 mA TKe- 0.35 %/K
Angle of half intensity ± 38 deg
Peak wavelength IF = 100 mA p870 nm
Spectral bandwidth IF = 100 mA 55 nm
Temperature coefficient of pIF = 100 mA TKp0.25 nm/K
Rise time IF = 100 mA tr15 ns
Fall time IF = 100 mA tf15 ns
Cut-off frequency IDC = 70 mA, IAC = 30 mA pp fc24 MHz
TSFF5510
www.vishay.com Vishay Semiconductors
Rev. 1.3, 23-Aug-11 3Document Number: 81835
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 2 - Pulse Forward Current vs. Pulse Duration
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Radiant Intensity vs. Forward Current
Fig. 5 - Radiant Power vs. Forward Current
Fig. 6 - Relative Radiant Power vs. Wavelength
Fig. 7 - Relative Radiant Intensity vs. Angular Displacement
100
1000
0.01 0.1 1 10 100
tp - Pulse Duration (ms)
16031
t
p
/T = 0.01
0.05
0.2
0.5
0.1
0.02
T
amb
< 50 °C
IF - Forward Current (mA)
0.001
0.01
0.1
1
10
0 0.5 1 1.5 2 2.5 3 3.5 4
21009
I
F
- Forward Current (A)
V
F
- Forward Voltage (V)
0.1
1
10
100
1000
1 10 100 1000
21010
I
F
- Forward Current (mA)
I
e
- Radiant Intensity (mW/sr)
t
p
= 100 µs
t
p
/T = 0.002
0.1
1
10
100
1000
1 10 100 1000
IF - Forward Current (mA)
φe - Radiant Power (mW)
21062
tp = 100 µs
tp/T = 0.002
0
0.25
0.50
0.75
1.00
1.25
750 790 830 870 910 950
λ - Wavelength (nm)
21011
- Relative Radiant Power
e, rel
Φ
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
- 90 - 70 - 50 - 30 - 10 0 10 30 50 70 90
21012
Ie, rel - Relative Radiant Intensity
Angle (°)
TSFF5510
www.vishay.com Vishay Semiconductors
Rev. 1.3, 23-Aug-11 4Document Number: 81835
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters
CA
Ø 5.9 ± 0.15
31.4 ± 0.55
Ø 4.8 ± 0.15
SR2.35
Area not plane
3.8 ± 0.15
4.4 ± 0.3
9.5 ± 0.3
2.54 nom.
1 min.
1.1 ± 0.25
0.5 + 0.15
- 0.05
(1.72)
specifications
according to DIN
technical drawings
Drawing-No.: 6.544-5390.01-4
Issue: 2; 19.05.09
20796
0.5 + 0.15
- 0.05
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
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