OPTOELECTRONICS PHOTO SCR OPTOCOUPLERS H11C1 H11C2 H11C3 H11C4 H11C5 H11C6 The H11C series consists of a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a dual-in-line package. 10 A, T?L compatible, solid state relay 25 W logic indicator lamp driver High efficiency, low degracation, liquid epitaxial LED 200 V symmetrical transistor coupler (H11C1, H11C2, H11C3) 400 V symmetrical transistor coupler (H11C4, H11C5, H11C6) Underwriters Laboratory (UL) recognizedFile #E90700 041 DIMENSIONS IN mm PACKAGE CODE E evi603 ANODE (i 6] GATE cat. [2| 6] ANODE 2, fa] a|cath. $T1602 Equivalent Circuit 6 0 TOTAL DETECTOR Storage temperature .............. 55C to 150C + ~= Power dissipation (ambient) .............. 400 mW Operating temperature .............. 55C to100C _Derate linearly (above 25C ambient) .... 5.3 mW/C Lead solder temperature ........ 260C for10 sec Power dissipation (case) .......... 0. eee eee 1W INPUT DIODE Derate linearly (above 25C case) ...... 13.3 mW/C Power dissipation ............2.-20.00.005 400 mw __- Peak reverse gate voltage ................-.+-- 6V Derate linearly (above 25C) ........... 1.33 mw/C RMS on-state current ...... 0.0... cere eee 300 mA Continuous forward current ............0005 60 mA Peak on-state current (100 ys, 1% duty cycle) ... 10A Peak forward current (1 4s pulse, 300 pps) ...... 3A Surgecurrent(10ms) ......-.--..----see ees 5A Reverse voltage .........0ceeceeeceeeeec eee: 6y Peak forward voltage (H11C1, H11C2, H11C3) .. 200 V Peak forward voltage (H11C4, H11C5, H11C6).. 400 VOPTOELECTRONICS PHOTO SCR OPTOCOUPLERS UNITS TEST CONDITIONS INPUT DIODE Forward voltage Vr 1.2 1.5 Vv =10mA Reverse leakage current In 10 pA Va=3V Capacitance Cc 50 pF V=0, f=1 MHz OUTPUT DETECTOR Off-state voltage (H11C1, H11C2, H11C3) Vom 200 Vo Reg=10 kQ, T,=100C, Ip=50nA (H11C4, H11C5, H11C6) Vom 400 Vio Rex=10 KQ, Th =100C, 1h= 150A Reverse voltage (H11C1, H11C2, H11C3) Vam 200 Vv Rox= 10 kQ, T,=100C, lp=50uA (H1104, H11C5, H11C6) Vem 400 Vv ok = 10 KO, T,= 100C, Ig=150uA On-state voltage Vim 11 13 Vv Lm=300 mA Off-state current (H1101, H1102, H11C3) lom 50 pA Voy=200 V, T,=100C, I|-=0, Rox= 10 kO (H1104, H1105, H11C6) lon 150 HA = Vom=400 V, T,=100C, |-=0, Rex=10 kO, Reverse current (H11C1, H11C02, H11C3) le 50 pA V,=200 V, T,=100C, I-=0 (H11C4, H1105, H11C6) la 150 pA Va=400 V, T,=100C, 1-=0 CHARACTERISTIC SYMBOL . . . TEST CONDITIONS Input current to trigger (H11C1, H11C2, H1104, H11C5) ler Vax =50 V, Rex=10 kD (H11C03, H11C6) lr Vax =50 V, Rex=10 kD (H11C1, H11C2, H1104, H11C5) le Vax= 100 V, Rex=27 kD (H11C3, H11C6) le Vx= 100 V, Rox=27 kQ Coupled dv/dt, input to output (fig. 13) dv/dt Input to output capacitance Input to output voltage=0 f=1 MHz UNITS TEST CONDITIONS | CHARACTERISTIC SYMBOL Surge isolation voltage Vieo 7500 Vv 1 Minute Isolation voltage Viso 5300 Vv 1 Minute Isolation resistance Riso 10" ohms V,.=500 VDCOPTOELECTRONICS PHOTO SCR OPTOCOUPLERS NORMALIZED TO Vg *50V Rg, *10K Ty 225" Ipy "NORMALIZED INPUT CURRENT TO TRIGGER | 5 10 30. wo 8=-200 Vax ANODE TO CATHODE VOLTAGE - VOLTS Figure 1. Input Current To Trigger vs. Anode-Cathode Voltage ST2077 Tp7 NORMALIZED INPUT CURRENT TO TRIGGER NORMALIZED TO Vak SOV Rex 10K Ta =28%e 60-40-20 0 a0 EJ 80 Ty -AMBIENT TEMPERATURE -*. Figure 2. Input Current To Trigger vs, Temperature 100 120 $T2078 1 NORWALZED TO Van t50 PERCENTILE Fax 10K Ta 128 Tpy-MORMALIZED INPUT CURRENT TO TRIGGER Ty AMBIENT TEMPERATURE -*C Vak *50V Rg 10K = 25C Tpy- NORMALIZED INPUT CURRENT TO TRIGGER i 2 4 6 610 20 40 60 oo 6200) = 400 1oco S$T2079 PULSE WIDTH-MIGRO SECONDS ST2080 Figure 3. input Current to Trigger Figure 4. Input Current to Trigger Distribution vs. Temperature vs. Pulse Width < Vix * SOVOLTS L ton Sta tir z i ol pnae g 0 s 3 E c i $ Ss 61.0 2 1 & 10 20 30 60 70 ao 30 KO Ip - INPUT CURRENT - MILLIAMPERES: Vp- VOLTS Vp- FORWARD VOLTAGE - VOLTS Figure 5. Turn on Time vs. Input Current $T2081 Figure 6. Input Characteristics 812082 ies. Vp 2-27OPTOELECTRONICS PHOTO SCR OPTOCOUPLERS NOTE: (HLEAD TEMPERATURE MEASURED AT THE WIDEST PORTION OF THE SCR ANODE LEAD (2) AMBIENT TEMPERATURE MEASURED AT & POINT V2" FROM THE DEVICE TO AMBIENT WATT TRANSIENT THERMAL IMPEDANCE -C PER Ty-HOLOING CURRENT - MICROAMPERES Yaw? SOV a 6080 , ODO gp 0004 O01 aDz 904 01 02 4 0 20 40 Wo Ty AMBIENT TEMPERATURE-*C 872083 TIME-SECONDS ST2084 Figure 7. Holding Current vs. Temperature Figure 8. Maximum Transient Thermal Impedance NORMALIZED TO Vay 130 Ta 125C LEAD TEMP OC CURRENT \ MAXIMUM ALLOWABLE TEMPERATURE ~ "C N a 2 = & g z 3 2 3 8 g AME LEAD TEMP DC CURRENT 2 SINE WAVE AVERAGE 1a Ty CAMBIENT TEMPERATURE-*C $T2085 ON STATE CURRENT - AMPERES ST2086 Figure 9. Off State Forward Current vs. Temperature Figure 10. On State Current vs. Maximum Allowable Temperature = Rg 3000 JUNCTION TEMPERATURE + 25C 4viqCRITICAL RATE OF RISE APPLIED FORWARD VOLTAGE - Voits/y sac 7 ON-STATE CURRENT AMPERES INCREASES TO FORWARD " Vy~ON-STATE VOLTAGE -vours Ty AMBIENT TEMPERATURE -C ST2087 ; a ST2088 Figure 11. dV/at vs. Temperature Figure 12, On-State CharacteristicsCPTIDELECTRONICS PHOTO SCR OPTOCOUPLERS 10A, T?L COMPATIBLE, SOLID STATE RELAY Use of the H11C4 for high sensitivity, 5300V isolation capability, provides this highly reliable solid state relay design. This design is compat- ible with 74, 74S and 74H series TL logic systems inputs and 220V AC loads up to 10A. 100.0. s47n AN O.1mF "CONTACT" 220V AC SCl460 $+__-__--0 47 INSO6O (4) $T2047 25W LOGIC INDICATOR LAMP DRIVER The high surge capability and non-reactive input characteristics of the H11C allow it to directly couple, without buffers, T?L and DTL logic to indicator and alarm devices, without danger of introducing noise and logic glitches. INDICATOR LAMP 400V SYMMETRICAL TRANSISTOR COUPLER Use of the high voltage PNP portion of the H11C provides a 400V transistor capable of conducting positive and negative signals with current transfer ratios over 1%. This function is useful in remote instrumentation, high voltage power supplies and test equipment. Care EXPONENTIAL RAMP GEN. should be taken not to exceed the H11C 400 mW power dissipation sT2049 rating when used at high voltages. Fig 13. Coupled dv/dt- Test circuit Vp = 800 Volts tp =.010 Seconds f = 25 Hertz +100 VAC Ta =25C 1002 ST HIIC4 rate 1 LO Vp t. ro t zYion | *4 Vp | 4 L_j_-_|4 - ioK LO OSCILLOSCOPE ST2050