2N6661JAN/JANTX/JANTXV
Vishay Siliconix
Document Number: 70225
S-04279—Rev. B, 16-Jul-01 www.vishay.com
11-1
JAN Qualified N-Channel 90-V (D-S) MOSFETs
PRODUCT SUMMARY
V(BR)DSS Min (V) rDS(on) Max (W)VGS(th) (V) ID (A)
90 4 @ VGS = 10 V 0.8 to 2 0.86
FEATURES BENEFITS APPLICATIONS
DMilitary Qualified
DLow On-Resistance: 3.6 W
DLow Threshold: 1.6 V
DLow Input Capacitance: 35 pF
DFast Switching Speed: 6 ns
DLow Input and Output Leakage
DGuaranteed Reliability
DLow Offset Voltage
DLow-Voltage Operation
DEasily Driven Without Buffer
DHigh-Speed Circuits
DLow Error Voltage
DMilitary Applications
DDirect Logic-Level Interface: TTL/CMOS
DDrivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
DBattery Operated Systems
DSolid-State Relays
1
2 3
TO-205AD
(TO-39)
Top View
DG
S
Device Marking
Side View
JAN2N6661*
“S” fllxxyy
“S” = Siliconix Logo
f = Factory Code
ll = Lot T raceability
xxyy = Date Code
*Note: or JANTX2N6661
JANTXV2N6661
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 90
Gate-Source Voltage VGS "20 V
_TC = 25_C0.86
Continuous Drain Current (TJ = 150_C) TC = 100_CID0.54 A
Pulsed Drain CurrentaIDM 3
TC = 25_C6.25
Power Dissipation TA = 25_CPD0.725 W
Thermal Resistance, Junction-to-AmbientbRthJA 170 _
Thermal Resistance, Junction-to-Case RthJC 20 _C/W
Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 _C
Notes
a. Pulse width limited by maximum junction temperature.
b. Not required by Military Spec.
2N6661JAN/JANTX/JANTXV
Vishay Siliconix
www.vishay.com
11-2 Document Number: 70225
S-04279—Rev. B, 16-Jul-01
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min Typ
NO TAG Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 10 mA90 125
VDS = VGS, ID = 1 mA 0.8 1.6 2
Gate-Threshold Voltage VGS(th) TA = –55_C1.8 2.5 V
TA = 125_C0.3 1.3
VDS = 0 V, VGS = "20 V "100
Gate-Body Leakage IGSS TA = 125_C"500 nA
VDS = 72 V, VGS = 0 V 1
m
Zero Gate Voltage Drain Current IDSS TA = 125_C100 mA
On-State Drain CurrentbID(on) VDS = 10 V, VGS = 10 V 1.8 mA
VGS = 5 V, ID = 0.3 A 3.8 5.3
Drain-Source On-ResistancebrDS(on) VGS = 10 V, ID = 1 A 3.6 4 W
TA = 125_C6.7 7.5
Forward T ransconductancebgfs VDS = 7.5 V, ID = 0.475 A 170 340 mS
Diode Forward Voltage VSD IS = 0.86 A, VGS = 0 V 0.7 0.9 1.4 V
Dynamic
Input Capacitance Ciss 35 50
Output Capacitance Coss VDS = 25 V, VGS = 0 V 15 40
Reverse Transfer Capacitance Crss
VDS = 25 V, VGS = 0 V
f = 1 MHz 2 10 pF
Drain-Source Capacitance Cds 30
Switchingc
T urn-On Time tON VDD = 25 V, RL = 23 W6 10
Turn-Off Time tOFF
VDD = 25 V, RL = 23
W
ID ^ 1 A, VGEN = 10 V, RG = 25 W8 10 ns
Notes
a. For DESIGN AID ONLY, not subject to production testing. VNDQ09
b. Pulse test: PW v300 ms duty cycle v2%.
c. Switching time is essentially independent of operating temperature.
d. For typical characteristics curves see the 2N6661/VN88AFD data sheet.
