UNISONIC TECHNOLOGIES CO., LTD
2SB1260
PNP SILICON TRANSISTOR
www.unisonic.com.tw 1 of 4
Copyright © 2008 Unisonic Technologies Co., Ltd QW-R208-017,E
POWER TRANSISTOR
DESCRIPTION
The UTC 2SB1260 is a epitaxial planar type PNP silicon
transistor.
FEATURES
* High breakdown voltage and high current.
* BVCEO= -80V, IC= -1A
* Good hFE linearity.
* Low VCE(SAT)
Lead-free: 2SB1260L
Halogen-free: 2SB1260G
ORDERING INFORMATION
Ordering Number Pin Assignment
Normal Lead Free Halogen Free Package 1 2 3 Packing
2SB1260-x-AB3-R 2SB1260L-x-AB3-R 2SB1260G-x-AB3-R SOT-89 B C E Tape Reel
2SB1260-x-TN3-R 2SB1260L-x-TN3-R 2SB1260G-x-TN3-R TO-252 B C E Tape Reel
2SB1260
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 4
www.unisonic.com.tw QW-R208-017,E
ABSOLUATE MAXIUM RATINGS (Ta = 25℃)
PARAMETER SYMBOL RATINGS UNIT
Collector -Base Voltage VCBO -80 V
Collector -Emitter Voltage VCEO -80 V
Emitter -Base Voltage VEBO -5 V
Peak Collector Current (single pulse, Pw=100ms) ICM -2 A
DC Collector Current IC -1 A
SOT-89 0.5 W
Power Dissipation TO-252 PD 1.9 W
Junction Temperature TJ +150 ℃
Storage Temperature TSTG -40 ~ +150 ℃
Note 1. Printed circuit board,1.7mm thick, collector copper plating 100mm2 or larger.
2. Absolute maximum ratings are those valu es beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector Base Breakdo wn Voltage BVCBO IC= -50μA -80 V
Collector Emitter Breakdown Voltage BVCEO IC= -1mA -80 V
Emitter Base Breakdown Voltage BVEBO IE= -50μA -5 V
Collector Cut-Off Current ICBO V
CB=-60V -1
μA
Emitter Cut-Off Current IEBO V
EB=-4V -1
μA
DC Current Gain(Note 1) hFE V
CE=-3V, IOUT=-0.1A 82 390
Collector-Emitter Saturation Voltage VCE(SAT) IC=-500mA, IB=-50mA -0.4 V
Transition Freq uency fT V
CE= -5V, IE=50mA, f=30MHz 100 MHz
Output Capacitance Cob VCB=-10V, IE=0, f=1MHz 25 pF
Note 1: Pulse test: PW<300μs, Duty Cycle<2%
CLASSIFICATION OF hFE
RANK P Q R
RANGE 82 ~ 180 120 ~ 270 180 ~ 390
2SB1260
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 3 of 4
www.unisonic.com.tw QW-R208-017,E
■ TYPICAL CHARACTERICS
Collector Current, Ic(mA)
DC Current Gain, hFE
Collector Current, Ic(mA)
Collector Saturation Voltage, VCE(SAT) ( V)
Collector Output Capacitance, Cob (pF)
Transition Frequency, fT(MHz)
2SB1260
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 4 of 4
www.unisonic.com.tw QW-R208-017,E
TYPICAL CHARACTERICS(Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UT C products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
m alfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this docum ent does not f orm part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.
