NTE2408 Silicon NPN Transistor General Purpose Amp, Surface Mount (Compl to NTE2409) Description: The NTE2408 is a silicon NPN general purpose transistor in a SOT-23 type surface mount package designed for use in driver stages of audio amplifiers in thick and thin-film hybrid circuits. Absolute Maximum Ratings: Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Peak Emitter Current, IEM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Peak Base Current, IBM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Total Power Dissipation (TA = +60C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Tab, RthJT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W Thermal Resistance, Tab-to-Soldering Points, RthTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280K/W Thermal Resistance, Soldering Points-to-Ambient (Note 1), RthSA . . . . . . . . . . . . . . . . . . . . 90K/W Note 1. Mounted on a ceramic substrate .314 (8mm) x .393 (10mm) x .027 (0.7mm). Electrical Characteristics: (TJ = +25C unless otherwise specified) Parameter Collector Cutoff Current Base-Emitter Voltage Collector-Emitter Saturation Voltage Symbol ICBO VBE VCE(sat) Test Conditions Min Typ Max Unit VCB = 30V, IE = 0 - - 15 nA VCB = 30V, IE = 0, TA = +150C - - 5 A VCE = 5V, IC = 2mA, Note 2 580 660 700 mV VCE = 5V, IC = 10mA, Note 2 - - 770 mV IC = 10mA, IB = 0.5mA, Note 3 - 90 250 mV IC = 100mA, IB = 5mA, Note 3 - 200 600 mV Note 2. VBE decreases by about 2mV/K with increasing temperature. Note 3. VBE(sat) decreases by about 1.7mV with increasing temperature. Electrical Characteristics (Cont'd): (TJ = +25C unless otherwise specified) Parameter Symbol Base-Emitter Saturation Voltage VBE(sat) DC Current Gain hFE Test Conditions Min Typ Max Unit IC = 10mA, IB = 0.5mA, Note 3 - 700 - mV IC = 100mA, IB = 5mA, Note 3 - 900 - mV VCE = 5V, IC = 10A - 150 200 VCE = 5V, IC = 2mA - 290 450 Transition Frequency fT VCE = 5V, IC = 10mA, f = 35MHz - 300 - MHz Collector Capacitance Cc VCB = 10V, IE = Ie = 0, f = 1MHz - 2.5 - pF Small-Signal Current Gain hfe VCE = 5V, IC = 2mA 125 - 500 Noise Figure NF VCE = 5V, IC = 200A, f = 1kHz, B = 200Hz - 2 10 Note 3. VBE(sat) decreases by about 1.7mV with increasing temperature. .016 (0.48) C B .098 (2.5) Max E .037 (0.95) .074 (1.9) .118 (3.0) Max .051 (1.3) .043 (1.1) .007 (0.2) dB