NTE2408
Silicon NPN Transistor
General Purpose Amp, Surface Mount
(Compl to NTE2409)
Description:
The NTE2408 is a silicon NPN general purpose transistor in a SOT–23 type surface mount package
designed for use in driver stages of audio amplifiers in thick and thin–film hybrid circuits.
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO 80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, VCES 80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, VCEO 65V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEBO 6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
Continuous 100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 200mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Emitter Current, IEM 200mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Base Current, IBM 200mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (TA = +60°C, Note 1), Ptot 200mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature, TJ+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –65 ° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Tab, RthJT 60K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Tab–to–Soldering Points, RthTS 280K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Soldering Points–to–Ambient (Note 1), RthSA 90K/W. . . . . . . . . . . . . . . . . . . .
Note 1. Mounted on a ceramic substrate .314 (8mm) x .393 (10mm) x .027 (0.7mm).
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current ICBO VCB = 30V, IE = 0 – – 15 nA
VCB = 30V, IE = 0, TA = +150°C – – 5 µA
Base–Emitter Voltage VBE VCE = 5V, IC = 2mA, Note 2 580 660 700 mV
VCE = 5V, IC = 10mA, Note 2 – – 770 mV
Collector–Emitter Saturation Voltage VCE(sat) IC = 10mA, IB = 0.5mA, Note 3 – 90 250 mV
IC = 100mA, IB = 5mA, Note 3 – 200 600 mV
Note 2. VBE decreases by about 2mV/K with increasing temperature.
Note 3. VBE(sat) decreases by about 1.7mV with increasing temperature.
Electrical Characteristics (Cont’d): (TJ = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Base–Emitter Saturation Voltage VBE(sat) IC = 10mA, IB = 0.5mA, Note 3 –700 –mV
IC = 100mA, IB = 5mA, Note 3 –900 –mV
DC Current Gain hFE VCE = 5V, IC = 10µA–150 200
VCE = 5V, IC = 2mA –290 450
Transition Frequency fTVCE = 5V, IC = 10mA, f = 35MHz –300 –MHz
Collector Capacitance CcVCB = 10V, IE = Ie = 0, f = 1MHz –2.5 –pF
Small–Signal Current Gain hfe VCE = 5V, IC = 2mA 125 –500
Noise Figure NF VCE = 5V, IC = 200µA, f = 1kHz,
B = 200Hz –2 10 dB
Note 3. VBE(sat) decreases by about 1.7mV with increasing temperature.
.098
(2.5)
Max
.074 (1.9)
.118 (3.0) Max .051
(1.3)
.043 (1.1)
.007 (0.2)
.016 (0.48)
.037 (0.95)
B
C
E
