ON Semiconductor NPN Darlington Complementary Silicon Power Transistors 2N6282 . . . designed for general-purpose amplifier and low-frequency switching applications. 2N6284* thru * High DC Current Gain @ IC = 10 Adc -- * * PNP 2N6285 hFE = 2400 (Typ) -- 2N6282, 2N6283, 2N6284 = 4000 (Typ) -- 2N6285, 2N6286, 2N6287 Collector-Emitter Sustaining Voltage -- VCEO(sus) = 60 Vdc (Min) -- 2N6282, 2N6285 = 80 Vdc (Min) -- 2N6283, 2N6286 = 100 Vdc (Min) -- 2N6284, 2N6287 Monolithic Construction with Built-In Base-Emitter Shunt Resistors thru 2N6287 * IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIII III III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIII III III IIIIIIIIIII IIII III IIII III III IIIIIIIIIII IIII III IIII III III IIIIIIIIIII IIII IIIIIIII III III IIII III IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII IIIIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III *ON Semiconductor Preferred Device DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80, 100 VOLTS 160 WATTS *MAXIMUM RATINGS Symbol 2N6282 2N6285 2N6283 2N6286 2N6284 2N6287 Unit VCEO 60 80 100 Vdc Collector-Base Voltage VCB 60 80 100 Vdc Emitter-Base Voltage Rating Collector-Emitter Voltage VEB 5.0 Vdc Collector Current -- Continuous Peak IC 20 40 Adc Base Current IB 0.5 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 160 0.915 Watts W/C TJ,Tstg -65 to + 200 C Operating and Storage Junction Temperature Range CASE 1-07 TO-204AA (TO-3) *THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case *Indicates JEDEC Registered Data. Symbol Max Unit RJC 1.09 C/W PD, POWER DISSIPATION (WATTS) 160 140 120 100 80 60 40 20 0 0 25 75 150 50 100 125 TC, CASE TEMPERATURE (C) 175 200 Figure 1. Power Derating Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 2 110 Publication Order Number: 2N6282/D 2N6282 thru 2N6284 2N6285 thru 2N6287 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III *ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 60 80 100 -- -- -- -- -- -- 1.0 1.0 1.0 -- -- 0.5 5.0 -- 2.0 750 100 18,000 -- -- -- 2.0 3.0 Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 0.1 Adc, IB = 0) VCEO(sus) 2N6282, 2N6285 2N6283, 2N6286 2N6284, 2N6287 Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) Vdc ICEO 2N6282, 2N6285 2N6283, 2N6286 2N6284, 2N6287 Collector Cutoff Current (VCE = Rated VCB, VBE(off) = 1.5 Vdc) (VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150C) ICEX Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO mAdc mAdc mAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 10 Adc, VCE = 3.0 Vdc) (IC = 20 Adc, VCE = 3.0 Vdc) hFE -- Collector-Emitter Saturation Voltage (IC = 10 Adc, IB = 40 mAdc) (IC = 20 Adc, IB = 200 mAdc) VCE(sat) Vdc Base-Emitter On Voltage (IC = 10 Adc, VCE = 3.0 Vdc) VBE(on) -- 2.8 Vdc Base-Emitter Saturation Voltage (IC = 20 Adc, IB = 200 mAdc) VBE(sat) -- 4.0 Vdc |hfe| 4.0 -- MHz -- -- 400 600 300 -- DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Cob 2N6282,83,84 2N6285,86,87 Small-Signal Current Gain (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz) *Indicates JEDEC Registered Data. (1) Pulse test: Pulse Width = 300 s, Duty Cycle = 2% hfe http://onsemi.com 111 pF -- 2N6282 thru 2N6284 2N6285 thru 2N6287 10 7.0 5.0 VCC - 30 V V1 APPROX - 12 V 25 s tr, tf 10 ns DUTY CYCLE = 1.0% RC ts + 4.0 V FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES 2.0 tf r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.3 0.2 0.2 0.1 0.07 0.3 VCC = 30 Vdc I /I = 250 0.2 C B IB1 = IB2 td @ VBE(off) = 0 V T = 25C 0.1 J 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.2 0.3 IC, COLLECTOR CURRENT (AMP) 20 Figure 3. Switching Times 0.1 RJC(t) = r(t) RJC RJC = 1.09C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 0.05 0.02 0.05 0.03 0.01 0.02 SINGLE PULSE 0.01 0.01 tr 1.0 0.7 0.5 Figure 2. Switching Times Test Circuit 1.0 0.7 0.5 2N6282/84 (NPN) 2N6285/87 (PNP) 3.0 SCOPE t, TIME (s) RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE e.g., 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA TUT RB V2 APPROX + 8.0 V D1 51 8.0 k 50 0 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) Figure 4. Thermal Response http://onsemi.com 112 20 30 50 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 100 200 300 500 1000 2N6282 thru 2N6284 2N6285 thru 2N6287 ACTIVE-REGION SAFE OPERATING AREA 50 0.5 ms 10 1.0 ms 5.0 5.0 ms dc 2.0 1.0 TJ = 200C 0.5 0.2 SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMAL LIMITATION @ TC = 25C SINGLE PULSE 0.1 0.05 2.0 5.0 10 20 50 20 10 1.0 ms 5.0 5.0 ms dc 2.0 TJ = 200C 1.0 0.5 0.2 SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMAL LIMITATION @ TC = 25C SINGLE PULSE 0.1 100 0.1 ms 0.5 ms 0.05 2.0 5.0 10 20 50 20 0.5 ms 10 1.0 ms 5.0 5.0 ms dc 2.0 1.0 TJ = 200C 0.5 SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMAL LIMITATION @ TC = 25C SINGLE PULSE 0.2 0.1 100 0.05 2.0 5.0 10 20 50 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. 2N6282, 2N6285 Figure 6. 2N6283, 2N6286 Figure 7. 2N6284, 2N6287 pulse limits are valid for duty cycles to 10% provided TJ(pk) < 200C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e. the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 5, 6, and 7 is based on TJ(pk) = 200C; TC is variable depending on conditions. Second breakdown 1000 10,000 TJ = 25C VCE = 3.0 Vdc IC = 10 A 5000 2000 1000 500 200 100 TJ = 25C 700 C, CAPACITANCE (PF) hFE, SMALL-SIGNAL CURRENT GAIN IC, COLLECTOR CURRENT (AMP) 20 50 0.1 ms 0.1 ms IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) 50 500 300 Cib Cob 200 50 10 2N6282/84 (NPN) 2N6285/87 (PNP) 2N6282/84 (NPN) 2N6285/87 (PNP) 20 1.0 2.0 5.0 10 20 50 100 f, FREQUENCY (kHz) 200 100 0.1 0.2 500 1000 Figure 8. Small-Signal Current Gain 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 9. Capacitance http://onsemi.com 113 50 100 2N6282 thru 2N6284 2N6285 thru 2N6287 NPN 2N6282, 2N6283, 2N6284 PNP 2N6285, 2N6286, 2N6287 20,000 VCE = 3.0 V 30,000 20,000 VCE = 3.0 V TJ = 150C 10,000 TJ = 150C 7000 5000 3000 2000 1000 700 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 10,000 25C -55 C 500 300 200 5.0 7.0 10 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 0.2 0.3 7000 5000 25C 3000 2000 -55 C 1000 700 500 300 0.2 0.3 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) 20 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 10. DC Current Gain 3.0 TJ = 25C 2.6 IC = 5.0 A 10 A 15 A 2.2 1.8 1.4 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 50 3.0 TJ = 25C 2.6 IC = 5.0 A 15 A 10 A 2.2 1.8 1.4 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 50 Figure 11. Collector Saturation Region 3.0 3.0 TJ = 25C 2.5 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) TJ = 25C 2.0 1.5 1.0 VBE(sat) @ IC/IB = 250 VBE @ VCE = 3.0 V 2.5 2.0 1.5 VBE(sat) @ IC/IB = 250 1.0 VBE @ VCE = 3.0 V VCE(sat) @ IC/IB = 250 0.5 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 VCE(sat) @ IC/IB = 250 0.5 20 0.2 0.3 IC, COLLECTOR CURRENT (AMP) 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) Figure 12. "On" Voltages http://onsemi.com 114 20 2N6282 thru 2N6284 2N6285 thru 2N6287 PNP 2N6285, 2N6286, 2N6287 +5.0 +4.0 +3.0 V, TEMPERATURE COEFFICIENTS (mV/C) V, TEMPERATURE COEFFICIENTS (mV/C) NPN 2N6282, 2N6283, 2N6284 hFE@VCE 3.0V *APPLIES FOR IC/IB 250 +2.0 25C to 150C +1.0 -55 C to + 25C 0 -1.0 *VC for VCE(sat) -2.0 -3.0 25C to + 150C VB for VBE -55 C to + 25C -4.0 -5.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 +5.0 +4.0 +3.0 hFE@VCE 3.0V 250 +2.0 25C to 150C +1.0 -55 C to + 25C 0 -1.0 *VC for VCE(sat) -2.0 25C to + 150C VB for VBE -3.0 -4.0 -5.0 20 *APPLIES FOR IC/IB -55 C to + 25C 0.2 0.3 0.5 IC, COLLECTOR CURRENT (AMP) 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMP) Figure 13. Temperature Coefficients 104 103 VCE = 30 V IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 105 103 TJ = 150C 102 100C 101 REVERSE FORWARD 100 VCE = 30 V 102 TJ = 150C 101 100 100C 10-1 REVERSE 10-2 FORWARD 25C 25C 10-1 -0.6 -0.4 -0.2 0 +0.2 +0.4 +0.6 +0.8 +1.0 10-3 +0.6 +0.4 +1.2 + 1.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) +0.2 0 -0.2 -0.4 -0.6 -0.8 -1.0 VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 14. Collector Cut-Off Region NPN 2N6282 2N6283 2N6284 COLLECTOR PNP 2N6285 2N6286 2N6287 BASE COLLECTOR BASE 8.0 k 60 8.0 k EMITTER 60 EMITTER Figure 15. Darlington Schematic http://onsemi.com 115 -1.2 -1.4