VDRM IT(AV)M IT(RMS) ITSM VT0 rT = 5200 V = 2760 A = 4340 A = 42x103 A = 1V = 0.225 m Phase Control Thyristor 5STP 25L5200 Doc. No. 5SYA1008-05 Jan. 11 Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate Blocking Maximum rated values 1) Parameter Symbol Conditions Max. surge peak forward and VDSM, tp = 10 ms, f = 5 Hz reverse blocking voltage Tvj = 5...125C, Note 1 VRSM Max repetitive peak forward VDRM, and reverse blocking voltage VRRM Max crest working forward and reverse voltages Critical rate of rise of commutating voltage VDWM, VRWM dv/dtcrit 5STP 25L5200 5200 Unit V 5200 V 3470 V 2000 V/s f = 50 Hz, tp = 10 ms, tp1 = 250 s, Tvj = 5...125C, Note 1, Note 2 VAK VDRM,VRRM tp1 VDWM,VRWM tp t Exp. to 3470 V, Tvj = 125C Characteristic values Parameter Forward leakage current Symbol Conditions IDRM VDRM, Tvj = 125C Reverse leakage current IRRM min typ VRRM, Tvj = 125C max 400 Unit mA 400 mA max 84 Unit kN Note 1: Voltage de-rating factor of 0.11% per C is applicable for Tvj below +5 C Note 2: Recommended minimum ratio of VDRM / VDWM or VRRM / VRWM = 2. See App. Note 5SYA 2051. Mechanical data Maximum rated values 1) Parameter Mounting force Symbol Conditions FM min 63 typ 70 Acceleration a Device unclamped 50 m/s2 Acceleration a Device clamped 100 m/s2 Characteristic values Parameter Weight Symbol Conditions m Housing thickness H Surface creepage distance DS 36 mm Air strike distance Da 15 mm FM = 70 kN, Ta = 25 C min typ 26.2 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. max 1.45 Unit kg 26.8 mm 5STP 25L5200 On-state Maximum rated values 1) Parameter Average on-state current Symbol Conditions IT(AV)M Half sine wave, Tc = 70 C RMS on-state current IT(RMS) Peak non-repetitive surge current ITSM Limiting load integral It Peak non-repetitive surge current ITSM Limiting load integral It min typ max 2760 Unit A 4340 tp = 10 ms, Tvj = 125 C, sine wave after surge: VD = VR= 0 V 42x10 2 tp = 8.3 ms, Tvj = 125 C, sine wave after surge: VD = VR= 0 V 2 A 3 A 2 8.82x106 As 45x103 A 8.4x106 As 2 Characteristic values Parameter On-state voltage Symbol Conditions VT IT = 3000 A, Tvj = 125 C Threshold voltage V(T0) Slope resistance rT Holding current IH Latching current IL min typ IT = 1300 A - 4000 A, Tvj= 125 C max 1.7 Unit V 1 V 0.225 m Tvj = 25 C 125 mA Tvj = 125 C 60 mA Tvj = 25 C 500 mA Tvj = 125 C 250 mA max 250 Unit A/s 1000 A/s Switching Maximum rated values 1) Parameter Critical rate of rise of onstate current Symbol Conditions di/dtcrit Tvj = 125 C, Critical rate of rise of onstate current di/dtcrit Circuit-commutated turn-off tq time min typ Cont. ITRM = 3000 A, f = 50 Hz VD 0.67 VDRM, Cont. IFG = 2 A, tr = 0.5 s f = 1Hz Tvj = 125C, ITRM = 2000 A, VR = 200 V, diT/dt = -1.5 A/s, VD 0.67VDRM, dvD/dt = 20 V/s 700 s Characteristic values Parameter Reverse recovery charge Reverse recovery current Gate turn-on delay time Symbol Conditions Qrr Tvj = 125C, ITRM = 2000 A, V R = 200 V, IRM diT/dt = -1.5 A/s tgd min 3200 typ 50 Tvj = 25 C, VD = 0.4VRM, IFG = 2 A, tr = 0.5 s max 4400 Unit As 130 A 3 s ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1008-05 Jan. 11 page 2 of 7 5STP 25L5200 Triggering Maximum rated values 1) Parameter Peak forward gate voltage Symbol Conditions VFGM Peak forward gate current min typ max 12 Unit V IFGM 10 A Peak reverse gate voltage VRGM 10 V Average gate power loss PG(AV) see Fig. 9 W Characteristic values Parameter Gate-trigger voltage Symbol Conditions VGT Tvj = 25 C min typ max 2.6 Gate-trigger current IGT Tvj = 25 C Gate non-trigger voltage VGD VD = 0.4 x VDRM, Tvjmax = 125 C 0.3 V Gate non-trigger current IGD VD = 0.4 x VDRM, Tvjmax = 125C 10 mA 400 Unit V mA Thermal Maximum rated values 1) Parameter Operating junction temperature range Symbol Conditions Tvj min Storage temperature range Tstg typ -40 max 125 Unit C 140 C max 7 Unit K/kW Characteristic values Parameter Symbol Conditions Thermal resistance junction Rth(j-c) Double-side cooled to case Fm = 63...84 kN min typ Rth(j-c)A Anode-side cooled Fm = 63...84 kN 14 K/kW Rth(j-c)C Cathode-side cooled Fm = 63...84 kN 14 K/kW Double-side cooled Fm = 63...84 kN 1.5 K/kW Single-side cooled Fm = 63...84 kN 3 K/kW Thermal resistance case to Rth(c-h) heatsink Rth(c-h) Analytical function for transient thermal impedance: n Z th(j- c) (t) = R i (1- e- t/ i ) i 1 i 1 2 3 4 Ri(K/kW) 4.700 0.853 1.070 0.490 i(s) 0.5506 0.0790 0.0107 0.0028 Fig. 1 Transient thermal impedance (junction-tocase) vs. time ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1008-05 Jan. 11 page 3 of 7 5STP 25L5200 On-state characteristic model: V A B I C ln(I 1) D I T max T T T Valid for iT = 500 - 10000 A A -6.184x10 B -3 220.0x10 C -6 173.3x10 D -3 -6.405x10-3 Fig. 2 On-state characteristics, Tj=125C, 10ms half sine Fig. 3 On-state voltage characteristics Fig. 4 On-state power dissipation vs. mean on-state current, turn-on losses excluded Fig. 5 Max. permissible case temperature vs. mean on-state current, switching losses ignored ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1008-05 Jan. 11 page 4 of 7 5STP 25L5200 Fig. 6 Surge on-state current vs. pulse length, half-sine wave IG (t) 100 % 90 % IGM IGM IGon diG/dt tr tp(IGM) Fig. 7 Surge on-state current vs. number of pulses, half-sine wave, 10 ms, 50Hz 2..5 A 1.5 IGT 2 A/s 1 s 5...20 s diG/dt IGon 10 % t tr tp (IGM) tp (IGon) Fig. 8 Recommended gate current waveform Fig. 9 Max. peak gate power loss Fig. 10 Reverse recovery charge vs. decay rate of on-state current Fig. 11 Peak reverse recovery current vs. decay rate of on-state current ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1008-05 Jan. 11 page 5 of 7 5STP 25L5200 Turn-on and Turn-off losses Fig. 12 Turn-on energy, half sinusoidal waves Fig. 13 Turn-on energy, rectangular waves Fig. 14 Turn-off energy, half sinusoidal waves Fig. 15 Turn-off energy, rectangular waves Total power loss for repetitive waveforms: IT(t) IT(t), V(t) PTOT PT Won f Woff f -diT/dt where t Qrr V(t) -IRRM -V0 T 1 PT IT VT (IT ) dt T 0 -dv/dtcom -VRRM Fig. 16 Current and voltage waveforms at turn-off Fig. 17 Relationships for power loss ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1008-05 Jan. 11 page 6 of 7 5STP 25L5200 Fig. 18 Device Outline Drawing Related documents: 5SYA 2020 5SYA 2049 5SYA 2051 5SYA 2034 5SYA 2036 5SZK 9104 5SZK 9105 Design of RC-Snubber for Phase Control Applications Voltage definitions for phase control thyristors and diodes Voltage ratings of high power semiconductors Gate-Drive Recommendations for PCT's Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Specification of environmental class for pressure contact diodes, PCTs and GTO, STORAGE available on request, please contact factory Specification of environmental class for pressure contact diodes, PCTs and GTO, TRANSPORTATION available on request, please contact factory Please refer to http://www.abb.com/semiconductors for current version of documents. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1008-05 Jan. 11