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MBR20100CT — Dual High Voltage Schottky Rectifier
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
MBR20100CT Rev. A0 1
October 2010
MBR20100CT
Dual High Voltage Schottky Rectifier
Features
• Low Forward Voltage Drop
• Low Power Loss and High Efficiency
• High Surge Capability
• Rohs Compliant
• Matte Tin(Sn) Lead Finish
• Terminal Leads Surface is Corrosion Resistant
and can with stand to 260°C
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics* Ta = 25°C unless otherwise noted
* JESD51-10
Electrical Characteristics* Ta = 25°C unless otherwise noted
* DC Item are tested by Pulse Test : Pulse Width≤300μs, Duty Cycle≤2%
Symbol Parameter Value Unit
VRRM Maximum Repetiti ve Revers e Voltage 100 V
VRMaximum DC Reverse Voltage 100 V
IF(AV) Average Rec tifi ed Forward Current, Tc= 120°C10 (Per Leg)
20 (Per Device) A
IFSM Peak Forward Surge Current, 8.3mS Half Sine wave 150 A
TSTG Storage Temperature Range -55 to 150 °C
TJOperating Junction Temperature 150 °C
Symbol Parameter Max. Unit
RθJCThermal Resistance, Junction to Case per Leg 1.5 °C/W
RθJAThermal Resistance, Junction to Ambient per Leg 62.5 °C/W
Symbol Parameter Test Condition Min. Max. Unit
IRReverse Current VR
= 1 0 0 V
VR
= 1 0 0 V Tc = 25 °C
Tc = 125 °C0.2
5mA
VFForward Voltage
IF = 10 A
IF = 10 A
IF = 20 A
IF = 20 A
Tc = 25 °C
Tc = 125 °C
Tc = 25 °C
Tc = 125 °C
0.8
0.7
0.9
0.8
V
Mark : MBR20100CT
1 TO-220 PIN3
PIN1
PIN2
_
+
MBR20100CT — Dual High Voltage Schottky Rectifier
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
MBR20100CT Rev. A0 2
Typical Performance Characteristics
Figure 1. Forward Current Cha racteristics Figure 2. Reverse Leakage Current
Figure 3.Junction Capacitance Figure 4. Power Derating
0.01
0.1
1
10
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
TJ=125 oC
TJ=75 oC
TJ=25 oC
Forward Voltage Drop, VF[V]
Forward Current, IF[A]
20 40 60 80 100
0.01
0.1
1
10
100
1000
TJ=25 oC
TJ=75 oC
TJ=125 oC
Reverse Current, IR[uA]
Reverse Voltage, VR[V]
0246810
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
2
f=1mhz
Juntion Capacitance, C J[nF]
Reverse Voltage, VR[V]
0 25 50 75 100 125 150
0
5
10
15
20
25
30
DC
Average Forward Current, I F(AV)[A]
Case Temp erature, TC[oC]
MBR20100CT — Dual High Voltage Schottky Rectifier
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
MBR20100CT Rev. A0 3
Phisical Dimensions
TO-220 [ DUAL GAUGE ]
Dimensions in Millimeters
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I50
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