1. Product profile
1.1 General description
A 350 W LDMOS RF power transistor for broadca st transmitter app lications and industrial
applications. The excellent rug ged ness of th is d evice makes it ideal for dig ital and analog
transmitter applications.
[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
[2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
1.2 Features and benefits
Excellent ruggedness
Optimum thermal behavior and reliability, Rth(j-c) = 0.22 K/W
High power gain
High efficiency
Designed for broadband operation (470 MHz to 860 MHz)
Internal input matching for high gain and optimum broadband operation
Excellent reliability
Easy power control
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
1.3 Applications
Communication transmitter applications in the UHF band
Industrial applications in the UHF band
BLF884P; BLF884PS
UHF power LDMOS transistor
Rev. 2 — 16 December 2011 Product data sheet
Table 1. Application information
RF performance at VDS = 50 V unless otherwise specified.
Mode of operation f PL(AV) PL(M) GpDIMD3 IMDshldr PAR
(MHz) (W) (W) (dB) (%) (dBc) (dBc) (dB)
RF performance in a common source 860 MHz narrowband test circuit
2-tone, class-AB f1 = 860; f2= 860.1 150 - 21 46 32 - -
DVB-T (8k OFDM) 858 70 - 21 33 - 31[1] 8.2 [2]
RF performance in a common source 470 MHz to 860 MHz broadband test circuit
DVB-T (8k OFDM) 858 70 - 20 32 - 32 [1] 8.0 [2]
BLF884P_BLF884PS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 16 December 2011 2 of 15
NXP Semiconductors BLF884P; BLF884PS
UHF power LDMOS transistor
2. Pinning information
[1] Connected to flange.
3. Ordering information
4. Limiting values
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
BLF884P (SOT1121A)
1drain1
2drain2
3gate1
4gate2
5source [1]
BLF884PS (SOT1121B)
1drain1
2drain2
3gate1
4gate2
5source [1]
2
45
3
1
4
35
1
2sym117
4
5
3
21
4
35
1
2sym117
Table 3. Ordering information
Type number Package
Name Description Version
BLF884P - flanged LDMOST ceramic package;
2 mounting holes; 4 leads SOT1121A
BLF884PS - earless flanged LDMOST ceramic package;
4 leads SOT1121B
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 104 V
VGS gate-source voltage 0.5 +11 V
Tstg storage temperature 65 +150 C
Tjjunction temperature - 200 C
BLF884P_BLF884PS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 16 December 2011 3 of 15
NXP Semiconductors BLF884P; BLF884PS
UHF power LDMOS transistor
5. Thermal characteristics
[1] Rth(j-c) is measured under RF conditions.
6. Characteristics
[1] ID is the drain current.
[2] Capacitance values without internal matching.
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-c) thermal resistance from junction to case Tcase =80C; PL(AV) =70W [1] 0.22 K/W
Table 6. DC characteristics
Tj=25
C; per section unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS =0V; I
D= 1.2 mA [1] 104 - - V
VGS(th) gate-source threshold voltage VDS =10 V; I
D= 120 mA [1] 1.4 1.9 2.4 V
IDSS drain leakage current VGS =0V; V
DS =50V - - 1.4 A
IDSX drain cut-off current VGS =V
GS(th) +3.75 V;
VDS =10V -19- A
IGSS gate leakage current VGS =10V; V
DS = 0 V - - 140 nA
RDS(on) drain-source on-state resistance VGS =V
GS(th) +3.75 V;
ID=4.25A [1] - 240 - m
Ciss input capacitance VGS = 0 V; VDS =50V;
f=1MHz [2] - 105 - pF
Coss output capacitance VGS = 0 V; VDS =50V;
f=1MHz -34- pF
Crss reverse transfer capacitance VGS = 0 V; VDS =50V;
f=1MHz -0.7- pF
Table 7. RF characteristics
RF characteristics in NXP production narrow band test circuit; Tcase =25
C unless otherwise
specified.
Symbol Parameter Conditions Min Typ Max Unit
2-Tone, class-AB
VDS drain-source voltage - 50 - V
IDq quiescent drain current [1] -0.65- A
PL(AV) average output pow er f1= 860 MHz;
f2=860.1MHz 150 - - W
Gppower gain f1= 860 MHz;
f2=860.1MHz 20 21 - dB
Ddrain efficiency f1= 860 MHz;
f2=860.1MHz 42 46 - %
IMD3 third-order intermodulation distortion f1= 860 MHz;
f2=860.1MHz -32 28 dBc
BLF884P_BLF884PS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 16 December 2011 4 of 15
NXP Semiconductors BLF884P; BLF884PS
UHF power LDMOS transistor
[1] Idq for total device
[2] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
[3] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
6.1 Ruggedness in class-AB operation
The BLF884P and BLF 884PS are capable of withst anding a load mismatch corresponding
to VSWR of 40 : 1 through all phases under the following conditions: VDS =50V;
f = 860 MHz at rated power.
DVB-T (8k OFDM), class-AB
VDS drain-source voltage - 50 - V
IDq quiescent drain current [1] -0.65- A
PL(AV) average output pow er f = 858 MHz 70 - - W
Gppower gain f = 858 MHz 20 21 - dB
Ddrain efficiency f = 858 MHz 30 33 - %
IMDshldr intermodulation distortion shoulder f = 858 MHz [2] -31 27 dBc
PAR peak-to-average ratio f = 858 MHz [3] -8.2- dB
VGS = 0 V; f = 1 MHz.
Fig 1. Output cap ac itance as a function of drain-source voltage; typical values per
section
Table 7. RF characteristics …continued
RF characteristics in NXP production narrow band test circuit; Tcase =25
C unless otherwise
specified.
Symbol Parameter Conditions Min Typ Max Unit
001aao028
VDS (V)
0604020
100
50
150
200
Coss
(pF)
0
BLF884P_BLF884PS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 16 December 2011 5 of 15
NXP Semiconductors BLF884P; BLF884PS
UHF power LDMOS transistor
7. Application information
7.1 Broadband RF figures
7.1.1 DVB-T
PL(AV) = 70 W; VDS = 50 V; IDq = 0.65 A; measured in a
common source broadband test circuit as described in
Section 8.
PL(AV) = 70 W; VDS = 50 V; IDq = 0.65 A; measured in a
common source broadband test circuit as described in
Section 8.
Fig 2. DVB-T power gain and intermodulatio n
distortion shoulder as function of frequency;
typical valu e s
Fig 3. DVB-T peak-to-average ratio and drain
efficiency as function of frequency;
typical values
f (MHz)
400 900800600 700500
001aao029
16
12
20
24
Gp
(dB)
8
-30
-40
-20
-10
IMDshldr
(dBc)
-50
Gp
IMDshldr
f (MHz)
400 900800600 700500
001aao030
7.5
6.5
8.5
9.5
PAR
(dB)
5.5
30
20
40
50
ηD
(%)
10
PAR
ηD
BLF884P_BLF884PS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 16 December 2011 6 of 15
NXP Semiconductors BLF884P; BLF884PS
UHF power LDMOS transistor
7.2 Impedance information
Fig 4. Definition of transistor impedance
Table 8. Typical push-pull impedance
Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL(AV) = 70 W (DVB-T).
f ZiZL
MHz
300 0.984 j3.485 8.315 + j1.246
325 1.009 j2.805 8.236 + j1.328
350 1.038 j2.185 8.153 + j1.406
375 1.071 j1.614 8.066 + j1.479
400 1.107 j1.080 7.975 + j1.547
425 1.147 j0.574 7.880 + j1.610
450 1.193 j0.092 7.782 + j1.667
475 1.243 + j0.373 7.682 + j1.720
500 1.300 + j0.826 7.579 + j1.767
525 1.364 + j1.270 7.474 + j1.809
550 1.436 + j1.708 7.367 + j1.846
575 1.517 + j2.144 7.258 + j1.877
600 1.609 + j2.581 7.149 + j1.903
625 1.714 + j3.022 7.038 + j1.925
650 1.834 + j3.469 6.927 + j1.941
675 1.971 + j3.925 6.815 + j1.952
700 2.129 + j4.394 6.703 + j1.958
725 2.313 + j4.879 6.591 + j1.960
750 2.528 + j5.382 6.480 + j1.956
775 2.781 + j5.907 6.368 + j1.949
800 3.081 + j6.458 6.258 + j1.937
825 3.441 + j7.038 6.148 + j1.921
850 3.875 + j7.648 6.040 + j1.901
875 4.404 + j8.291 5.932 + j1.877
900 5.057 + j8.964 5.825 + j1.849
925 5.870 + j9.659 5.720 + j1.818
950 6.892 + j10.358 5.616 + j1.783
975 8.186 + j11.019 5.514 + j1.745
1000 9.829 + j11.566 5.413 + j1.704
001aan207
gate 1
gate 2
drain 2
drain 1
ZiZL
BLF884P_BLF884PS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 16 December 2011 7 of 15
NXP Semiconductors BLF884P; BLF884PS
UHF power LDMOS transistor
8. Test information
[1] American technical ceramics type 800B or capacitor of same quality.
[2] American technical ceramics type 180R or capacitor of same quality.
[3] American technical ceramics type 100A or capacitor of same quality.
[4] Printed-Circuit Board (PCB): Taconic RF35; r = 3.5 F/m; height = 0.762 mm; Cu (top/bottom metallization);
thickness copper plating = 35 m.
Table 9. List of componen ts
For test circuit, see Figure 5 and Figure 6.
Component Description Value Remarks
B1, B2 semi rigid coax 25 ; 49.5 mm UT-090C-25 (EZ 90-25)
C1, C2 multilayer ceramic chip capacitor 5.1 pF [1]
C3 multilayer ceramic chip capacitor 6.8 pF [1]
C4 multilayer ceramic chip capacitor 8.2 pF [1]
C10, C13, C14 multilayer ceramic chip capacitor 100 pF [2]
C11, C12 multilayer ceramic chip capacitor 10 pF [1]
C15, C16 multilayer ceramic chip capacitor 4.7 F, 50 V Kemet C1210X475K5RAC-TU or
capacitor of same quality.
C17, C18, C23,
C24 multilayer ceramic chip capacitor 100 pF [1]
C19, C20 multilayer ceramic chip capacitor 10 F, 50 V TDK C570X7R1H106KT000N or
capacitor of same quality.
C21, C22 electrolytic capacitor 470 F; 63 V
C30 multilayer ceramic chip capacitor 13 pF [3]
C31 multilayer ceramic chip capacitor 2.2 pF [3]
C33, C34, C35 multilayer ceramic chip capacitor 100 pF [3]
C36, C37 multilayer ceramic chip capacitor 4.7 F, 50 V TDK C4532X7R1E475MT020U or
capacitor of same quality.
L1 microstrip - [4] (W L) 15 mm 13 mm
L2 microstrip - [4] (W L) 5 mm 26 mm
L3, L32 microstrip - [4] (W L) 2 mm 49.5 mm
L4 microstrip - [4] (W L) 1.7 mm 3.5 mm
L5 microstrip - [4] (W L) 2 mm 9.5 mm
L30 microstrip - [4] (W L) 5 mm 13 mm
L31 microstrip - [4] (W L) 2 mm 11 mm
L33 microstrip - [4] (W L) 2 mm 3mm
R1, R2 wire resistor 10
R3, R4 SMD resistor 5.6 0805
R5, R6 wire resistor 100
R7, R8 potentiometer 10 k
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BLF884P_BLF884PS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 16 December 2011 8 of 15
NXP Semiconductors BLF884P; BLF884PS
UHF power LDMO S tr ans is to r
See Table 9 for a list of components.
Fig 5. Class-AB common source broadband amplifier
BLF884P_BLF884PS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 16 December 2011 9 of 15
NXP Semiconductors BLF884P; BLF884PS
UHF power LDMOS transistor
See Table 9 for a list of components.
Fig 6. Component layout for class-AB common source amplifier
-
+
-
+
6.3 mm
4 mm
+VG2 +VD2
+VD1
+VG1
aaa-001709
R8
R7
R6
C37
C35
C34
C31 C30
C36
C17
C19
C20
C11
C12
C4
C24
C23
C1
C2 C3
C21
C21
C22
C18
R2
C15
C13
C14
C16
R1
C33
50 Ω
C10
50 Ω
R4
R3
R5
48 mm
30.5 mm
26 mm
45.7 mm
BLF884P_BLF884PS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 16 December 2011 10 of 15
NXP Semiconductors BLF884P; BLF884PS
UHF power LDMOS transistor
9. Package outline
Fig 7. Package outline SOT1121A
References
Outline
version European
projection Issue date
IEC JEDEC JEITA
SOT1121A 09-10-12
10-02-02
Flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT1121A
E1
Q
E
c
D
A
F
D1
A
B
C
q
e
H1
U1
U2
H
Cw2
b
Aw1B
p
2
1
4
5
3
sot1121a_po
Unit(1)
mm max
nom
min
4.75
3.45
3.94
3.68
0.18
0.10
20.02
19.61
19.96
19.66
9.53
9.27
1.14
0.89
19.94
18.92
3.38
3.12
9.91
9.65 0.25
A
Dimensions
bcDD
1EE
1
9.53
9.27
FHH
1
12.83
12.57
pQ
(2)
1.70
1.45
q
27.94
U1
34.16
33.91
U2w1
0.51
inches max
nom
min
0.187
0.136
0.155
0.145
0.007
0.004
8.89
e
0.35
0.788
0.772
0.786
0.774
0.375
0.365
0.045
0.035
0.785
0.745
0.133
0.123
0.39
0.38 0.01
0.375
0.365
0.505
0.495
0.067
0.057 1.1 1.345
1.335 0.02
w2
0 5 10 mm
scale
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
BLF884P_BLF884PS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 16 December 2011 11 of 15
NXP Semiconductors BLF884P; BLF884PS
UHF power LDMOS transistor
Fig 8. Package outline SOT1121B
References
Outline
version European
projection Issue date
IEC JEDEC JEITA
SOT1121B
sot1121b_po
09-10-12
09-12-14
Unit(1)
mm max
nom
min
4.75
3.45
3.94
3.68
0.18
0.08
20.02
19.61
19.96
19.66
9.53
9.27
1.14
0.89
19.94
18.92
9.91
9.65
A
Dimensions
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
Earless flanged LDMOST ceramic package; 4 leads SOT1121B
bcDD
1EE
1
9.53
9.27
FHH
1
12.83
12.57
Q
1.70
1.45
U1
20.70
20.45
U2
inches max
nom
min
0.187
0.136
0.155
0.145
0.007
0.003
8.89
e
0.35
0.788
0.772
0.786
0.774
0.375
0.365
0.045
0.035
0.785
0.745
0.39
0.38
0.375
0.365
0.505
0.495
0.067
0.057
0.815
0.805
0.25
0.01
0.51
0.02
w2w3
0 5 10 mm
scale
D
H1
U1
A
F
D1D
E1
U2
H
w3
Dw2
Q
E
c
5
2
1
4
3
e
b
BLF884P_BLF884PS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 16 December 2011 12 of 15
NXP Semiconductors BLF884P; BLF884PS
UHF power LDMOS transistor
10. Handling information
11. Abbreviations
12. Revision history
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Table 10. Abbreviations
Acronym Description
CCDF Complementary Cumulative Distribution Function
DVB Digital Video Broadcast
DVB-T Digital Video Broadcast - Terrestrial
LDMOS Laterally Diffused Metal-Oxide Semiconductor
LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor
OFDM Orthogonal Frequency Division Multiplexing
PAR Peak-to-Average power Ratio
RF Radio Frequency
SMD Surface Mounted Device
UHF Ultra High Frequency
VSWR Voltage Standing-Wave Ratio
Table 11. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLF884P_BLF884PS v.2 20111216 Product data sheet - BLF884P_BLF884PS v.1
Modifications: •Table Table 1. on page 1: Has been updated
•Table Table 7. on page 3: Has been updated
• Removed section “Reliability”
BLF884P_BLF884PS v.1 20111013 Objective data sheet - -
BLF884P_BLF884PS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 16 December 2011 13 of 15
NXP Semiconductors BLF884P; BLF884PS
UHF power LDMOS transistor
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short dat a sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the shor t data sheet, the
full data sheet shall pre vail.
Product specificat ion — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyond those described in the
Product data sheet.
13.3 Disclaimers
Limited warr a nty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
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Notwithstanding any damages that customer might incur for any reason
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customer for the products described herein shall be limited in accordance
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Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
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Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suit able for use in life support, life-critical or
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malfunction of an NXP Semiconductors product can reasonably be expected
to result in perso nal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for il lustrative purposes only. NXP Semiconductors makes no
representation or warranty tha t such application s will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
and products using NXP Semiconductors product s, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suit able and fit for the custome r’s applications and
products planned, as well as fo r the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by custo m er’s
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Semiconductors products in order to avoid a default of the applications and
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customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanent ly and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
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applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
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Export control — This document as well as the item(s) described herein
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Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] dat a sheet Production This document contains the product specification.
BLF884P_BLF884PS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 16 December 2011 14 of 15
NXP Semiconductors BLF884P; BLF884PS
UHF power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automo tive use. It is neither qua lif ied nor test ed
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automot ive specifications and standard s, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applicat ions, use and specifications, and (b)
whenever cust omer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive appl ications beyond NXP Semiconductors’
standard warrant y and NXP Semiconductors’ product specifications.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics se ctions of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Licenses
13.5 Trademarks
Notice: All refe renced brands, produc t names, service names and trademarks
are the property of their respect i ve ow ners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
ICs with DVB-T or DVB-T2 functionality
Use of this product in any manner that complies with the DVB-T or the
DVB-T2 standard may require licenses under applicable patents of the
DVB-T respectively the DVB-T2 p atent portfolio, which license is available
from Sisvel S.p.A., Via Sestriere 100, 10060 None (TO), Italy, and under
applicable pate nts of other parties.
NXP Semiconductors BLF884P; BLF884PS
UHF power LDMOS transistor
© NXP B.V. 2011. All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 16 December 2011
Document identifier: BLF884P_BLF884PS
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6.1 Ruggedness in class-AB operation . . . . . . . . . 4
7 Application information. . . . . . . . . . . . . . . . . . . 5
7.1 Broadband RF figures . . . . . . . . . . . . . . . . . . . 5
7.1.1 DVB-T. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
7.2 Impedance information. . . . . . . . . . . . . . . . . . . 6
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
10 Handling information. . . . . . . . . . . . . . . . . . . . 12
11 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 12
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
13.4 Licenses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
13.5 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
14 Contact information. . . . . . . . . . . . . . . . . . . . . 14
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15