SEMICONDUCTOR
HARRIS POWER PRODUCT LINE
RF1S Series Power MOSFET TO-263AB Product Matrix TO-263AB (D2-PAK)
BVDSS rDS(ON) 0A TO 10A 11A TO 20A 21A TO 30A 31A TO 40A 41A TO 50A 51A TO 60A 61A TO 70A
30V 0.010ΩRF1S70N03SM
30V, 70A, 0.010Ω
0.022ΩRF1S45N03LSM
30V, 45A, 0.022Ω
0.027ΩRF1S60P03SM (Note)
30V, 60A, 0.027Ω
50V 0.065ΩRF1S30P05SM (Note)
50V, 30A, 0.065Ω
60V 0.014ΩRF1S70N06SM
60V, 70A, 0.014Ω
0.022ΩRF1S50N06SM
60V, 50A, 0.022Ω
RF1S50N06LESM
60V, 50A, 0.022Ω
0.028ΩRF1S45N06SM
60V, 45A, 0.028Ω
RF1S45N06LESM
60V, 45A, 0.028Ω
0.047ΩRF1S25N06SM
60V, 25A, 0.047Ω
RF1S30N06LESM
60V, 30A, 0.047Ω
0.065ΩRF1S23N06LESM
60V, 23A, 0.065Ω
RF1S30P06SM
60V, 30A, 0.065Ω
0.100Ω
RF1S17N06LSM
60V, 17A, 0.100Ω
0.140Ω
RF1S15N06SM
60V, 15A, 0.140Ω
100V 0.040ΩRF1S40N10SM
100V, 40A, 0.040Ω
RF1S40N10LESM
100V, 40A, 0.040Ω
0.077ΩRF1S540SM
100V, 28A, 0.077Ω
0.080Ω
RF1S22N10SM
100V, 22A, 0.080Ω
0.160ΩRF1S530SM
100V, 14A, 0.160Ω
0.200ΩRF1S9540SM (Note)
100V, 19A, 0.200Ω
0.300ΩRF1S9530SM (Note)
100V, 12A, 0.300Ω
200V 0.18ΩRF1S640SM
200V, 18A, 0.180Ω
0.400ΩRF1S630SM
200V, 9A, 0.400Ω
0.500ΩRF1S9640SM (Note)
200V, 11A, 0.500Ω
0.800ΩRF1S9630SM (Note)
200V, 6.5A, 0.800Ω
1000V 3.500Ω
RF1S4N100SM
1000V, 4.3A, 3.500Ω
A
A
M
PACKAGE DESIGNATION
1S: TO-262, TO-263
R X XX XX X XX XXX
VOLTAGE RATING
05 = 50V, 10 = 100V,
20 = 200V, etc.
POLARITY
N: N-Channel
P: P-Channel
CURRENT RATING
1 = 1A, 10 = 10A, 25 = 25A, etc.
FEATURE SUFFIX
L: Logic Level 5V Gate
SM: Surface Mount Leadform
(TO-263AB)
E: ESD Protected Device
9A: Tape and Reel
DEVICE TYPE
F: Standard MOSFET
L: Current Limited MOSFET
EXAMPLE: RF1S60P03SM
Standard 60A, P-Channel, 30V, Surface Mount MOSFET
PART NOMENCLATURE
LC96586_1.1
NOTE: P-Channel Device BOLD = Logic Level Devices ITALICS = Future Offerings (2nd Quarter FY ’97)
LC96586
SEMICONDUCTOR
TO-263AB SURFACE MOUNT JEDEC TO-263AB PLASTIC PACKAGE
MINIMUM PAD SIZE RECOMMENDED FOR
SURFACE-MOUNTED APPLICATIONS
EA1
A
H1
D
L
be
e1
L2
b1
L1
c
J
TERM. 4
13
1
13
L
3
b
2
TERM. 4 .450
.350
.150
(3.81)
.080(2.03).080(2.03)
.700
(11.43)
(8.89)
(17.78)
.062(1.58) .062(1.58)
SYMBOL
INCHES MILLIMETERS
NOTESMIN MAX MIN MAX
A 0.170 0.180 4.32 4.57 -
A10.048 0.052 1.22 1.32 4, 5
b 0.030 0.034 0.77 0.86 4, 5
b10.045 0.055 1.15 1.39 4, 5
b20.310 - 7.88 - 2
c 0.018 0.022 0.46 0.55 4, 5
D 0.405 0.425 10.29 10.79 -
E 0.395 0.405 10.04 10.28 -
e 0.100 TYP 2.54 TYP 7
e10.200 BSC 5.08 BSC 7
H10.045 0.055 1.15 1.39 -
J10.095 0.105 2.42 2.66 -
L 0.175 0.195 4.45 4.95 -
L10.090 0.110 2.29 2.79 4, 6
L20.050 0.070 1.27 1.77 3
L30.315 - 8.01 - 2
NOTES:
1. These dimensions are within allowable dimensions of Rev. C of
JEDEC TO-263AB outline dated 2-92.
2. L3 and b2 dimensions established a minimum mounting surface
for terminal 4.
3. Solder finish uncontrolled in this area.
4. Dimension (without solder).
5. Add typically 0.002 inches (0.05mm) for
solder plating.
6. L1 is the terminal length for soldering.
7. Position of lead to be measured 0.120 inches
(3.05mm) from bottom of dimension D.
8. Controlling dimension: Inch.
9. Revision 7 dated 10-95.
24mm TAPE AND REEL
330mm 100mm
13mm
30.4mm
24.4mm
2.0mm
4.0mm 1.75mm
1.5mm
DIA. HOLE C
L
COVER TAPE
USER DIRECTION OF FEED
GENERAL INFORMATION
1. USE "9A" SUFFIX ON PART NUMBER.
2. 800 PIECES PER REEL.
3. ORDER IN MULTIPLES OF FULL REELS ONLY.
4. MEETS EIA-481 REVISION "A" SPECIFICATIONS.
16mm
24mm
ACCESS HOLE
40mm MIN.
Revision 7 dated 10-95
LC96586_1.1
SEMICONDUCTOR
HARRIS POWER PRODUCT LINE
R and IRF Series Power MOSFET TO-252AA Product Matrix TO-252AA (D-PAK)
BVDSS rDS(ON) 0A TO 3.5A 3.6A TO 7.9A 8A TO 9.9A 10A 12A 14A 15A 16A
30V 0.200ΩRFD10P03LSM (Note)
30V, 10A, 0.200Ω
50V 0.047ΩRFD16N05LSM
50V, 16A, 0.047Ω
RFD16N05SM
50V, 16A, 0.047Ω
0.100ΩRFD14N05LSM
50V, 14A, 0.100Ω
RFD14N05SM
50V, 14A, 0.100Ω
0.150ΩRFD15P05SM (Note)
50V, 15A, 0.150Ω
0.300ΩRFD8P05SM (Note)
50V, 8A, 0.300Ω
60V 0.047ΩRFD16N06LESM
60V, 16A, 0.047Ω
RFD16N06SM
60V, 16A, 0.047Ω
0.065Ω
RFD15N06LESM
60V, 15A, 0.065Ω
0.100ΩRFD14N06LSM
60V, 14A, 0.100Ω
RFD14N06SM
60V, 14A, 0.100Ω
0.135ΩRFD12N06RLESM
60V, 12A, 0 .135Ω
0.150ΩRFD3055SM
60V, 12A, 0.150ΩRFD15P06SM (Note)
60V, 15A, 0.150Ω
0.300ΩRFD8P06ESM (Note)
60V, 8A, 0.300Ω
0.600ΩRFD4N06LSM
60V, 4A, 0.600Ω
80V 0.800ΩRFD3N08LSM
80V, 3A, 0.800Ω
0.270ΩIRFR121
80V, 8.4A, 0.270Ω
100V 0.270ΩIRFR120
100V, 8.4A, 0.270Ω
0.540ΩIRFR110
100V, 4.7A, 0. 540Ω
0.600ΩIRFR9120 (Note)
100V, 5.6A, 0.600Ω
1.200ΩIRFR9110 (Note)
100V, 3.1A, 1.200Ω
BVDSS rDS(ON) 0A TO 3.5A 3.6A TO 7.9A
150V 0.800ΩIRFR221
150V, 4.6A, 0. 800Ω
200V 0.300ΩRFD7N10LESM
100V, 7A, 0.300Ω
0.800ΩIRFR220
200V, 4.6A, 0. 800Ω
1.200ΩIRFR222
200V, 3.8A 1.200Ω
1.500ΩIRFR9220 (Note)
200V, 0.6A, 1.500Ω
250V 2.000ΩIRFR214
250V, 2.2A 2.000Ω
350V 1.800ΩIRFR321
350V, 3.1A 1.800Ω
BVDSS rDS(ON) 0A TO 3.5A
400V 1.800ΩIRFR320
400V, 3.1A 1.800Ω
2.500ΩIRFR322
400V, 2.6A 2.500Ω
450V 3.000ΩIRFR421
450V, 2.5A 3.000Ω
500V 3.000ΩIRFR420
500V, 2.5A 3.000Ω
4.000ΩIRFR422
500V, 2.2A 4.000Ω
7.000ΩIRFR410
500V, 1.5A 7.000Ω
PACKAGE DESIGNATION
D: TO-251, TO-252 (D-PAK)
PACKAGE DESIGNATION:
R: TO-252
RX XXXX
I
R: Ruggedized (Early Indicator for
Avalanche Capability. All
Devices now have EAS Ratings)
DIE SIZE
Voltage Polarity and Electrical
Specifications
DEVICE TYPE
F: Standard MOSFET
L: Current Limited MOSFET
RXXXXXXX XXX
FEATURE SUFFIX
L: Logic Level 5V Gate
SM: Surface Mount Leadform
(TO-252)
E: ESD Protected Device
9A: Tape and Reel
VOLTAGE RATING
05 = 50V, 10 = 100V,
20 = 200V, etc.
POLARITY
N: N-Channel
P: P-Channel
CURRENT RATING
1 = 1A, 10 = 10A, 25 = 25A, etc.
PART NOMENCLATURE
EXAMPLE:
IRFR214 - D-PAK, N Channel, 250V, 2.2A, 2.000Ω rDS(ON)
Ruggedized MOSFET
EXAMPLE:
RFD15N05SM - D-PAK, 15A, N-Channel, 50V,
Surface Mount Leadform
F
LC96586_2.1
SEMICONDUCTOR
NOTE: P-Channel Device
BOLD = Logic Level Devices
ITALICS = Future Offerings (2nd Quarter FY ’97)
SEMICONDUCTOR
16mm TAPE AND REEL
330mm 50mm
13mm
22.4mm
16.4mm
2.0mm
4.0mm 1.75mm
1.5mm
DIA. HOLE
C
L
COVER TAPE
USER DIRECTION OF FEED
8.0mm
16mm
GENERAL INFORMATION
1. USE "9A" SUFFIX ON PART NUMBER.
2. 2500 PIECES PER REEL.
3. ORDER IN MULTIPLES OF FULL REELS ONLY.
4. MEETS EIA-481 REVISION "A" SPECIFICATIONS.
Revision 5 dated 10-95
TO-252AA SURFACE MOUNT JEDEC TO-252AA PLASTIC PACKAGE
b2
E
D
L3
L
e
b1
b
13
A
L
c
SEATING
BACK VIEW
2
H1A1
b3
e1J1
L1
TERM. 4 0.265
MINIMUM PAD SIZE RECOMMENDED FOR
SURFACE-MOUNTED APPLICATIONS
(6.7)
0.265 (6.7)
0.070 (1.8)
0.118 (3.0)
0.063 (1.6)
0.090 (2.3)
0.063 (1.6)
0.090 (2.3)
PLANE
SYMBOL
INCHES MILLIMETERS
NOTESMIN MAX MIN MAX
A 0.086 0.094 2.19 2.38 -
A10.018 0.022 0.46 0.55 4, 5
b 0.028 0.032 0.72 0.81 4, 5
b10.033 0.040 0.84 1.01 4
b20.205 0.215 5.21 5.46 4, 5
b30.190 - 4.83 - 2
c 0.018 0.022 0.46 0.55 4, 5
D 0.270 0.290 6.86 7.36 -
E 0.250 0.265 6.35 6.73 -
e 0.090 TYP 2.28 TYP 7
e10.180 BSC 4.57 BSC 7
H10.035 0.045 0.89 1.14 -
J10.040 0.045 1.02 1.14 -
L 0.100 0.115 2.54 2.92 -
L10.020 - 0.51 - 4 , 6
L20.025 0.040 0.64 1.01 3
L30.170 - 4.32 - 2
NOTES:
1. These dimensions are within allowab le dimensions of Re v.
B of JEDEC TO-252AA outline dated 9-88.
2. L3 and b3 dimensions establish a minimum mounting sur-
face for terminal 4.
3. Solder finish uncontrolled in this area.
4. Dimension (without solder).
5. Add typically 0.002 inches (0.05mm) for solder plating.
6. L1 is the terminal length for soldering.
7. Position of lead to be measured 0.090 inches (2.28mm)
from bottom of dimension D.
8. Controlling dimension: Inch.
9. Revision 5 dated 10-95.
LC96586_2.1
SEMICONDUCTOR
SEMICONDUCTOR
HARRIS POWER PRODUCT LINE
RF1K Series Power MOSFET SO-8 Product Matrix SO-8
BVDSS rDS(ON) 2A 2.5A 3.5A 6.3A 7A
12V 0.050 RF1K49090 (Note 1)
12V, 3.5A, 0.050Ω
0.020
RF1K49211
(Note 2)
12V, 7A, 0.020Ω
0.130 RF1K49092 (Note 1)
12V, 2.5A, 0.130Ω(P)
12V, 3.5A, 0.050Ω (N)
RF1K49093 (Note 1)
12V, 3.5A, 0.130Ω
30V 0.030 RF1K49156 (Note 2)
30V, 6.3A, 0.030Ω
RF1K49157 (Note 2)
30V, 6.3A, 0.030Ω
0.060 RF1K49086 (Note 1)
30V, 3.5A, 0.060Ω
RF1K49088 (Note 1)
30V, 3.5A, 0.060Ω
60V 0.150 RF1K49154 (Note 1)
60V, 2A, 0.150Ω
NOTES:
1. Dual Function MOSFET,
2. Single Function MOSFET
PACKAGE TYPE
SO-8 (JEDEC MS-012AA)
RF 1K XXXXX YY
5 DIGIT PART NUMBER
FEATURE SUFFIX
96: Tape and Reel
HARRIS RUGGED MOSFET
EXAMPLE: RF1K49092
Avalanche Rated, N-Channel, Logic Level,
Complementary Enhancement Mode MOSFET
12V, 3.5A, 0.050Ω rDS(ON)
PART NOMENCLATURE
Features
• Low voltage inputs eliminate the need for charge pumps in high
side load switching applications
•Low r
DS(ON) reduces pow er consumption and increases efficiency
• Low profile package, excellent for height restricted applications
• Dual functions per package increase board packing density and
reduces part count
• Surface mount, small footprint, aids high volume assembly
• Designed, tested, and rated for ruggedness
• Low voltage logic level input characteristics
• The most comprehensive data sheet char acterization of any supplier
- Temperature compensated SPICE models
- Single pulse UIS curves
- Switching vs gate resistance
-r
DS(ON) vs VGS curves
Applications
Telecom/Communications
• DC/DC converters
- Synchronous buck regulator circuits
- Ultra efficient synchronous boost regulators for 5V-20V sys-
tems
• Cellular telephones/Wireless products
- Battery charging circuits
- Power management circuits
Computer/EDP
• Load management and power control
- Laptop computer PCMCIA cards, Fax/Modems and display
back lighting
- 5V and 3.3V low power applications
• Low voltage DC/DC converters
• Motor Control
- Tape drives, disk drives, and low voltage motors
LC96586_3.1
BOLD = Logic Level Devices
ITALICS = Future Offerings (2nd Quarter FY ’97)
SEMICONDUCTOR
12mm TAPE AND REEL
330mm 50mm
13mm
18.4mm
12.4mm
2.0mm
4.0mm 1.75mm
1.5mm
DIA. HOLE
C
L
USER DIRECTION OF FEED
GENERAL INFORMATION
1. USE "96" SUFFIX ON PART NUMBER.
2. 2500 PIECES PER REEL.
3. ORDER IN MULTIPLES OF FULL REELS ONLY.
4. MEETS EIA-481 REVISION "A" SPECIFICATIONS.
8.0mm
12mm
ACCESS HOLE
40mm MIN.
COVER TAPE
Revision 5 dated 2-96
MS-012AA 8 LEAD JEDEC MS-012AA SMALL OUTLINE PLASTIC PACKAGE
A
E
E1
e
b
D
L
h x 45o
2
0o-8o
c
0.004 IN
0.10 mm
56
0.155
4.0
0.275
7.0
0.050
1.27
0.024
0.6
0.060
1.52
MINIMUM RECOMMENDED FOOTPRINT FOR
SURFACE-MOUNTED APPLICATIONS
1
SYMBOL
INCHES MILLIMETERS
NOTESMIN MAX MIN MAX
A 0.0532 0.0688 1.35 1.75 -
A10.004 0.0098 0.10 0.25 -
b 0.013 0.020 0.33 0.51 -
c 0.0075 0.0098 0.19 0.25 -
D 0.189 0.1968 4.80 5.00 2
E 0.2284 0.244 5.80 6.20 -
E10.1497 0.1574 3.80 4.00 3
e 0.050 BSC 1.27 BSC -
H 0.0099 0.0196 0.25 0.50 -
L 0.016 0.050 0.40 1.27 4
NOTES:
1. All dimensions are within allowab le dimensions of Re v. C of
JEDEC MS-012AA outline dated 5-90.
2. Dimension “D” does not include mold flash, protrusions or gate
burrs. Mold flash, protrusions or gate burrs shall not exceed
0.006 inches (0.15mm) per side.
3. Dimension “E1” does not include inter-lead flash or protrusions.
Inter-lead flash and protrusions shall not exceed 0.010 inches
(0.25mm) per side.
4. “L” is the length of terminal f or soldering.
5. The chamfer on the body is optional. If it is not present,
a visual index feature must be located within the
crosshatched area.
6. Controlling dimension: Millimeter.
7. Revision 5 dated 2-23-96.
LC96586_3.1
SEMICONDUCTOR
HARRIS DISCRETE POWER PRODUCT LINE
TO-251/252 10V GATES STANDARD DEVICE
VDSS (V) r(DSON) I (A) TO-251AA TO-252AA CHANNEL
50V 0.047Ω16A RFD16N05 RFD16N05SM N
0.100Ω14A RFD14N05 RFD14N05SM N
0.150Ω15A RFD15P05 RFD15P05SM P
50V 0.300Ω8A RFD8P05 RFD8P05SM P
60V 0.047Ω16A RFD16N06 RFD16N06SM N
0.100Ω14A RFD14N06 RFD14N06SM N
0.150Ω15A RFD15P06 RFD15P06SM P
0.300Ω8A RFD8P06E RFD8P06ESM P
0.150Ω12A RFD3055 RFD3055SM N
80V 0.270Ω8.4A IRFU121 IRFR121 N
100V 0.270Ω8.4A IRFU120 IRFR120 N
0.540Ω4.7A IRFU110 IRFR110 N
0.600Ω5.6A IRFU9120 IRFR9120 P
1.200Ω3.1A IRFU9110 IRFR9110 P
150V 0.800Ω4.6A IRFU221 IRFR221 N
200V 0.800Ω4.6A IRFU220 IRFR220 N
1.200Ω3.8A IRFU222 IRFR222 N
1.500Ω0.6A IRFU9220 IRFR9220 P
250V 2.000Ω2.2A IRFU214 IRFR214 N
350V 1.800Ω3.1A IRFU321 IRFR321 N
400V 1.800Ω3.1A IRFU320 IRFR320 N
2.500Ω2.6A IRFU322 IRFR322 N
450V 3.000Ω2.5A IRFU421 IRFR421 N
500V 3.000Ω2.5A IRFU420 IRFR420 N
4.000Ω2.2A IRFR422 IRFR422 N
7.000Ω1.5A IRFU410 IRFR410 N
TO-251/252 LOGIC LEVEL DEVICES
VDSS (V) r(DSON) I (A) TO-251AA TO-252AA CHANNEL
30V 0.022Ω16A RFD16N03L RFD16N03LSM N
0.200Ω10A RFD10P03L RFD10P03LSM P
50V 0.047Ω16A RFD16N05L RFD16N05LSM N
0.100Ω14A RFD14N05L RFD14N05LSM N
60V 0.047Ω16A RFD16N06LE RFD16N06LESM N
0.065Ω15A
RFD15N06LE RFD15N06LESM
N
0.100Ω14A RFD14N06L RFD14N06LSM N
0.135Ω12A RFD12N06RLE RFD12N06RLESM N
0.150Ω12A RFD3055LE RFD3055LESM N
0.600Ω4A RFD4N06L RFD4N06LSM N
80V 0.800Ω3A RFD3N08L RFD3N08LSM N
100V 0.300Ω7A RFD7N10LE RFD7N10LESM N
TO-262/263 10V GATES STANDARD DEVICE
VDSS (V) r(DSON) I (A) TO-262AA TO-263AB CHANNEL
30V 0.010Ω70A RF1S70N03 RF1S70N03SM N
0.027Ω60A RF1S60P03 RF1S60P03SM P
50V 0.065Ω30A RF1S30P05 RF1S30P05SM P
60V 0.014Ω70A RF1S70N06 RF1S70N06SM N
0.022Ω50A RF1S50N06 RF1S50N06SM N
0.028Ω45A RF1S45N06 RF1S45N06SM N
0.047Ω25A RF1S25N06 RF1S25N06SM N
0.075Ω30A RF1S30P06 RF1S30P06SM P
0.140Ω15A
RF1S15N06 RF1S15N06SM
N
100V 0.080Ω22A
RF1S22N10 RF1S22N10SM
N
0.160Ω14A RF1S530 RF1S530SM N
0.200Ω19A RF1S9540 RF1S9540SM P
0.300Ω12A RF1S9530 RF1S9530SM P
0.040Ω40A RF1S40N10 RF1S40N10SM N
0.077Ω28A RF1S540 RF1S540SM N
200V 0.180Ω18A RF1S640 RF1S640SM N
0.400Ω9A RF1S630 RF1S630SM N
0.500Ω11A RF1S9640 RF1S9640SM P
0.800Ω6.5A RF1S9630 RF1S9630SM P
1000V 3.500Ω4.3A
RF1S4N100 RF1S4N100SM
N
TO-262/263 LOGIC LEVEL DEVICES
VDSS (V) r(DSON) I (A) TO-262AA TO-263AB CHANNEL
30V 0.022Ω45A RF1S45N03L RF1S45N03LSM N
60V 0.022Ω50A
RF1S50N06LE RF1S50N06LESM
N
0.028Ω45A
RF1S45N06LE RF1S45N06LESM
N
0.047Ω30A RF1S30N06LE RF1S30N06LESM N
0.065Ω23A RF1S23N06LE RF1S23N06LESM N
0.100Ω17A
RF1S17N06L RF1S17N06LSM
N
SO-8 10V GATES STANDARD DEVICE LITTLE FET DEVICES
VDSS (V) r(DSON) I (A) DEVICE PACKAGE CHANNEL
30V 0.030Ω6.3A RF1K49157 SO-8 N
0.060Ω3.5A RF1K49086 SO-8 N
SO-8 LOGIC LEVEL DEVICES LITTLE FET DEVICES
VDSS (V) r(DSON) I (A) DEVICE PACKAGE CHANNEL
12V 0.020Ω7A
RF1K49211
SO-8 N
0.050Ω3.5A RF1K49092 SO-8 N
RF1K49090 SO-8 N
0.130Ω2.5A RF1K49092 SO-8 P
3.5A RF1K49093 SO-8 P
30V 0.030Ω6.3A RF1K49156 SO-8 N
0.060Ω3.5A RF1K49088 SO-8 N
60V 0.150Ω2.0A RF1K49154 SO-8 N
LC96586_4.1
Parts can be shipped in tape and reel form by placing 9A at the end of the part number.
EXAMPLE: RFD16N03LSM9A - Same as RDF16N05LSM but Tape & Reeled.
ITALICS = Future Offerings (2nd Quarter FY ’97)
SEMICONDUCTOR
P-CHANNEL DEVICES
VDSS (V) r(DSON) I (A) DEVICE PACKAGE CHANNEL
12V 0.050Ω2.5A RF1K49092 SO-8 P
0.130Ω3.5A RF1K49093 SO-8 P
30V 0.027Ω60A RF1S60P03/SM TO-262AA/263AB P
0.065Ω30A RF1S30P05SM TO-262AA/263AB P
0.200Ω10A RFD10P03L/SM TO-251AA/252AA P
0.300Ω8A RFD8P05/SM TO-251AA/252AA P
50V 0.150Ω15A RFD15P05/SM TO-251AA/252AA P
60V 0.075Ω30A RF1S30P06/SM TO-262AA/263AB P
0.150Ω15A RFD15P06/SM TO-251AA/252AA P
0.300Ω8A RFD8P06E/SM TO-251AA/252AA P
100V 0.200Ω19A RF1S9540/SM TO-262AA/263AB P
0.300Ω12A RF1S9530/SM TO-262AA/263AB P
0.600Ω5.6A IRFR9120 TO-252AA P
IRFU9120 TO-251AA P
1.200Ω3.1A IRFR9110 TO-252AA P
IRFU9110 TO-251AA P
200V 0.500Ω11A RF1S9640/SM TO-262AA/263AB P
0.800Ω6.5A RF1S9630/SM TO-262AA/263AB P
1.500Ω0.6A IRFR9220 TO-252AA P
IRFU9220 TO-251AA P
A
A
M
TO-263AB (D2-PAK)
TO-252AA (D-PAK)
TO-262AA (D2-PAK)
SO-8
TO-251AA (D-PAK)
A
PLASTIC PACKAGES
Advanced Power MOS
Features
• Current limiting, voltage clamping
• Over voltage gate protection
• Thermal protection
• Logic level
Applications
• Fault tolerant motor drives
• Stall protection
• Current inrush limiting
• Automotive headlamp drivers
• Diagnostic motor controls
Logic Level MOSFETs
Features
• Full drain current rating with 5V gate drive
• Microprocessor and logic compatible
• Electrostatic discharge protected gates available
• Avalanche energy capability available
• Both N and P channel devices
•BV
DSS rating of 50V to 200V
• Surface mount TO-251/2 (D-PAK), MS-012 (SO-8),
TO-262/3 (D2-PAK)
Applications
• Solid state DC relays
• Lamp drivers
• Stepper motor drives
• Small motor controls
• High side drivers
• SMPS MOSFET predrivers
JEDEC MOSFETs
Features
• JEDEC Registered MOSFETs for Military and High Rel
Applications
•BV
DSS 60V to 500V
• N and P channel devices
• Hermetic packages
Applications
• Military
• High Reliability
• Space
Standard RFx and IRFx MOSFETs
N and P Channel
Features
• Size 1 through 5 die
• All IRF types are avalanche capable
•BV
DSS up to 1000V
Applications
• Offline and DC/DC converters
• Power supplies
• Pulse generators
• Super efficient DC/DC converters
• Solid state DC relays
• Low loss DC switches
• Lamp drivers
• Operational amplifier buffer stage
• Stepper motor drives
• Small motor controls
• Laser diode pulse generators
• SMPS drivers
HARRIS DISCRETE POWER PRODUCT LINE - Plastic Packages
LC96586_4.1
ITALICS = Future Offerings (2nd Quarter FY ’97)
