BUZ60B Semiconductor Data Sheet 4.5A, 400V, 1.500 Ohm, N-Channel Power MOSFET October 1998 File Number 2261.1 Features * 4.5A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power * rDS(ON) = 1.500 (BUZ60 field effect transistor designed for applications such as * SOA is Power Dissipation Limited B) switching regulators, switching converters, motor drivers, /Sub* Nanosecond Switching Speeds relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. ject * Linear Transfer Characteristics (4.5A, This type can be operated directly from integrated circuits. * High Input Impedance 400V, Formerly developmental type TA17414. * Majority Carrier Device 1.500 Ordering Information * Related Literature Ohm, - TB334 "Guidelines for Soldering Surface Mount PACKAGE BRAND N-Chan- PART NUMBER Components to PC Boards" BUZ60B TO-220AB BUZ60B nel Power NOTE: When ordering, use the entire part number. Symbol MOSD FET) /Author () G /KeyS words (Harris Semiconductor, NPackaging ChanJEDEC TO-220AB nel Power SOURCE DRAIN MOSGATE DRAIN (FLANGE) FET, TO220AB) /Creator () /DOCIN FO pdfmark [ /PageMode /Use- 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright (c) Harris Corporation 1998 BUZ60B TC = 25oC, Unless Otherwise Specified Absolute Maximum Ratings Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current (TC = 35oC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg BUZ60B 400 400 4.5 18 20 75 0.6 -55 to 150 E 55/150/56 UNITS V V A A V W W/oC oC 300 260 oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. TC = 25oC, Unless Otherwise Specified Electrical Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 400 - - V Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 1mA (Figure 9) 2.1 3 4 V Zero Gate Voltage Drain Current TJ = 25oC, VDS = 400V, VGS = 0V TJ = 125oC, VDS = 400V, VGS = 0V - 20 250 A - 100 1000 A VGS = 20V, VDS = 0V - 10 100 nA rDS(ON) ID = 2.5A, VGS = 10V (Figure 8) - 1.2 1.500 gfs VDS = 25V, ID = 2.5A (Figure 11) 1.7 2.5 - S - 30 45 ns - 40 60 ns - 110 140 ns - 50 65 ns - 1.5 2 pF - 120 180 pF - 35 60 IDSS Gate to Source Leakage Current IGSS Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time td(ON) Rise Time tr Turn-Off Delay Time VCC = 30V, ID 2.6A, VGS = 10V, RGS = 50, RL = 10. (Figures 14, 15) td(OFF) Fall Time tf Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VDS = 25V, VGS = 0V, f = 1MHz (Figure 10) pF Thermal Resistance Junction to Case RJC 1.67 oC/W Thermal Resistance Junction to Ambient RJA 75 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL Continuous Source to Drain Current ISD Pulsed Source to Drain Current ISDM Source to Drain Diode Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge QRR TEST CONDITIONS MIN TYP MAX - 1.7 4.5 A - - 18 A TJ = 25oC, ISD = 9A, VGS = 0V - 1.15 1.50 V TJ = 25oC, ISD = 4.5A, dISD/dt = 100A/s, VR = 100V - 1000 - ns - 5 - C TC = 25oC NOTES: 2. Pulse Test: Pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 2 UNITS BUZ60B Unless Otherwise Specified 1.2 6 1.0 5 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER Typical Performance Curves 0.8 0.6 0.4 0.2 VGS 10V 4 3 2 1 0 0 25 125 50 75 100 TC , CASE TEMPERATURE (oC) 0 150 ZJC, TRANSIENT THERMAL IMPEDANCE FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 1 0 50 100 TC, CASE TEMPERATURE (oC) 150 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 0.5 0.2 0.1 0.1 PDM 0.05 0.02 0.01 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) 100 101 FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE 102 10 PD = 75W 7.5V 1.5s 101 10s 100s 100 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 10-1 100 101 1ms 10ms 100ms DC 102 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 3 103 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) TJ = MAX RATED TC = 25oC 8.0V 10V 20V 8 VGS = 7.0V 6 VGS = 6.5V PULSE DURATION = 80s TJ = 25oC VGS = 6.0V 4 VGS = 5.5V VGS = 5.0V 2 VGS = 4.5V VGS = 4.0V 0 0 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 5. OUTPUT CHARACTERISTICS 50 BUZ60B 10 Unless Otherwise Specified (Continued) 6 PULSE DURATION = 80s VDS = 25V TJ = 25oC rDS(ON), DRAIN TO SOURCE ON RESISTANCE IDS(ON), DRAIN TO SOURCE CURRENT (A) Typical Performance Curves 5 0 0 5 VGS, GATE TO SOURCE VOLTAGE (V) FIGURE 6. TRANSFER CHARACTERISTICS VGS(TH), GATE THRESHOLD VOLTAGE (V) rDS(ON), DRAIN TO SOURCE ON RESISTANCE () PULSE DURATION = 80s ID = 2.5A VGS = 10V 3 2 1 -50 0 50 VGS = 5V 100 150 3 7V 7.5V 8V 9V 10V 20V 2 1 0 gfs, TRANSCONDUCTANCE (S) C, CAPACITANCE (nF) CISS VGS = 0, f = 1MHz CISS = CGS +CGD CRSS = CGD COSS = CDS + CGS COSS CRSS 10 20 30 VDS, DRAIN TO SOURCE VOLTAGE (V) 40 FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 4 4 6 ID, DRAIN CURRENT (A) 8 10 4 VDS = VGS, ID = 1mA 3 2 1 0 -50 5 0 2 0 50 100 150 FIGURE 9. GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 101 10-2 6.5V TJ, JUNCTION TEMPERATURE (oC) FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 10-1 6V 4 TJ, JUNCTION TEMPERATURE (oC) 100 5.5V FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 4 0 5 0 10 PULSE DURATION = 80s PULSE DURATION = 80s VDS = 25V TJ = 25oC 4 3 2 1 0 0 5 ID, DRAIN CURRENT (A) FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT 10 BUZ60B Typical Performance Curves 15 PULSE DURATION = 80s VGS, GATE TO SOURCE VOLTAGE (V) ISD, SOURCE TO DRAIN CURRENT (A) 102 Unless Otherwise Specified (Continued) 101 TJ = 150oC TJ = 25oC 100 10-1 0 0.5 1.0 1.5 VSD, SOURCE TO DRAIN VOLTAGE (V) ID = 8.3A 10 VDS = 80V VDS = 320V 5 0 2.0 0 10 30 20 40 50 Qg(TOT), TOTAL GATE CHARGE (nC) FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE Test Circuits and Waveforms tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + RG - VDD 10% 10% 0 DUT 90% VGS VGS 0 FIGURE 14. SWITCHING TIME TEST CIRCUIT 0.2F 50% PULSE WIDTH 10% FIGURE 15. RESISTIVE SWITCHING WAVEFORMS VDS (ISOLATED SUPPLY) CURRENT REGULATOR 12V BATTERY 50% VDD Qg(TOT) SAME TYPE AS DUT 50k Qgd 0.3F VGS Qgs D VDS DUT G 0 Ig(REF) S 0 IG CURRENT SAMPLING RESISTOR VDS ID CURRENT SAMPLING RESISTOR FIGURE 16. GATE CHARGE TEST CIRCUIT 5 Ig(REF) 0 FIGURE 17. GATE CHARGE WAVEFORMS