7-5
2N7000
N-Channel Enhancement-Mode
Vertical DMOS FET
Package Options
Note: See Package Outline section for dimensions.
Ordering Information
Order Number / Package
BVDSS /R
DS(ON) ID(ON)
BVDGS (max) (min) TO-92
60V 5.0Ω75mA 2N7000
Features
■■Free from secondary breakdown
■■Low power drive requirement
■■Ease of paralleling
■■Low CISS and fast switching speeds
■■Excellent thermal stability
■■Integral Source-Drain diode
■■High input impedance and high gain
■■Complementary N- and P-channel devices
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where high break-
down voltage, high input impedance, low input capacitance, and
fast switching speeds are desired.
Applications
■■Motor controls
■■Converters
■■Amplifiers
■■Switches
■■Power supply circuits
■■Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Absolute Maximum Ratings
Drain-to-Source Voltage BVDSS
Drain-to-Gate Voltage BVDGS
Gate-to-Source Voltage ± 30V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
* Distance of 1.6 mm from case for 10 seconds.
TO-92
S G D
7-6
Symbol Parameter Min Typ Max Unit Conditions
BVDSS Drain-to-Source Breakdown Voltage 60 V ID = 10µA, VGS = 0V
VGS(th) Gate Threshold Voltage 0.8 3.0 V VGS = VDS, ID = 1mA
IGSS Gate Body Leakage 10 nA VGS = ±15V, VDS = 0V
IDSS Zero Gate Voltage Drain Current 1 µAV
GS = 0V, VDS = 48V
1mAV
GS = 0V, VDS = 48V
TA = 125°C
ID(ON) ON-State Drain Current 75 mA VGS = 4.5V, VDS = 10V
RDS(ON) Static Drain-to-Source ON-State Resistance 5.3 VGS = 4.5V, ID = 75mA
RDS(ON) Static Drain-to-Source ON-State Resistance 5.0 ΩVGS = 10V, ID = 0.5A
GFS Forward Transconductance 100 m VDS = 10V, ID = 0.2A
CISS Input Capacitance 60
COSS Common Source Output Capacitance 25 pF
CRSS Reverse Transfer Capacitance 5
t(ON) Turn-ON Time 10 VDD = 15V, ID = 0.5A,
t(OFF) Turn-OFF Time 10 RGEN = 25Ω
VSD Diode Forward Voltage Drop 0.85 V ISD = 0.2A, VGS = 0V
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
2N7000
Thermal Characteristics
Electrical Characteristics (@ 25°C unless otherwise specified)
Ω
VGS = 0V, VDS = 25V
f = 1 MHz
ns
Switching Waveforms and Test Circuit
90%
10%
90% 90%
10%
10%
PULSE
GENERATOR
VDD
RL
OUTPUT
D.U.T.
t(ON)
td(ON)
t(OFF)
td(OFF) tF
tr
INPUT
INPUT
OUTPUT
10V
VDD
Rgen
0V
0V
Ω
Package ID (continuous)* ID (pulsed) Power Dissipation
θ
jc
θ
ja IDR*I
DRM
@ TC = 25°C°C/W °C/W
TO-92 200mA 500mA 1W 125 170 200mA 500mA
* ID (continuous) is limited by max rated Tj.
7-7
2N7000
Typical Performance Curves
Output Characteristics
2.5
2.0
1.5
1.0
0.5
0102030 5040
V
DS
(volts)
I
D
(amperes)
Saturation Characteristics
0246 108
V
DS
(volts)
I
D
(amperes)
Maximum Rated Safe Operating Area
0.1 100101.0
0.01
0.1
1.0
0.001
V
DS
(volts)
I
D
(amperes)
Thermal Response Characteristics
Thermal Resistance (normalized)
1.0
0.8
0.6
0.4
0.2
0.001 100.01 0.1 1
t
p
(seconds)
Transconductance vs. Drain Current
1.0
0.8
0.6
0.4
0.2
00 1.00.2 0.4 0.6 0.8
G
FS
(siemens)
I
D
(amperes)
Power Dissipation vs. Case Temperature
0 15010050
2.0
1.0
1257525
P
D
(watts)
TO-92
T
A
= -55°C
25°C
125°C
V
DS
V
DS
= 25V
TO-92 (pulsed)
8V
6V
4V
VGS =10V
0
0
0
8V
6V
4V
2.5
2.0
1.5
1.0
0.5
0
TO-92 (DC)
TC = 25°C
TO-92
P
D
= 1W
T
C
= 25°C
T
C
(°C)
V
GS
= 10V
7-8
Typical Performance Curves
2N7000
Gate Drive Dynamic Characteristics
Q
G
(nanocoulombs)
V
GS
(volts)
T
j
(°C)
V
GS(th)
(normalized)
R
DS(ON)
(normalized)
V
(th)
and R
DS
Variation with Temperature
On-Resistance vs. Drain Current
R
DS(ON)
(ohms)
BV
DSS
(normalized)
T
j
(°C)
Transfer Characteristics
V
GS
(volts)
I
D
(amperes)
I
D
(amperes)
BV
DSS
Variation with Temperature
0246810
2.5
2.0
1.5
1.0
0.5
-50 0 50 100 150
1.1
1.0
0.9
00 2.51.0
1.6
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0 0.2 0.4 0.6 0.8 1.0
-50 0 50 100 150
V
DS
= 10V
V
(th)
@ 1mA
V
GS
= 4.5V
V
GS
= 10V
0.5 1.5 2.0
1.0
2.0
3.0
5.0
4.0
T
A
= -55°C
25°C
125°C
0
40 pF
40V
80 pF
0
1.9
1.6
1.3
1.0
0.7
0.4
V
DS
= 25V
Capacitance vs. Drain-to-Source Voltage
100
C (picofarads)
V
DS
(volts)
0 10203040
75
50
25
0
f = 1MHz
C
ISS
C
OSS
C
RSS
R
DS
@ 10V, 1.0A
