© Semiconductor Components Industries, LLC, 1994
August, 2018 − Rev. 17 1Publication Order Number:
MMBZ15VDLT1/D
MMBZxxVxL,
SZMMBZxxVxL Series
Zener Diodes, 40 Watt Peak
Power
SOT−23 Dual Common Cathode Zeners
These dual monolithic silicon zener diodes are designed for
applications requiring protection capability. They a re intended f or use in
voltage and ESD sensitive equipment such as computers, printers,
business machines, communication systems, medical equipment and
other applications. T heir dual j unction c ommon c athode d esign p rotects
two separate lines using only one package. These devices are ideal for
situations where board space is at a premium.
Specification Features:
•SOT−23 Package Allows Either Two Separate Unidirectional
Configurations or a Single Bidirectional Configuration
•Standard Zener Breakdown Voltage Range − 15 V, 27 V, 39 V
•Peak Power − 40 W @ 1.0 ms (Bidirectional),
per Figure 5 Waveform
•ESD Rating of Class 3B (exceeding 16 kV) per the Human
Body Model
•ESD Rating of IEC61000−4−2 Level 4, ±30 kV Contact Discharge
•Low Leakage < 100 nA
•Flammability Rating: UL 94 V−O
•SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•These are Pb−Free Devices
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
SOT−23
CASE 318
STYLE 9
ANODE 1 3 CATHODE
ANODE 2
Device Package Shipping†
ORDERING INFORMATION
MARKING DIAGRAM
XXX = 15D, 27C or 39C
M = Date Code
G= Pb−Free Package
1
XXX MG
G
MMBZ15VDLT1G,
SZMMBZ15VDLT1G SOT−23
(Pb−Free) 3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer t o our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
MMBZxxVCLT1G,
SZMMBZxxVCLT1G SOT−23
(Pb−Free) 3,000 /
Tape & Reel
MMBZ15VDLT3G,
SZMMBZ15VDLT3G SOT−23
(Pb−Free) 10,000 /
Tape & Reel
MMBZxxVCLT3G,
SZMMBZxxVCLT3G SOT−23
(Pb−Free) 10,000 /
Tape & Reel
(Note: Microdot may be in either location)
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MMBZxxVxL, SZMMBZxxVxL Series
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2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Power Dissipation @ 1.0 ms (Note 1) @ TL ≤ 25°C Ppk 40 Watts
Total Power Dissipation on FR−5 Board (Note 2)
@ TA = 25°C
Derate above 25°C
°PD°225
1.8 mW
mW/°C
Thermal Resistance Junction−to−Ambient RqJA 556 °C/W
Total Power Dissipation on Alumina Substrate (Note 3)
@ TA = 25°C
Derate above 25°C
°PD°300
2.4
°
mW
mW/°C
Thermal Resistance Junction−to−Ambient RqJA 417 °C/W
Junction and Storage Temperature Range TJ, Tstg − 55 to +150 °C
Lead Solder Temperature − Maximum (10 Second Duration) TL260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be af fected.
1. Nonrepetitive current pulse per Figure 5 and derate above TA = 25°C per Figure 6.
2. FR−5 = 1.0 x 0.75 x 0.62 in.
3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
VCClamping Voltage @ IPP
VRWM Working Peak Reverse Voltage
IRMaximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
ITTest Current
VBR Maximum Temperature Coefficient of VBR
IFForward Current
VFForward Voltage @ IFUni−Directional Zener
IPP
IF
V
I
IR
IT
VRWM
VCVBR VF
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(VF = 0.9 V Max @ IF = 10 mA)
Device* Device
Marking
VRWM IR @ VRWM
Breakdown Voltage VC @ IPP (Note 5)
VBR
VBR (Note 4) (V) @ ITVCIPP
Volts nA Min Nom Max mA V A mV/5C
MMBZ15VDLT1G/T3G 15D 12.8 100 14.3 15 15.8 1.0 21.2 1.9 12
(VF = 1.1 V Max @ IF = 200 mA)
Device* Device
Marking
VRWM IR @ VRWM
Breakdown Voltage VC @ IPP (Note 5)
VBR
VBR (Note 4) (V) @ ITVCIPP
Volts nA Min Nom Max mA V A mV/5C
MMBZ27VCLT1G/T3G 27C 22 50 25.65 27 28.35 1.0 38 1.0 26
MMBZ39VCLT1G/T3G 39C 31.2 50 37.05 39 40.95 1.0 55 0.76 35.3
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. VBR measured at pulse test current IT at an ambient temperature of 25°C.
5. Surge current waveform per Figure 5 and derate per Figure 6
*Include SZ-prefix devices where applicable.
MMBZxxVxL, SZMMBZxxVxL Series
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3
-40 +85
17
BREAKDOWN VOLTAGE (VOLTS)
Figure 1. Typical Breakdown Voltage
versus Temperature
TEMPERATURE (°C)
+125
16
15
14
13
(VBR @ I T)
+25
MMBZ15VDL, SZMMBZ15VDL
-55 +85
29
BREAKDOWN VOLTAGE (VOLTS)
Figure 2. Typical Breakdown Voltage
versus Temperature
TEMPERATURE (°C)
+12
5
28
27
26
25
(VBR @ I T)
+25
MMBZ27VCL, SZMMBZ27VCL
TYPICAL CHARACTERISTICS
BIDIRECTIONAL
UNIDIRECTIONAL
BIDIRECTIONAL
1000
10
0.01
TEMPERATURE (°C)
IR(nA)
Figure 3. Typical Leakage Current
versus Temperature
100
1
0.1
-40 +85 +125+25 0 25 50 75 100 125 150 175
300
250
200
150
100
50
0
Figure 4. Steady State Power Derating Curve
PD, POWER DISSIPATION (mW)
TEMPERATURE (°C)
FR-5 BOARD
ALUMINA SUBSTRATE
VALUE (%)
100
50
001234
t, TIME (ms)
Figure 5. Pulse Waveform
tr ≤ 10 ms
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
50% OF IPP
.
HALF VALUE— IPP
2
PEAK VALUE—IPP
tP
100
90
80
70
60
50
40
30
20
10
00 25 50 75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)
Figure 6. Pulse Derating Curve
PEAK PULSE DERATING IN % OF PEAK POWER
OR CURRENT @ TA= 25 C
°
MMBZxxVxL, SZMMBZxxVxL Series
www.onsemi.com
4
TYPICAL APPLICATIONS
Figure 7. Single Wire CAN Network
ECU Connector
220 pF 10% GND
*
Single Wire
CAN Transceiver
CLoad Load
RLoad
9.09 kW 1%
Loss of
Ground
Protection
Circuit
VBatt
47 mHBus
*ESD Protection − MMBZ27VCL or equivalent. May be located
in each ECU (CLoad needs to be reduced accordingly) or at a
central point near the DLC.
Figure is the recommended solution for transient EMI/ESD protection. This circuit is shown in the
Society of Automotive Engineers February, 2000 J2411 “Single Wire CAN Network for Vehicle Applications” specification
(Figure 6 , page 1 1). Note: the dual common anode zener configuration shown above is electrically equivalent to a dual common
cathode zener configuration.
MMBZxxVxL, SZMMBZxxVxL Series
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5
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AS
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
AMIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE0.35 0.54 0.69 0.014 0.021 0.027
c0 −−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
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