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Features
IRAMX16UP60B
Series
16A, 600V
with Internal Shunt Resistor
Integrated Power Hybrid IC for
Appliance Motor Drive Applications.
Description
International Rectifier's IRAMX16UP60B is a 16A, 600V Integrated Power Hybrid IC with Internal Shunt
Resistor for Appliance Motor Drives applications such as air conditioning systems and compressor drivers as
well as for light industrial application. IR's technology offers an extremely compact, high performance AC
motor-driver in a single isolated package to simplify design.
This advanced HIC is a combination of IR's low VCE(on) Punch-Through IGBT technology and the industry
benchmark 3 phase high voltage, high speed driver in a fully isolated thermally enhanced package.
A built-in temperature monitor and over-current protection, along with the short-circuit rated IGBTs and
integrated under-voltage lockout function, deliver high level of protection and fail-safe operation. Using a
Single in line package (SiP2) with full transfer mold structure minimizes PCB space and resolve isolation
problems to heatsink.
PD-96-957 RevD
• Internal Shunt Resistor
• Integrated Gate Drivers and Bootstrap Diodes
• Temperature Monitor
• Low VCE(on) Non Punch Through IGBT Technology
• Undervoltage lockout for all channels
• Matched propagation delay for all channels
• Schmitt-triggered input logic
• Cross-conduction prevention logic
• Lower di/dt gate driver for better noise immunity
• Motor Power range 0.75~2.2kW / 85~253 Vac
• Isolation 2000VRMS min
• UL certification pending (UL number: E78996)
Absolute Maximu m R atings
Parameter Description Value Units
V
CES
/ V
RRM
IGBT/Diode Blocking Voltage 600
V
+
Positive Bus Input Voltage 450
I
O
@ T
C
=25°C RMS Phase Current (Note 1) 16
I
O
@ T
C
=100°C RMS Phase Current (Note 1) 8
I
O
Pulsed RMS Phase Current (Note 2) 30
F
PWM
PWM Carrier Frequency 20 kHz
P
D
Power dissipation per IGBT @ T
C
=25°C 31 W
V
ISO
Isolation Voltage (1min) 2000 V
RMS
T
J
(IGBT & Diodes) Operating Junction temperature Range -40 to +150
T
J
(Driver IC) Operating Junction temperature Range -40 to +150
T Mounting torque Range (M3 screw) 0.5 to 1.0 Nm
Note 1: Sinusoidal Modulation at V
+
=400V, T
J
=150°C, F
PWM
=16kHz, Modulation Depth=0.8, PF=0.6, See Figure 3.
Note 2: t
P
<100ms; T
C
=25°C; F
PWM
=16kHz. Limited by I
BUS-ITRIP
, see Table "Inverter Section Electrical Characteristics"
V
A
°C
IRAMX16UP60B
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Internal Electrical Schematic - IRAMX16UP60B
23 VS1
24 HO1
25 VB1
1 VCC
2 HIN1
3 HIN2
4 HIN3
5 LIN1
LIN2
6
LIN3
7
F
8
ITRIP
9
EN
10
RCIN
11
VSS
12
COM
13
22
VB2
21
HO2
20
VS2
19
VB3
18
HO3
17
VS3
V- (12)
VB1 (7)
U, VS1 (8)
VB2 (4)
V, VS2 (5)
VB3 (1)
W, VS3 (2)
VCC (14)
VSS (23)
Driver IC
LO1 16
LO3 14
LO2 15
ITRIP (22)
HIN1 (15)
HIN2 (16)
HIN3 (17)
LIN1 (18)
LIN2 (19)
LIN3 (20)
V (10)+
VTH (13)
FLT-EN(21)
THERMISTOR
IRAMX16UP60B
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Symbol Parameter Min Max Units
I
BDF
Bootstrap Diode Peak Forward
Current --- 4.5 A
P
BR Peak
Bootstrap Resistor Peak Power
(Single Pulse) --- 25.0 W
V
S1,2,3
High side floating supply offset
voltage V
B1,2,3
- 25 V
B1,2,3
+0.3 V
V
B1,2,3
High side floating supply voltage -0.3 600 V
V
CC
Low Side and logic fixed supply
voltage -0.3 20 V
V
IN,
V
EN,
V
ITRIP
Input voltage LIN, HIN, EN, I
Trip
-0.3
Lower of
(V
SS
+15V) or
V
CC
+0.3V
V
Abso l ute Maximu m R at in gs ( Co n t inue d)
All voltages are absolute referenced to COM/I
TRIP
.
Conditions
t
P
= 10ms,
T
J
= 150°C, T
C
=100°C
t
P
=100µs, T
C
=100°C
ESR / ERJ series
Inverte r Se c t io n E le c trical Ch aracteristics @ T J= 2 5 ° C
Symbol Parameter Min Typ Max Units
V
(BR)CES
Collector-to-Emitter Breakdown
Voltage 600 --- --- V
∆V
(BR)CES
/ ∆TTemperature Coeff. Of
Breakdown Voltage --- 0.3 --- V/°C
--- 1.55 1.85
--- 1.80 2.10
--- 5 80 V
IN
=5V, V
+
=600V
--- 165 --- V
IN
=5V, V
+
=600V, T
J
=150°C
--- 2.0 2.4
--- 1.4 1.9 I
C
=8A, T
J
=150°C
-- -- 1.25
--- --- 1.10
R
BR
Bootstrap Resistor Value --- 22 --- Ω
∆R
BR
/R
BR
Bootstrap Resistor Tolerance --- --- ±5 %
I
BUS_TRIP
Current Protection Threshold
(positive going) 21 --- 28 A
Conditions
I
CES
Zero Gate Voltage Collector
Current µA
V
CE(ON)
Collector-to-Emitter Saturation
Voltage V
V
IN
=5V, I
C
=1.0mA
(25°C - 150°C)
V
IN
=5V, I
C
=250µA
V
V
BDFM
Bootstrap Diode Forward Voltage
Drop V
V
FM
Diode Forward Voltage Drop
I
C
=8A, V
CC
=15V, T
J
=150°C
I
C
=8A, V
CC
=15V
T
J
=25°C
T
J
=25°C
I
C
=8A
I
F
=1A
I
F
=1A, T
J
=125°C
T
J
=-40°C to 125°C
See Fig. 2
IRAMX16UP60B
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Invert er Se c tio n Switc h in g Characteristics @ T
J
= 25°C
Symbol Parameter Min Typ Max Units
E
ON
Turn-On Switching Loss --- 315 435
E
OFF
Turn-Off Switching Loss --- 150 180
E
TOT
Total Switching Loss --- 465 615
E
REC
Diode Reverse Recovery energy --- 30 60
t
RR
Diode Reverse Recovery time --- 70 90 ns
E
ON
Turn-on Switching Loss --- 500 700
E
OFF
Turn-off Switching Loss --- 270 335
E
TOT
Total Switching Loss --- 770 1035
E
REC
Diode Reverse Recovery energy --- 60 100
t
RR
Diode Reverse Recovery time --- 120 150 ns
Q
G
Turn-On IGBT Gate Charge --- 56 84 nC
RBSOA Reverse Bias Safe Operating Area
SCSOA Short Circuit Safe Operating Area 10 --- --- µs
I
CSC
Short Circuit Collector Current --- 140 --- A
µJ
µJ
I
C
=15A, V
+
=400V, V
GE
=15V
T
J
=150°C, I
C
=8A, V
P
=600V
V
+
= 450V
V
CC
=+15V to 0V See CT3
T
J
=150°C, V
P
=600V,
V
+
= 360V,
V
CC
=+15V to 0V See CT2
T
J
=150°C, V
P
=600V, t
SC
<10µs
V
+
= 360V, V
GE
=15V
V
CC
=+15V to 0V See CT2
FULL SQUARE
Conditions
I
C
=8A, V
+
=400V
V
CC
=15V, L=2mH
Energy losses include "tail" and
diode reverse recovery
See CT1
I
C
=8A, V
+
=400V
V
CC
=15V, L=2mH, T
J
=150°C
Energy losses include "tail" and
diode reverse recovery
See CT1
Recommended Operating Conditions Driver Function
Symbol Definition Min Max Units
V
B1,2,3
High side floating supply voltage V
S
+12 V
S
+20
V
S1,2,3
High side floating supply offset voltage Note 4 450
V
CC
Low side and logic fixed supply voltage 12 20
V
ITRIP
I
TRIP
input voltage V
SS
V
SS
+5
V
IN
Logic input voltage LIN, HIN V
SS
V
SS
+4 V
V
EN
Logic input voltage EN V
SS
V
SS
+5 V
Note 3: For more details, see IR21363 data sheet
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommende conditions. All voltages are absolute referenced to COM/I
TRIP
. The V
S
offset is tested with all supplies biased
at 15V differential (Note 3)
V
V
Note 4: Logic operational for V
s
from COM-5V to COM+600V. Logic state held for V
s
from COM-5V to COM-V
BS
.
(please refer to DT97-3 for more details)
IRAMX16UP60B
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St at i c Elect r i c al C harac t e r i stic s Dr i ve r Fun ction
Symbol Definition Min Typ Max Units
V
INH
,
V
ENH
Logic "0" input voltage 3.0 --- --- V
V
INL
,
V
ENL
Logic "1" input voltage --- --- 0.8 V
V
CCUV+,
V
BSUV+
V
CC
and V
BS
supply undervoltage Positive going threshold 10.6 11.1 11.6 V
V
CCUV-,
V
BSUV-
V
CC
and V
BS
supply undervoltage Negative going threshold 10.4 10.9 11.4 V
V
CCUVH,
V
BSUVH
V
CC
and V
BS
supply undervoltage lock-out hysteresis --- 0.2 --- V
V
IN,Clamp
Input Clamp Voltage (HIN, LIN, I
TRIP
) I
IN
=10µA 4.9 5.2 5.5 V
I
QBS
Quiescent V
BS
supply current V
IN
=0V --- --- 165 µA
I
QCC
Quiescent V
CC
supply current V
IN
=0V --- --- 3.35 mA
I
LK
Offset Supply Leakage Current --- --- 60 µA
I
IN+,
I
EN+
Input bias current V
IN
=5V --- 200 300 µA
I
IN-,
I
EN-
Input bias current V
IN
=0V --- 100 220 µA
I
TRIP+
I
TRIP
bias current V
ITRIP
=5V --- 30 100 µA
I
TRIP-
I
TRIP
bias current V
ITRIP
=0V --- 0 1 µA
V(I
TRIP
)I
TRIP
threshold Voltage 440 490 540 mV
V(I
TRIP
, HYS) I
TRIP
Input Hysteresis --- 70 --- mV
R
ON
,
FLT
Fault
Output ON Resistance --- 50 100 ohm
V
BIAS
(V
CC
, V
BS1,2,3
)=15V, unless otherwise specified. The V
IN
and I
IN
parameters are referenced to COM/I
TRIP
and are
applicable to all six channels. (Note 3)
Dy namic Ele c t r i cal Ch ar acte r i st i cs
Symbol Parameter Min Typ Max Units Conditions
TON
Input to Output propagation turn-
on delay time (see fig.11) --- 590 --- ns
TOFF
Input to Output propagation turn-
off delay time (see fig. 11) --- 660 --- ns
TFLIN Input Filter time (HIN, LIN) 100 200 --- ns VIN=0 & VIN=5V
TBLT-Trip ITRIP Blancking Time 100 150 ns VIN=0 & VIN=5V
DTDead Time (VBS=VDD=15V) 220 290 360 ns VBS=VCC=15V
MT
Matchin
g
Propa
g
ation Delay Time
(On & Off) --- 40 75 ns VCC= VBS= 15V, external dead
time> 400ns
TITrip
ITrip to six switch to turn-off
propagation delay (see fig. 2) --- --- 1.75 µs VCC=VBS= 15V, IC=8A,
V+=400V
--- 7.7 --- TC = 25°C
--- 6.7 --- TC = 100°C
Post ITrip to six switch to turn-off
clear time (see fig. 2)
TFLT-CLR ms
Driver only timing unless otherwise specified.
VCC=VBS= 15V, IC=8A,
V+=400V
IRAMX16UP60B
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Input-Outpu t Logic Level Table
FLT- EN ITRIP HIN1,2,3 LIN1,2,3 U,V,W
1001
V+
10100
1011Off
11XXOff
0XXXOff
Ho
Lo
U,V,W
IC
Driver
V+
Hin1,2,3
Lin1,2,3
(15,16,17)
(18,19,20)
(8,5,2)
Th erm al and M echani cal Character i st i cs
Symbol Parameter Min Typ Max Units Conditions
R
th(J-C)
Thermal resistance, per IGBT --- 3.5 4.0
R
th(J-C)
Thermal resistance, per Diode --- 5.0 5.5
R
th(C-S)
Thermal resistance, C-S --- 0.1 ---
C
D
Creepage Distance 3.2 --- --- mm See outline Drawings
°C/W
Flat, greased surface. Heatsink
compound thermal conductivity
1W/mK
In ter nal N T C - T her m i st or Ch ar acte r i st i cs
Parameter Definition Min Typ Max Units Conditions
R
25
Resistance 97 100 103 kΩT
C
= 25°C
R
125
Resistance 2.25 2.52 2.80 kΩT
C
= 125°C
B B-constant (25-50°C) 4165 4250 4335 k R
2
= R
1
e
[B(1/T2 - 1/T1)]
Temperature Range -40 125 °C
Typ. Dissipation constant 1 mW/°C T
C
= 25°C
Internal Current Sensing Resistor - Shunt Characteristics
Symbol Parameter Min Typ Max Units Conditions
R
Shunt
Resistance 17.9 18.1 18.3 mΩT
C
= 25°C
T
Coeff
Temperature Coefficient 0 --- 200 ppm/°C
P
Shunt
Power Dissipation --- --- 3.0
W
-40°C< T
C
<100°C
T
Range
Temperature Range -40 --- 125 °C
IRAMX16UP60B
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LIN1,2,3
HIN1,2,3
tfltclr
50%
U,V,W
IBUS_trip
6µs 1µs
IBUS
Sequence of events:
1-2) Current begins to rise
2) Current reaches IBUS_Trip level
2-3) Current is higher than IBUS_Trip for at least 6µs. This value is the worst-case condition with very low
over-current. In case of high current (short circuit), the actual delay will be smaller.
3-4) Delay between driver identification of over-current condition and disabling of all outputs
4) Current starts decreasing, eventually reaching 0
5) Current goes below IBUS_trip, the driver starts its auto-reset sequence
6) Driver is automatically reset and normal operation can resume (over-current condition must be removed
by the time the drivers automatically resets itself)
3 421 5 6
Note 5: The shaded area indicates that both high-side and low-side switches are off and therefore the half-bridge output
voltage would be determined by the direction of current flow in the load.
Figure 2. ITrip Timing Waveform
IRAMX16UP60B
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Module Pin-Out Description
1
23
Pin Name Description
1V
B3
High Side Floating Supply Voltage 3
2W,V
S3
Output 3 - High Side Floating Supply Offset Voltage
3NAnone
4V
B2
High Side Floating Supply voltage 2
5V,V
S2
Output 2 - High Side Floating Supply Offset Voltage
6NAnone
7V
B1
High Side Floating Supply voltage 1
8U, V
S1
Output 1 - High Side Floating Supply Offset Voltage
9NAnone
10 V
+
Positive Bus Input Voltage
11 NA none
12 V
-
Negative Bus Input Voltage
13 V
TH
Temperature Feedback
14 V
CC
+15V Main Supply
15 H
IN1
Logic Input High Side Gate Driver - Phase 1
16 H
IN2
Logic Input High Side Gate Driver - Phase 2
17 H
IN3
Logic Input High Side Gate Driver - Phase 3
18 L
IN1
Logic Input Low Side Gate Driver - Phase 1
19 L
IN2
Logic Input Low Side Gate Driver - Phase 2
20 L
IN3
Logic Input Low Side Gate Driver - Phase 3
21 FAULT Fault Indicator
22 I
TRIP
Current Sense and Itrip Pin
23 V
SS
Negative Main Supply
IRAMX16UP60B
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Typical Application Connection IRAMX16UP60B
1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and
EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve perfor-
mance.
2. In order to provide good decoupling between VCC-VSS and VB1,2,3-VS1,2,3 terminals, the capacitors shown connected be-
tween these terminals should be located very close to the module pins. Additional high frequency capacitors, typically
0.1µF, are strongly recommended.
3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on
IR design tip DN 98-2a, application note AN-1044 or Figure 9. Bootstrap capacitor value must be selected to limit the
power dissipation of the internal resistor in series with the VCC. (see maximum ratings Table on page 3).
4. Current sense signal can be obtained from pin 20 and pin 23. Care should be taken to avoid having inverter current
flowing through pin 22 to mantain required current measurement accuracy
5. After approx. 8ms the FAULT is reset. (see Dynamic Characteristics Table on page 5).
6. PWM generator must be disabled within Fault duration to garantee shutdown of the system, overcurrent condition
must be cleared before resuming operation.
7. Fault/Enable pin must be pulled-up to +5V.
035-Z2L03
IRAMX16UP60B
123
HIN2
HIN3
LIN1
LIN2
LIN3
HIN1
3-Phase AC
MOTOR
BOOT-STRAP
CAPACITORS
U
V
W
Vcc (15 V)
ITRIP
VSS
CONTROLLER
V+
DC BUS
CAPACITORS
Temp
Monitor
Enable
10mF
0.1mF
2.2µF
Fault/Enable
1K +5V
12kohm
+5V +15V
V-
VTH
VB3
VB2
VB1
+5V
VS3
VS2
VS1
IRAMX16UP60B
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Figure 3. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency
V+=400V , TJ=150°C, Modulation Depth=0.8, PF=0.6
Figure 4. Maximum Sinusoidal Phase Current vs. Modulation Frequency
V+=400V, TJ=150°C, TC=100°C, Modulation Depth=0.8, PF=0.6
110100
0
2
4
6
8
10
TJ = 150°C
Sinusoidal Modulation
Maximum Output Phas e RMS Curr ent - A
Modula tion Fr equenc y - H z
FPWM = 20kHz
FPWM = 16kHz
FPWM = 12kHz
0 2 4 6 8 101214161820
0
2
4
6
8
10
12
14
TJ = 150°C
Sinusoidal Modulation
Maximum Output Phase RMS Current - A
PWM Frequency - kHz
TC = 100°C
TC = 110°C
TC = 120°C
IRAMX16UP60B
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Figure 5. Total Power Losses vs. PWM Switching Frequency, Sinusoidal modulation
V+=400V , TJ=150°C, Modulation Depth=0.8, PF=0.6
Figure 6. Total Power Losses vs. Output Phase Current, Sinusoidal modulation
VBUS=400V , TJ=150°C, Modulation Depth=0.8, PF=0.6
0 1 2 3 4 5 6 7 8 9 10 11 12
0
25
50
75
100
125
150
TJ = 150°C
Sinusoidal Modulation
Total Power Losses - W
Output Pha se Current - ARMS
FPWM = 12 kHz
FPWM = 16 kHz
FPWM = 20 kHz
0123456789101112
0
25
50
75
100
125
150
TJ = 150°C
Sinusoidal Modulation
Total Power Los ses - W
Output Phase Current - ARMS
FPWM = 12 kHz
FPWM = 16 kHz
FPWM = 20 kHz
IRAMX16UP60B
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Figure 7. Maximum Allowable Case temperature vs. Output RMS Current per Phase
Figure 8. Estimated Maximum IGBT Junction Temperature vs. Thermistor Temperature
02468101214
0
20
40
60
80
100
120
140
160
TJ = 150°C
Sinusoidal Modulation
Maximum A llowa ble Ca s e Te mpera ture -°C
Output Phase Current - ARMS
FPWM = 12 kHz
FPWM = 16 kHz
FPWM = 20 kHz
65 70 75 80 85 90 95 100
100
110
120
130
140
150
160
TJ avg. = 1.2447 x TTherm+ 30.77
IGBT J unctio n Te mp era ture - °C
Internal Th erm is tor Temp er a tu re E qu iv a l ent Rea d O u t - ° C
IRAMX16UP60B
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Figure 10. Recommended Bootstrap Capacitor Value vs. Switching Frequency
0 5 10 15 20
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
6.8µF
RBS DBS CBS
RG1
RG2
VS
HO
LO
COM
vB
VCC
HIN
LIN
+15V
VSS
V+
HIN
LIN
U,V,W
GND
VSS
3.3µF
4.7µF
10µF
Recommended Bootstrap Capacitor - µF
PWM Frequency - kHz
15µF
Figure 9. Thermistor Readout vs. Temperature (12kohm pull-up resistor, 5V) and
Nominal Thermistor Resistance values vs. Temperature Table.
-40-40 -30 -20-20 -10 00102020 30 4040 50 6060 70 8080 90 100100 110 120120 130
0.5
1.01.0
1.5
2.02.0
2.5
3.03.0
3.5
4.04.0
4.5
5.05.0
+5 V
VTherm
RTherm
REXT
Thermistor Pin Read-Out Voltage - V
Thermistor Temperature - °C
Min
Avg.
Max
T
THERM
R
THERM
T
THERM
R
THERM
T
THERM
R
THERM
°C Ω°C Ω°C Ω
-40 4397119 25 100000 90 7481
-35 3088599 30 79222 95 6337
-30 2197225 35 63167 100 5384
-25 1581881 40 50677 105 4594
-20 1151037 45 40904 110 3934
-15 846579 50 33195 115 3380
-10 628988 55 27091 120 2916
-5 471632 60 22224 125 2522
0 357012 65 18322 130 2190
5 272500 70 15184 135 1907
10 209710 75 12635 140 1665
15 162651 80 10566 145 1459
20 127080 85 8873 150 1282
IRAMX16UP60B
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Figure 11. Switching Parameter Definitions
Figure 11a. Input to Output Propagation
turn-on Delay Time
Figure 11b. Input to Output Propagation
turn-off Delay Time
Figure 11c. Diode Reverse Recovery
50%
HIN/LIN
VCE
IC
HIN/LIN
TOFF
tf
90% IC
10% IC
50%
VCE
VCE IC
HIN/LIN
TON
tr
50%
HIN/LIN 90% IC
10% IC
50%
VCE
VCE
IF
HIN/LIN
trr
Irr
IRAMX16UP60B
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Figure CT1. Switching Loss Circuit
Figure CT2. S.C.SOA Circuit
Figure CT3. R.B.SOA Circuit
Ho
Lo
U,V,W
IC
Driver
V+
Lin1,2,3
5V
Hin1,2,3
Ho
Lo
U,V,W
IC
Driver
V+
Lin1,2,3
Hin1,2,3
IN
10k
1k
5VZD
VCC
Io
Ho
Lo
U,V,W
IC
Driver
V+
Lin1,2,3
Hin1,2,3
IN
10k
1k
5VZD
VCC
Io
IN
IO
IN
IO
IN
IO
IRAMX16UP60B
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Package Outline IRAMX16UP60B
56
62
25.8
11.4
Ø3.4 TYP.
25.3
2 TYP.
22 PITCHES = 44
0.80
0.55
TYP.
123
46.2
50
5.5
2 TYP.
A
C
AB
Ø0.20
3
035-Z2L03
note 1
9
0.70
0.45 TYP.
INT.
11.4 REF
CONVEX ONLY
5.0 3.2
2.5
0.10 C
R0.6 TYP.
INT.
4.7
9.0 REF.
B
MIN.
IRAMX16UP60B
M
note 3
note 2
For mounting instruction see AN-1049
Notes:
Dimensions in mm
1- Marking for pin 1 identification
2- Product Part Number
3- Lot and Date code marking
4- Convex only 0.15mm typical
5- Tollerances ±0.5mm, unless otherwise stated
IRAMX16UP60B
www.irf.com 17
Data and Specifications are subject to change without notice
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07/05
Package Outline IRAMX16UP60B-2
Notes:
Dimensions in mm
1- Marking for pin 1 identification
2- Product Part Number
3- Lot and Date code marking
4- Convex only 0.15mm typical
5- Tollerances ±0.5mm, unless otherwise stated
56
62
25.8
11.4
Ø3.4 TYP.
25.3
2 TYP.
22 PITCHES = 44
0.80
0.55 TYP.
123
46.2
50
5.5
2 TYP.
A
C
B
AB
Ø0.20
3
035-Z2L03
513.9
11.4 REF.
0.70
0.45 TYP.
0.10
CONVEX ONLY
5 REF.
R0.6 TYP.
10° REF.
3.2
2.5
4.7
C
11.4 REF
MIN.
M
IRAMX16UP60B
note 3
note 2
note 1
For mounting instruction see AN-1049