FDC638P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance * -4.5 A, -20 V. RDS(ON) = 48 m @ V GS = -4.5 V RDS(ON) = 65 m @ V GS = -2.5 V These devices are well suited for battery power applications: load switching and power management, battery charging circuits, and DC/DC conversion. * High performance trench technology for extremely low RDS(ON) * Low gate charge (10 nC typical) * SuperSOT TM -6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick) S D D SuperSOT G TM -6 pin 1 D 6 2 5 3 4 D Absolute Maximum Ratings Symbol 1 TA=25oC unless otherwise noted Ratings Units V DSS Drain-Source Voltage Parameter -20 V V GSS Gate-Source Voltage 8 V ID Drain Current -4.5 A PD Power Dissipation for Single Operation - Continuous (Note 1a) - Pulsed TJ , TSTG -20 (Note 1a) 1.6 (Note 1b) 0.8 W -55 to +150 C (Note 1a) 78 C/W (Note 1) 30 C/W Operating and Storage Junction Temperature Range Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient RJ C Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .638 FDC638P 7'' 8mm 3000 units 2001 Fairchild Semiconductor Corporation FDC638P Rev F1 (W) FDC638P September 2001 Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS BV DSS TJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V GS = 0 V, ID = -250 A V DS = -16 V, V GS = 0 V -1 A IGSSF Gate-Body Leakage, Forward V GS = 8 V, V DS = 0 V 100 nA IGSSR Gate-Body Leakage, Reverse V GS = -8 V, V DS = 0 V -100 nA -1.5 V On Characteristics -20 ID = -250 A,Referenced to 25C V -14 mV/C (Note 2) V GS(th) V GS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance V DS = V GS , ID = -250 A ID = -250 A,Referenced to 25C ID(on) On-State Drain Current V GS = -4.5 V, V DS = -5 V gFS Forward Transconductance V DS = -10 V, ID = -4.5 A 15 S V DS = -10 V, f = 1.0 MHz V GS = 0 V, 1160 pF 195 pF 105 pF -0.4 -0.8 3 39 52 54 V GS = -4.5 V, ID = -4.5 A V GS = -2.5 V, ID = -3.8 A V GS = -4.5 V, ID = -4.5 TJ =125C mV/C 48 65 72 -20 m A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) tf Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (Note 2) V DD = -5 V, V GS = -4.5 V, 12 22 ns 9 18 ns Turn-Off Delay Time 33 53 ns Turn-Off Fall Time 12 22 ns 10 14 nC V DS = -10 V, V GS = -4.5 V ID = -1 A, RGEN = 6 ID = -4.5 A, 2.2 nC 1.5 nC Drain-Source Diode Characteristics and Maximum Ratings IS V SD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward V GS = 0 V, IS = -1.3 A Voltage -0.73 (Note 2) -1.3 A -1.2 V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 78C/W when mounted on a 1in2 pad of 2 oz copper b) 156C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDC638P Rev F (W) FDC638P Electrical Characteristics FDC638P Typical Characteristics 20 1.6 V GS = -4.5V -2.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) -3.0V 15 -2.0V 10 5 0 0 1 2 3 1.4 1.2 -3.0V -3.5V -4.0V 0.8 4 0 Figure 1. On-Region Characteristics. 5 10 -ID , DRAIN CURRENT (A) 15 20 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0.15 ID = -4.5A V GS = -4.5V RDS(ON), ON-RESISTANCE (OHM) ID = -2.2A 1.4 1.2 1 0.8 0.6 0.12 0.09 TA = 125o C 0.06 T A = 25o C 0.03 0 -50 -25 0 25 50 75 100 125 150 1 2 T J, JUNCTION TEMPERATURE ( oC) 3 4 5 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 15 100 T A = -55oC 25o C -I S, REVERSE DRAIN CURRENT (A) V DS = -5V 12 -I D, DRAIN CURRENT (A) -4.5V 1 -V DS , DRAIN TO SOURCE VOLTAGE (V) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -2.5V 125oC 9 6 3 0 0.5 1 1.5 2 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 2.5 V GS = 0V 10 1 TA = 125 oC 0.1 25oC 0.01 -55o C 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC638P Rev F (W) FDC638P Typical Characteristics 1500 V DS = -5V ID = -4.5A -10V 4 3 2 1 f = 1 MHz VGS = 0 V CISS 1200 -15V CAPACITANCE (pF) -V GS, GATE-SOURCE VOLTAGE (V) 5 900 600 C OSS 300 0 CRSS 0 3 6 9 12 0 0 Qg, GATE CHARGE (nC) 5 10 15 20 -V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 50 -ID, DRAIN CURRENT (A) RDS(ON) LIMIT P(pk), PEAK TRANSIENT POWER (W) 100 1ms 10ms 10 100ms 1s 1 10s DC V GS = -4.5V SINGLE PULSE RJA = 156o C/W 0.1 T A = 25o C 0.01 0.1 1 10 SINGLE PULSE RJA = 156C/W TA = 25C 40 30 20 10 0 0.001 100 0.01 0.1 -V DS , DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 10 100 t 1, TIME (sec) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 R JA(t) = r(t) + R JA o R JA = 156 C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 t2 0.01 T J - TA = P * RJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b Transient thermal response will change depending on the circuit board design. FDC638P Rev F (W) SuperSOTTM-6 Tape and Reel Data SSOT-6 Packaging Configuration: Figure 1.0 Packaging Description: Customize Label SSOT-6 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 3,000 units per 7" or 177cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 10,000 units per 13" or 330cm diameter reel. This and some other options are described in the Packaging Information table. Antistatic Cover Tape F63TNR Label These full reels are individually barcode labeled and placed inside a pizza box (illustrated in figure 1.0) made of recyclable corrugated brown paper with a Fairchild logo printing. One pizza box contains five reels maximum. And these pizza boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped. Embossed Carrier Tape 631 631 631 631 631 Pin 1 SSOT-6 Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Standard (no flow code) TNR D87Z 10,000 7" Dia 13" 193x183x80 355x333x40 Max qty per Box 15,000 30,000 Weight per unit(gm) 0.0158 0.0158 Weight per Reel (kg) 0.1440 0.4700 Box Dimension (mm) SSOT-6 Unit Orientation TNR 3,000 Barcode Label Note/Comments Barcode Label Barcode Label 355mm x 333mm x 40mm Intermediate container for 13" reel option Barcode Label sample 193mm x 183mm x 80mm Pizza Box for Standard Option SSOT-6 Tape Leader and Trailer Configuration: Figure 2.0 LOT: CBVK741B019 QTY: 3000 FSID: FDC633N SPEC: CBVK741B019 FDC633N 3000 D/C1: D9842AB QTY1: SPEC REV: D/C2: QTY2: CPN: FAIRCHILD SEMICONDUCTOR CORPORATION (F63T Carrier Tape Cover Tape Components Tr ailer Ta pe 300mm minimum or 75 empty pockets (c)2001 Fairchild Semiconductor Corporation Leader Tape 500mm minimum or 125 empty pockets May 2001, Rev. D SuperSOTTM-6 Tape and Reel Data, continued SSOT-6 Embossed Carrier Tape Configuration: Figure 3.0 P0 D0 T E1 F K0 Wc W E2 B0 Tc A0 D1 P1 User Direction of Feed Dimensions are in millimeter Pkg type A0 B0 SSOT-6 (8mm) 3.23 +/-0.10 3.18 +/-0.10 W 8.0 +/-0.3 D0 D1 E1 E2 1.55 +/-0.05 1.125 +/-0.125 1.75 +/-0.10 F 6.25 min 3.50 +/-0.05 P1 P0 4.0 +/-0.1 4.0 +/-0.1 K0 T 1.37 +/-0.10 0.255 +/-0.150 Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). Wc 0.06 +/-0.02 0.5mm maximum 20 deg maximum Typical component cavity center line B0 5.2 +/-0.3 Tc 0.5mm maximum 20 deg maximum component rotation Typical component center line Sketch A (Side or Front Sectional View) A0 Component Rotation Sketch C (Top View) Component lateral movement Sketch B (Top View) SSOT-6 Reel Configuration: Figure 4.0 Component Rotation W1 Measured at Hub Dim A Max Dim A max See detail AA Dim N 7" Diameter Option B Min Dim C See detail AA W3 13" Diameter Option Dim D min W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Tape Size Reel Option Dim A Dim B 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 2.165 55 0.331 +0.059/-0.000 8.4 +1.5/0 0.567 14.4 0.311 - 0.429 7.9 - 10.9 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 4.00 100 0.331 +0.059/-0.000 8.4 +1.5/0 0.567 14.4 0.311 - 0.429 7.9 - 10.9 8mm 7" Dia 7.00 177.8 8mm 13" Dia 13.00 330 1998 Fairchild Semiconductor Corporation Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL) July 1999, Rev. C SuperSOTTM-6 Package Dimensions SuperSOT-6 (FS PKG Code 31, 33) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0158 (c)2000 Fairchild Semiconductor International September 1998, Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4