GE SOLID STATE OL DEgpsa7soa1 oo1ssib & & Optoelectronic: Specifications eo T'41-&S Infrared Emitter CQX14, CQX15, CQX16, CQX17 Gallium Arsenide Infrared-Emitting Diode The GE Solid State CQX14-CQK15-CQX16-CQXI7 series are gallium arsenide, . light emitting diodes which cmit non-coherent, infrared energy with a peak wave CQX14, CQX16 length of 940 nanometers. They are ideally suited for use with silicon detectors and are mounted ina TO-18 style hermetically sealed package. The CQX14 and CQX16 havea lens which provides a narrow beam angle. The CQX15 and CQX17 have a flat window for a wide beam angle which is useful with external lensing. absolute maximum ratings: (25C unless otherwise specified) Voltage: Reverse Voltage. Vr 3 volts Currents: sve | aunt tax | Mie A ok | NOTES Forward Current Continuous Ip 100 mA a 285 647 ow | 021 | aor | 533 Forward Current (pw 1 ys, 200 Hz) Ip 10 A go | 209] 230 | Sar | 584 9 | 489 | sez | 457 | 477 Dissipations: sAgonO, 2 sau 2 Power Dissipation (Ta = 25C)* Pr 170 mW : wy O30 76 Power Dissipation (Tc = 25C)** Pr 13 W 1] mL ee] Be ie | Temperatures: | de PE dee 3 Junction Temperature Ty 65C to +150C Storage Temperature Tstg 65C to +150C en caxi7 Lead Soldering Time 10 seconds at 260C pane *Derate 1.36 mW/C above 25C ambient. es > **Derate 10.4 mW/C above 25C. case, . NON i aA by gp Lu HLF) electrical characteristics: (25C unless otherwise specified) MIN, TYP, MAX. UNITS sect] wml thax | NON Ma | notes a 2185 [ 393 Reverse Leakage Current os eh st ss = 1 qd Tt (Vr = 3Y) Ip 10 uA v a goNoM 2n4KOM. 2 Forward Voltage axonal. 12rwow | 2 (iy = 100mA) Ve 14 1.7 Vv yp my ee) gape . t | soo] 25.4 optical characteristics: (25C unless otherwise specified) * * 5 Total Power Output (note 1) oo) (Ip = 100mA) . ANODE) CATHODE COQX14-CQX15 Py 5.4 mW TO CASE) CQX16-CQX17 1.5 mW . 4. Measured from maximum diameter Peak Emission Wavelength. of device. (Ip = 100mA) 940 nm 2. Leads having max. diameter .021" (533mm) measured in gaging plane Spectral Shift with Temperature 28 - _ amc 084" + 001 .000 (137 + 025 . 000mm!) below the reference plane of Spectral Bandwidth 50% 60 nm "the device shall be within .007 : (.778mm) their true position relative Rise Time 0-90% of Output 1.0 us toa maximum width tab. Fall Time 100-10% of Output 1.0 us 3. From centerline tab. Note 1: Total power output, Po, is the fotal power radiated by the device into a solid angle of 2 7 steradians. 340G E SOLID STATE a O1 deff sa7soan 0019817 8 i CQX14-CQX17 Optoetectronic Specifications & oy wl si TYPICAL CHARACTERISTICS : T 4/ Ss. 5 l4 NORMALIZED POWER CUTPLT Py NORMALIZED POWER OUTPUT as NO ED IN [Ft lOO Mm: Taraere ' 04 HORMALIZED TO PS ipslooma Tas 25C a2] " -80 28 s 60 738 160 128 150 TF- FORWARD CURRENT-AMFERES . TarAMBIENT TEMPERATURE-*C 1. POWER OUTPUT VS. INPUT CURRENT 2. POWER OUTPUT VS. TEMPERATURE too Tantoore 2eec Ip7 FORWARD CURRENT ~AMPERES: Tp- FORWARD CURRENT ~MILLIAMPERES ' : VE~ FORWARD. VOLTAGE -VOLTS Vp- FORWARD VOLTAGE = VOLTS 3. FORWARD VOLTAGE VS. FORWARD CURRENT . 4, FORWARD VOLTAGE VS. FORWARD CURRENT bo too 0 / \ \ 80} 60: 40 RELATIVE OUTPUT PERCENT 8 <<] al RELATIVE OUTPUT - PERCENT T| | : / \ vA N .. 3 2 6 0 10 2080 6 40 2 oF 2 40 A-ANGULAR DISPLACEMENT FROM OPTICAL AXIS ~OEGREES F-ANGULAR DISPLACEMENT FROM OPTICAL AXIS - DEGREES 6. CQx14-CQx16 6. CQx15-CQX17 TYPICAL RADIATION PATTERN TYPICAL RADIATION PATTERN 341