N–Channel Enhancement–Mode

circuits at frequencies to 500 MHz. The high power, high gain and broadband

performance of these devices makes possible solid state transmitters for FM

broadcast or TV channel frequency bands.

Power Gain — 17 dB Typ

Efficiency — 55% Typ

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain–Source Voltage VDSS 125 Vdc

Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

OFF CHARACTERISTICS (1)

Drain–Source Breakdown Voltage

(VGS = 0, ID = 100 mA) V(BR)DSS 125 — — Vdc

(VDS = 50 V, VGS = 0) IDSS — — 2.5 mAdc

N–CHANNEL MOS

ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)

ON CHARACTERISTICS (1)

DYNAMIC CHARACTERISTICS (1)

(VDD = 50 Vdc, Pout = 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA,

 

 

 

FUNCTIONAL CHARACTERISTICS — MRF176GU (1) (Figure 2)

(VDD = 50 Vdc, Pout = 150 W, f = 400 MHz, IDQ = 2.0 x 100 mA,

   

     

      

 

                 

 

   

   

 

 

Figure 10. Output Power versus Input Power Figure 11. Output Power versus Input Power

Figure 12. Output Power versus Supply Voltage

   

 

NOTE: S–Parameter data represents measurements taken from one chip only.

Table 1. Common Source S–Parameters (VDS = 50 V, ID = 0.35 A)

0.011

MOSFET CAPACITANCES

The physical structure of a MOSFET results in capacitors

provided for general information about the device. They are

use them as such.

In addition to the typical IMD and power gain, data pre-

sented in Figure 3 may give the designer additional informa-

tion on the capabilities of this device. The graph represents

DRAIN CHARACTERISTICS

at high temperatures, because it contributes to the power

GATE CHARACTERISTICS

Gate Voltage Rating — Never exceed the gate voltage

ceeding the rated VGS can result in permanent damage to

Gate Termination — The gates of this device are essen-

or floating should be avoided. These conditions can result in

capacitor due to leakage currents or pickup.