TS4148 RXG
Taiwan Semiconductor
1 Version:O1803
150mA, 75V Switching Diode
FEATURES
Low power loss, high efficiency
Ideal for automated placement
High surge current capability
Moisture sensitivity level: level 1, per J-STD-020
Compliance to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
APPLICATIONS
Switching mode power supply (SMPS)
Adapters
Lighting application
On-board DC/DC converter
MECHANICAL DATA
Case: 1206(Ceramics)
Molding compound meets UL flammability classification
rating 94HB
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 1A whisker test
Polarity: Indicated by cathode band
Weight: 0.01g (approximately)
KEY PARAMETERS
PARAMETER VALUE UNIT
PD 500 mW
IF(AV) 150 mA
VRRM 75 V
IFSM 2 A
VF at IF=100mA 1.00 V
TJ Max. 150 °C
Package 1206 (Ceramics)
Configuration Single die
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Power dissipation PD 500 mW
Repetitive peak reverse voltage VRRM 75 V
Non-repetitive peak reverse voltage VRSM 100 V
Forward current I
F(AV)
150 mA
Repetitive peak forward current I
FRM
300 mA
Non-repetitive peak forward surge
current
tp = 1s square wave
IFSM
0.5
A
tp = 8.3ms single half sine
wave 2.0
Junction temperature range TJ -55 to +150 °C
Storage temperature range TSTG -55 to +150 °C
TS4148 RXG
Taiwan Semiconductor
2 Version:O1803
THERMAL PERFORMANCE
PARAMETER
SYMBOL
TYP.
UNIT
Junction-to-ambient thermal resistance RӨJA 375 °C/W
ELECTRICAL SPECIFICATIONS
(TA = 25°C unless otherwise noted)
PARAMETER CONDITIONS SYMBOL TYP. MAX. UNIT
Reverse breakdown voltage (2) IR=100μA, TJ=25°C VR 75 - V
Forward voltage per diode (1) IF=100mA, TJ=25°C VF - 1 V
Reverse recovery time IF=10mA, IR=10mA,
RL=100Ω trr - 4 ns
Reverse current @ rated VR per
diode (2)
VR=20V TJ=25°C
IR
- 25 nA
VR=75V TJ=25°C - 5 µA
Junction capacitance 1 MHz, VR=0V CJ - 4 pF
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
ORDERING INFORMATION
ORDERING CODE PACKAGE PACKING
TS4148 RXG
1206
5K / 7" Reel
TS4148 RAG 10K / 13" Reel
TS4148 RXG
Taiwan Semiconductor
3 Version:O1803
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig. 1 Typical Forward Characteristics
Fig. 2 Reverse Current VS. Reverse Voltage
Fig. 3 Admissible Power Dissipation Curve
Fig. 4 Typical Junction Capacitance
0.01
0.1
1
10
100
1000
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
TA=25oC
TA=100oC
0.01
0.10
1.00
10.00
100.00
0 20 40 60 80 100 120
TA=25oC
0
100
200
300
400
500
0 25 50 75 100 125 150
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0 2 4 6 8 10
Reverse Current (uA)
Instantaneous Forward Voltage (V)
Power Dissipation (mW)
Ambient Temperature (
o
C)
Junction Capacitance (pF)
Reverse Voltage (V)
Reverse Voltage (V)
Instantaneous Forward Current (mA)
TS4148 RXG
Taiwan Semiconductor
4 Version:O1803
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig. 5 Forward Resistance VS. Forward Current
1
10
100
1000
10000
0.01 0.1 1 10 100
Forward Current (mA)
Dynamic Forward Resistance (Ohm)
TS4148 RXG
Taiwan Semiconductor
5 Version:O1803
PACKAGE OUTLINE DIMENSION
1206
DIM. Unit (mm) Unit (inch)
Min Max Min Max
A 3.00 3.40 0.118 0.134
B 1.30 1.70 0.051 0.067
C 0.35 0.75 0.014 0.030
D 0.65 0.85 0.026 0.033
TS4148 RXG
Taiwan Semiconductor
6 Version:O1803
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
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