VS-1N1183, VS-1N3765, VS-1N1183A, VS-1N2128A Series www.vishay.com Vishay Semiconductors Power Silicon Rectifier Diodes, 35 A, 40 A, 60 A DESCRIPTION/FEATURES * Low leakage current series * Good surge current capability up to 1000 A * Can be supplied to meet stringent military, aerospace, and other high reliability requirements * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DO-203AB (DO-5) PRODUCT SUMMARY IF(AV) 35 A, 40 A, 60 A Package DO-203AB (DO-5) Circuit configuration Single diode MAJOR RATINGS AND CHARACTERISTICS PARAMETER IF(AV) IFSM I2t I2t VRRM TEST CONDITIONS TC 50 Hz 60 Hz 50 Hz 60 Hz Range TJ 1N1183 35 (1) 140 (1) 480 500 (1) 1140 1040 16 100 50 to 600 (1) 1N3765 35 (1) 140 (1) 380 400 (1) 730 670 10 300 700 to 1000 (1) 1N1183A 40 (1) 150 (1) 765 800 (1) 2900 2650 41 000 50 to 600 (1) 1N2128A 60 (1) 140 (1) 860 900 (1) 3700 3400 52 500 50 to 600 (1) UNITS A C -65 to 200 -65 to 200 -65 to 200 -65 to 200 C A A2s A2s V Note (1) JEDEC(R) registered values ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-1N1183 VS-1N1184 VS-1N1185 VS-1N1186 VS-1N1187 VS-1N1188 VS-1N1189 VS-1N1190 VS-1N3765 VS-1N3766 VS-1N3767 VS-1N3768 VS-1N1183A VS-1N1184A VS-1N1185A VS-1N1186A VS-1N1187A VS-1N1188A VS-1N1189A VS-1N1190A VS-1N2128A VS-1N2129A VS-1N2130A VS-1N2131A VS-1N2133A VS-1N2135A VS-1N2137A VS-1N2138A VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE (TJ = - 65 C TO 200 C (2)) V VRM, MAXIMUM DIRECT REVERSE VOLTAGE (TJ = - 65 C TO 200 C (2)) V 50 (1) 100 (1) 150 (1) 200 (1) 300 (1) 400 (1) 500 (1) 600 (1) 700 (1) 800 (1) 900 (1) 1000 (1) 50 (1) 100 (1) 150 (1) 200 (1) 300 (1) 400 (1) 500 (1) 600 (1) 700 (1) 800 (1) 900 (1) 1000 (1) Notes * Basic type number indicates cathode to case. For anode to case, add "R" to part number, e.g., 1N1188R, 1N3766R, 1N1186RA, 1N2135RA (1) JEDEC(R) registered values (2) For 1N1183 Series and 1N3765 Series T = - 65 C to 190 C C Revision: 28-Jan-14 Document Number: 93492 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-1N1183, VS-1N3765, VS-1N1183A, VS-1N2128A Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current at case temperature IF(AV) TEST CONDITIONS 1-phase operation, 180 sinusoidal conduction Half cycle 50 Hz sine wave or 6 ms rectangular pulse Maximum peak one cycle non-repetitive surge current IFSM Half cycle 60 Hz sine wave or 5 ms rectangular pulse Half cycle 50 Hz sine wave or 6 ms rectangular pulse Half cycle 60 Hz sine wave or 5 ms rectangular pulse t = 10 ms Maximum I2t for fusing t = 8.3 ms I2t t = 10 ms Maximum I2t for individual device fusing I2t Maximum for individual device fusing Maximum peak forward voltage at maximum forward current (IFM) Maximum average reverse current t = 8.3 ms I2t (2) VFM Following any rated load condition and with rated VRRM applied 1N1183 1N3765 1N1183A 1N2128A UNITS 35 (1) 35 (1) 40 (1) 60 (1) A 140 (1) 140 (1) 150 (1) 140 (1) C 480 380 765 860 500 (1) 400 (1) 800 (1) 900 (1) A Following any rated load condition and with 1/2 VRRM applied following surge = 0 With rated VRRM applied following surge, initial TJ = TJ maximum With VRRM = 0 following surge, initial TJ = TJ maximum t = 0.1 to 10 ms, VRRM = 0 following surge TJ = 25 C 570 455 910 1000 595 475 950 1050 1140 730 2900 3700 1040 670 2650 3400 A2s 1610 1030 4150 5250 1470 940 3750 4750 16 100 10 300 41 500 52 500 A2s 1.7 (1) 1.8 (1) 1.3 (1) 1.3 (1) V 110 110 A 126 188 (1) VRRM = 700 - 5.0 - - VRRM = 800 - 4.0 (1) - - - 3.0 (1) - - - 2.0 (1) - - 10 (1) - 2.5 (1) 10 (1) VRRM = 900 IR(AV) Maximum rated IF(AV) and TC VRRM = 1000 Maximum rated IF(AV), VRRM and TC mA Notes (1) JEDEC(R) registered values (2) I2t for time t = I2t x t x x Revision: 28-Jan-14 Document Number: 93492 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-1N1183, VS-1N3765, VS-1N1183A, VS-1N2128A Series www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating case temperature range TEST CONDITIONS 1N1183 1N3765 1N1183A 1N2128A UNITS TC - 65 to 190 (1) - 65 to 200 Maximum storage temperature range TStg - 65 to 175 (1) - 65 to 200 Maximum internal thermal resistance, junction to case RthJC DC operation Thermal resistance, case to sink RthCS Mounting surface, smooth, flat and greased C 1.00 (1) 1.1 (1) 0.65 (1) C/W 0.25 Not lubricated thread, tighting on nut (2) Maximum allowable mounting torque (+ 0 %, - 10 %) Lubricated thread, tighting on nut 3.4 (30) (2) 2.3 (20) Not lubricated thread, tighting on hexagon (3) 4.2 (37) Lubricated thread, tighting on hexagon (3) 3.2 (28) Approximate weight JEDEC(R) Case style N*m (lbf * in) 17 g 0.6 oz. DO-203AB (DO-5) 70 190 180 O 170 Conduction Period 160 150 DC 140 +60 C +120 C +180 C 130 120 110 Average Forward Power Loss Over Full Cycle (W) Maximum Allowable Case Temperature (C) Notes (1) JEDEC registered values(R) (2) Recommended for pass-through holes (3) Recommended for holed threaded heatsinks +60 C +120 C TJ = 190 C 60 50 +180 C 40 DC 30 20 O 10 Conduction Period 0 100 0 10 20 30 40 50 60 0 10 20 30 40 50 Average Forward Current Over Full Cycle (A) Average Forward Current Over Full Cycle (A) Fig. 1 - Maximum Allowable Case Temperature vs. Average Forward Current, 1N1183 and 1N3765 Series Fig. 2 - Typical Low Level Forward Power Loss vs. Average Forward Current (Sinusoidal Current Waveform), 1N1183 and 1N3765 Series Revision: 28-Jan-14 Document Number: 93492 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-1N1183, VS-1N3765, VS-1N1183A, VS-1N2128A Series www.vishay.com 100 105 TJ = 140 C 90 DC +180 C +120 C +60 C 104 10 Average Forward Current Over Full Cycle (A) Average Forward Current Over Full Cycle (A) Vishay Semiconductors 3 102 Conduction Period 102 10 103 +180 C Wave +120 C & 60 50 +180 C Wave Wave 40 30 +60 C 20 & Wave +Conduction Period Maximum Allowable CaseTemperature (C) Fig. 6 - Average Forward Current vs. Maximum Allowable Case Temperature, 1N1183A Series 100 Average Forward Power Loss Over Full Cycle (W) 103 TJ = 190 C Typical 102 101 TJ = 25 C +180 C Wave +180 C Wave 90 80 +120 C 70 +60 C & & DC Wave Wave 60 50 40 TJ = 200 C 30 20 +Conduction Period 10 0 1 0 1 2 3 4 5 0 6 10 20 30 40 50 60 70 IF - Instantaneous Forward Voltage (V) Average Forward Current Over Full Cycle (A) Fig. 4 - Typical Forward Voltage vs. Forward Current, 1N1183 and 1N3765 Series Fig. 7 - Maximum Low Level Forward Power Loss vs. Average Forward Current, 1N1183A Series 1.0 104 At any rated load condition and with rated VRRM applied following surge Series Per Unit Base-A 1N1183 500 1N3765 400 0.9 0.8 0.7 0.6 50 Hz 60 Hz 0.5 0.4 0.3 1 2 4 6 8 10 20 40 60 Number of Equal Amplitude Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current vs. Number of Current Pulses, 1N1183 and 1N3765 Series Revision: 28-Jan-14 Average Forward Power Loss Over Full Cycle (W) IF - Instantaneous Forward Current (A) DC 0 110 120 130 140 150 160 170 180 190 200 104 Average Forward Power Loss Over Full Cycle (W) Fig. 3 - Typical High Level Forward Power Loss vs. Average Forward Current (Sinusoidal Current Waveform), 1N1183 and 1N3765 Series Peak Half Sine Wave Forward Current (Per Unit) 70 10 O 10 80 103 +180 C Wave +180 C Wave +120 C & +60 C & DC Wave Wave 102 TJ = 200 C +Conduction Period 101 10 102 103 Average Forward Current Over Full Cycle (A) Fig. 8 - Maximum High Level Forward Power Loss vs. Average Forward Current, 1N1183A Series Document Number: 93492 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-1N1183, VS-1N3765, VS-1N1183A, VS-1N2128A Series Vishay Semiconductors 104 103 102 TJ = 25 C 10 TJ = 200 C 1 10-1 0 0.5 1 1.5 2 2.5 3 3.5 Instantaneous Forward Voltage (V) Fig. 9 - Maximum Forward Voltage vs. Forward Current, 1N1183A Series Maximum Allowable Case Temperature (C) Instantaneous Forward Current (A) www.vishay.com 180 Wave Wave Wave Wave 160 140 DC 120 100 +Conduction Period 80 60 0 10 20 30 40 50 60 70 80 90 100 Average Forward Current Over Full Cycle (A) 70 At any rated load condition and with rated VRRM applied following surge Series Per Unit Base-A 1N1183A 800 0.9 0.8 0.7 0.6 60 Hz 0.5 50 Hz 0.4 Average Forward Power Loss Over Full Cycle (W) Maximum Peak Half Sine Wave Forward Current (Per Unit) +60 C & +120 C & +180 C +180 C Fig. 12 - Maximum Allowable Case Temperature vs. Average Forward Current, 1N2128A Series 1.0 60 TJ = 140 C 50 +60 C & +120 C & +180 C +180 C 40 30 Wave Wave Wave Wave +Conduction Period 20 DC 10 0 0.3 1 2 4 6 8 10 20 0 40 60 Number of Equal Amplitude Current Pulses (N) Fig. 10 - Maximum Non-Repetitive Surge Current vs. Number of Current Pulses, 1N1183A Series 0.9 0.8 0.7 0.6 60 Hz 0.5 0.4 50 Hz 20 103 +60 C & +90 C & +180 C +180 C 1 2 4 6 8 10 20 40 60 Number of Equal Amplitude Current Pulses (N) Fig. 11 - Maximum Non-Repetitive Surge Current vs. Number of Current Pulses, 1N2128A Series Revision: 28-Jan-14 40 50 105 Wave Wave Wave Wave TJ = 140 C 102 +Conduction Period 104 DC DC +180 C +180 C +120 C & +60 C & 10 0.3 30 Fig. 13 - Maximum Low Level Forward Power Loss vs. Average Forward Current, 1N2128A Series Average Forward Power Loss Over Full Cycle (W) At any rated load condition and with rated VRRM applied following surge Series Per Unit Base-A 1N2128A 900 10 Average Forward Current Over Full Cycle (A) 1.0 Maximum Peak Half Sine Wave Forward Current (Per Unit) 200 10 102 103 Wave Wave Wave Wave 104 103 Average Forward Current Over Full Cycle (A) Fig. 14 - Maximum High Level Forward Power Loss vs. Average Forward Current, 1N2128A Series Document Number: 93492 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-1N1183, VS-1N3765, VS-1N1183A, VS-1N2128A Series Instantaneous Forward Current (A) www.vishay.com Vishay Semiconductors 104 103 102 TJ = 140 C 101 TTJJ == 25 C C 1.0 0 1 2 3 4 5 6 7 Instantaneous Forward Voltage (V) Fig. 15 - Maximum Forward Voltage vs. Forward Current, 1N2128A Series LINKS TO RELATED DOCUMENTS Dimensions Revision: 28-Jan-14 www.vishay.com/doc?95360 Document Number: 93492 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors DO-203AB (DO-5) for 1N1183, 1N3765, 1N1183A, 1N2128A, 1N3208 Series DIMENSIONS in millimeters (inches) O 14.6 (0.57) 6.1 (0.24) 7.0 (0.28) O 4.10 (0.16) O 3.80 (0.15) 1.03 (0.04) MAX. 4 (0.16) MIN. 25.4 (1.0) MAX. 10.8 (0.43) 11.4 (0.45) 10.7 (0.42) 11.5 (0.45) 1/4" 28UNF-2A for metric devices: M6 x 1 1.0 (0.04) MAX. Document Number: 95360 Revision: 29-Sep-08 17.40 (0.68) MIN. Across flats For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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